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Investigating the electromigration limits of Cu nano-interconnects using a novel hybrid physics-based model

Journal of applied physics, 2019-08, Vol.126 (5)

2019

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1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Airgaps in nano-interconnects: Mechanics and impact on electromigration

Journal of applied physics, 2016-09, Vol.120 (9)

2016

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Low-frequency noise and thermal equilibrium properties of vacancies

Applied physics letters, 2020-05, Vol.116 (19)

2020

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Study of the enhanced electromigration performance of Cu(Mn) by low-frequency noise measurements and atom probe tomography

Applied physics letters, 2017-08, Vol.111 (8)

2017

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Expected Failures in 3-D Technology and Related Failure Analysis Challenges

IEEE transactions on components, packaging, and manufacturing technology (2011), 2018-05, Vol.8 (5), p.711-718

2018

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Low-frequency noise and defects in copper and ruthenium resistors

Applied physics letters, 2019-05, Vol.114 (20)

2019

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Impact of carbon-doping on time dependent dielectric breakdown of SiO2-based films

Applied physics letters, 2015-02, Vol.106 (7)

2015

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Degradation of Cu6Sn5 intermetallic compound by pore formation in solid–liquid interdiffusion Cu/Sn microbump interconnects

Microelectronic engineering, 2014-04, Vol.117, p.26-34

2014

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Low-Temperature Oxidation Kinetics of Polymer-Embedded ECD Copper

JOM (1989), 2023-06, Vol.75 (6), p.1874-1879

2023

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Direct observation of the 1 / E dependence of time dependent dielectric breakdown in the presence of copper

Applied physics letters, 2011-01, Vol.98 (3), p.032107-032107-3

2011

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Modelling stress evolution and voiding in advanced copper nano-interconnects under thermal gradients

Microelectronics and reliability, 2020-08, Vol.111, p.113769, Article 113769

2020

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Cu passivation for integration of gap-filling ultralow-k dielectrics

Applied physics letters, 2016-12, Vol.109 (23)

2016

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Main reliability challenges with copper TSV's

2012 IEEE International Integrated Reliability Workshop Final Report, 2012, p.205-205

Croes, Kristof

2012

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Effect of test structure on electromigration characteristics in three-dimensional through silicon via stacked devices

Japanese Journal of Applied Physics, 2015-05, Vol.54 (5S), p.5

2015

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Characterization and Reliability Study of an Al-Doped HfO₂-Based High-Density 2.5-D MIMCAP

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3845-3851

2024

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Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Thin solid films, 2011-10, Vol.520 (1), p.662-666

2011

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Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO 2 dielectric for 2.5D MIMCAPs

Solid-state electronics, 2024-03, Vol.213, p.108864, Article 108864

2024

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On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processing

Microelectronic engineering, 2013-06, Vol.106, p.155-159

2013

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Hot-carrier induced degradation of Ge/STI interfaces in Ge-on-Si junction devices

Solid-state electronics, 2024-04, Vol.214, p.108867, Article 108867

2024

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Experimental study of time-dependent dielectric degradation by means of random telegraph noise spectroscopy

Solid-state electronics, 2024-04, Vol.214, p.108877, Article 108877

2024

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Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO2 dielectric for 2.5D MIMCAPs

Solid-state electronics, 2024-03, Vol.213, Article 108864

2024

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Electromigration Activation Energies in Alternative Metal Interconnects

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5278-5283

2019

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RC Benefits of Advanced Metallization Options

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2339-2345

2019

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Variability-Aware Predictive Modeling of Line-to-Line Dielectric Reliability

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1737-1744

2020

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Investigating the electromigration limits of Cu nano-interconnects using a novel hybrid physics-based model

1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

Airgaps in nano-interconnects: Mechanics and impact on electromigration

Low-frequency noise and thermal equilibrium properties of vacancies

Study of the enhanced electromigration performance of Cu(Mn) by low-frequency noise measurements and atom probe tomography

Expected Failures in 3-D Technology and Related Failure Analysis Challenges

Low-frequency noise and defects in copper and ruthenium resistors

Impact of carbon-doping on time dependent dielectric breakdown of SiO2-based films

Degradation of Cu6Sn5 intermetallic compound by pore formation in solid–liquid interdiffusion Cu/Sn microbump interconnects

Low-Temperature Oxidation Kinetics of Polymer-Embedded ECD Copper

Direct observation of the 1 / E dependence of time dependent dielectric breakdown in the presence of copper

Modelling stress evolution and voiding in advanced copper nano-interconnects under thermal gradients

Cu passivation for integration of gap-filling ultralow-k dielectrics

Main reliability challenges with copper TSV's

Effect of test structure on electromigration characteristics in three-dimensional through silicon via stacked devices

Characterization and Reliability Study of an Al-Doped HfO₂-Based High-Density 2.5-D MIMCAP

Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO 2 dielectric for 2.5D MIMCAPs

On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processing

Hot-carrier induced degradation of Ge/STI interfaces in Ge-on-Si junction devices

Experimental study of time-dependent dielectric degradation by means of random telegraph noise spectroscopy

Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO2 dielectric for 2.5D MIMCAPs

Electromigration Activation Energies in Alternative Metal Interconnects

RC Benefits of Advanced Metallization Options

Variability-Aware Predictive Modeling of Line-to-Line Dielectric Reliability

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