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Phase transitions in Ge-Sb phase change materials

Journal of applied physics, 2009-03, Vol.105 (6), p.064918-064918-8

2009

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Prediction of recrystallization times in electroplated copper thin films

Thin solid films, 2016-09, Vol.615, p.107-115

2016

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Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers

Advanced materials (Weinheim), 2020-12, Vol.32 (49), p.e2004573-n/a

2020

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Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

IEEE electron device letters, 2013-06, Vol.34 (6), p.723-725

2013

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Threshold voltage control in NiSi-gated MOSFETs through SIIS

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.39-46

2005

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Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Proceedings of the National Academy of Sciences - PNAS, 2009-07, Vol.106 (27), p.10907-10911

2009

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Thin film deposition research and its impact on microelectronics scaling

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-07, Vol.38 (4)

2020

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A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors

Applied physics letters, 2002-06, Vol.80 (25), p.4858-4860

2002

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Tantalum as a diffusion barrier between copper and silicon : failure mechanism and effect of nitrogen additions

Journal of applied physics, 1992-06, Vol.71 (11), p.5433-5444

1992

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Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

IEEE electron device letters, 2021-06, Vol.42 (6), p.828-831

2021

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Micro‐Photovoltaics: Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers (Adv. Mater. 49/2020)

Advanced materials (Weinheim), 2020-12, Vol.32 (49), p.n/a

2020

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Physical and electrical analysis of RuxYy alloys for gate electrode applications

Applied physics letters, 2005-01, Vol.86 (5), p.53502

2005

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3-D Die Stacking With 55 μm Pitch Interconnections on Advanced Ground-Rule Laminate for Artificial Intelligence System

IEEE transactions on components, packaging, and manufacturing technology (2011), 2021-05, Vol.11 (5), p.875-878

2021

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Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements

Journal of applied physics, 2013-06, Vol.113 (21)

2013

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Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS

IEEE electron device letters, 2016-02, Vol.37 (2), p.150-153

2016

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Column Interconnects: A Path Forward for Embedded Cooling of High Power 3D Chip Stacks

2018 IEEE 68th Electronic Components and Technology Conference (ECTC), 2018, p.97-102

2018

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Alpha-particle-induced upsets in advanced CMOS circuits and technology

IBM journal of research and development, 2008-05, Vol.52 (3), p.225-232

2008

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Prediction of recrystallization times in electroplated copper thin films

Thin solid films, 2016-09, Vol.615 (C)

2016

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Ultra-Compact Computing at the Edge Involving Unobtrusively Small Sub-millimeter Heterogeneous Integration Packaging

2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 2024, p.1416-1423

2024

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Single-event-upset and alpha-particle emission rate measurement techniques

IBM journal of research and development, 2008-05, Vol.52 (3), p.265-273

2008

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Erratum: “A method for measuring barrier heights, metal work functions and fixed charge densities in metal/ SiO 2 /Si capacitors”[ Appl. Phys. Lett. 80, 4858 (2002)]

Applied physics letters, 2005-08, Vol.87 (5), p.059901-059901-1

2005

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Erratum: “A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors”[Appl. Phys. Lett. 80, 4858 (2002)]

Applied physics letters, 2005-08, Vol.87 (5)

2005

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Giant magnetoresistance of dilute Cu(Co) granular films

Journal of applied physics, 1994-05, Vol.75 (10), p.6909-6911

1994

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Humidity Penetration Impact on Integrated Circuit Performance and Reliability

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.5.4.1-5.4.4

2019

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Physical and electrical analysis of Ru x Y y alloys for gate electrode applications

Applied physics letters, 2005-01, Vol.86 (5), p.053502-053502-3

2005

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Phase transitions in Ge-Sb phase change materials

Prediction of recrystallization times in electroplated copper thin films

Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Threshold voltage control in NiSi-gated MOSFETs through SIIS

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Thin film deposition research and its impact on microelectronics scaling

A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors

Tantalum as a diffusion barrier between copper and silicon : failure mechanism and effect of nitrogen additions

Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

Micro‐Photovoltaics: Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers (Adv. Mater. 49/2020)

Physical and electrical analysis of RuxYy alloys for gate electrode applications

3-D Die Stacking With 55 μm Pitch Interconnections on Advanced Ground-Rule Laminate for Artificial Intelligence System

Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements

Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS

Column Interconnects: A Path Forward for Embedded Cooling of High Power 3D Chip Stacks

Alpha-particle-induced upsets in advanced CMOS circuits and technology

Prediction of recrystallization times in electroplated copper thin films

Ultra-Compact Computing at the Edge Involving Unobtrusively Small Sub-millimeter Heterogeneous Integration Packaging

Single-event-upset and alpha-particle emission rate measurement techniques

Erratum: “A method for measuring barrier heights, metal work functions and fixed charge densities in metal/ SiO 2 /Si capacitors”[ Appl. Phys. Lett. 80, 4858 (2002)]

Erratum: “A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors”[Appl. Phys. Lett. 80, 4858 (2002)]

Giant magnetoresistance of dilute Cu(Co) granular films

Humidity Penetration Impact on Integrated Circuit Performance and Reliability

Physical and electrical analysis of Ru x Y y alloys for gate electrode applications

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