UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Improving the performance of phase-change memory by grain refinement

Journal of applied physics, 2020-08, Vol.128 (7)

2020

Volltextzugriff (PDF)

Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge2Sb2Te5 and Its Influence on Crystallization Behavior

Journal of physical chemistry. C, 2019-05, Vol.123 (21), p.13377-13384

2019

Volltextzugriff (PDF)

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

ACS applied materials & interfaces, 2020-05, Vol.12 (20), p.23051-23059

2020

Volltextzugriff (PDF)

Enhancing the Performance of Phase Change Memory for Embedded Applications

Physica status solidi. PSS-RRL. Rapid research letters, 2019-04, Vol.13 (4), p.n/a

2019

Volltextzugriff (PDF)

Understanding the early cycling evolution behaviors for phase change memory application

Journal of applied physics, 2014-11, Vol.116 (20)

2014

Volltextzugriff (PDF)

An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

IEEE electron device letters, 2012-09, Vol.33 (9), p.1270-1272

2012

Volltextzugriff (PDF)

Analysis of Influencing Factors on Multilevel Storage Performance in Phase-Change Random Access Memory

Electronics (Basel), 2024-09, Vol.13 (19), p.3802

2024

Volltextzugriff (PDF)

Reliability Modelling and Prediction Method for Phase Change Memory Using Optimal Pulse Conditions

Shanghai jiao tong da xue xue bao, 2020-02, Vol.25 (1), p.1-9

2020

Volltextzugriff (PDF)

A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology

Nano-micro letters, 2015-04, Vol.7 (2), p.172-176

2015

Volltextzugriff (PDF)

Temperature model for Ge2Sb2Te5 phase change memory in electrical memory device

Solid-state electronics, 2011-02, Vol.56 (1), p.13-17

2011

Volltextzugriff (PDF)

Reduction of Reset Current in Phase Change Memory by Pre-Programming

ECS journal of solid state science and technology, 2016-01, Vol.5 (2), p.Q13-Q16

2016

Volltextzugriff (PDF)

Endurance characteristics of phase change memory cells

Journal of semiconductors, 2016-05, Vol.37 (5), p.65-68

霍如如蔡道林陈邦明陈一峰王玉婵王月青魏宏阳王青夏洋洋高丹宋志棠

2016

Volltextzugriff (PDF)

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale, 2021-06, Vol.13 (23), p.1455-1461

2021

Volltextzugriff (PDF)

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Materials research bulletin, 2022-05, Vol.149, p.111731, Article 111731

2022

Volltextzugriff (PDF)

The electrical, optical properties of CdTe polycrystalline thin films deposited under Ar-O2 mixture atmosphere by close-spaced sublimation

Thin solid films, 2005-11, Vol.491 (1-2), p.104-109

2005

Volltextzugriff (PDF)

A low jitter PLL clock used for phase change memory

Journal of semiconductors, 2013-02, Vol.34 (2), p.124-128

2013

Volltextzugriff (PDF)

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale, 2021-06, Vol.13 (23), p.168-169

2021

Volltextzugriff (PDF)

An SPICE model for phase-change memory simulations

Journal of semiconductors, 2011-09, Vol.32 (9), p.70-73

李喜宋志棠蔡道林陈小刚陈后鹏

2011

Volltextzugriff (PDF)

Tuning the Crystallization Mechanism by Composition Vacancy in Phase Change Materials

ACS applied materials & interfaces, 2024-03, Vol.16 (12), p.15023-15031

2024

Volltextzugriff (PDF)

A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput

Procedia engineering, 2011, Vol.16, p.198-203

2011

Volltextzugriff (PDF)

Investigation on the Scaling Performances of Carbon‐Doped Ge2Sb2Te5 Thin Films for Phase Change Random Access Memory in a 40 nm Process

Physica status solidi. A, Applications and materials science, 2019-11, Vol.216 (22), p.n/a

2019

Volltextzugriff (PDF)

Investigation on the Scaling Performances of Carbon‐Doped Ge 2 Sb 2 Te 5 Thin Films for Phase Change Random Access Memory in a 40 nm Process

Physica status solidi. A, Applications and materials science, 2019-11, Vol.216 (22)

2019

Volltextzugriff (PDF)

Effect of Acidic Hydrogen Peroxide and Lysine Slurry on Ovonic Threshold Switch Film in Chemical Mechanical Polishing

ECS journal of solid state science and technology, 2022-08, Vol.11 (8), p.84004

2022

Volltextzugriff (PDF)

Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge 2 Sb 2 Te 5 and Its Influence on Crystallization Behavior

Journal of physical chemistry. C, 2019-05, Vol.123 (21), p.13377-13384

2019

Volltextzugriff (PDF)

Sb-rich CuSbTe material: A candidate for high-speed and high-density phase change memory application

Materials science in semiconductor processing, 2019-11, Vol.103, p.104625, Article 104625

2019

Volltextzugriff (PDF)

1 – 25 von 94

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(74)
Mit Volltextzugriff
(83)

Publikationsform

Sprache

Englisch
(91)
Chinesisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(64)
Technology
(42)
Physical Sciences
(29)
Physics
(27)
Engineering
(25)
Materials Science
(25)
Physics, Applied
(20)
Materials Science, Multidisciplinary
(19)
Life Sciences & Biomedicine
(12)
Physics, Condensed Matter
(12)
Phase Change Memory
(10)
Engineering, Electrical & Electronic
(9)
Cell Biology
(8)
Humans
(8)
Science & Technology - Other Topics
(7)
Mechanics
(6)
Cell Death
(5)
Engineering, Mechanical
(5)
Nanoscience & Nanotechnology
(5)
Oncology
(5)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Improving the performance of phase-change memory by grain refinement

Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge2Sb2Te5 and Its Influence on Crystallization Behavior

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

Enhancing the Performance of Phase Change Memory for Embedded Applications

Understanding the early cycling evolution behaviors for phase change memory application

An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

Analysis of Influencing Factors on Multilevel Storage Performance in Phase-Change Random Access Memory

Reliability Modelling and Prediction Method for Phase Change Memory Using Optimal Pulse Conditions

A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology

Temperature model for Ge2Sb2Te5 phase change memory in electrical memory device

Reduction of Reset Current in Phase Change Memory by Pre-Programming

Endurance characteristics of phase change memory cells

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

The electrical, optical properties of CdTe polycrystalline thin films deposited under Ar-O2 mixture atmosphere by close-spaced sublimation

A low jitter PLL clock used for phase change memory

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

An SPICE model for phase-change memory simulations

Tuning the Crystallization Mechanism by Composition Vacancy in Phase Change Materials

A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput

Investigation on the Scaling Performances of Carbon‐Doped Ge2Sb2Te5 Thin Films for Phase Change Random Access Memory in a 40 nm Process

Investigation on the Scaling Performances of Carbon‐Doped Ge 2 Sb 2 Te 5 Thin Films for Phase Change Random Access Memory in a 40 nm Process

Effect of Acidic Hydrogen Peroxide and Lysine Slurry on Ovonic Threshold Switch Film in Chemical Mechanical Polishing

Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge 2 Sb 2 Te 5 and Its Influence on Crystallization Behavior

Sb-rich CuSbTe material: A candidate for high-speed and high-density phase change memory application

Suchergebnisse filtern