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Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping

Journal of applied physics, 2015-10, Vol.118 (13)

2015

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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Applied physics letters, 2004-03, Vol.84 (12), p.2055-2057

2004

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Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Mechanisms of B deactivation control by F co-implantation

Applied physics letters, 2005-03, Vol.86 (10), p.101905-101905-3

2005

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Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T118-T119

2015

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Extended defects in shallow implants

Applied physics. A, Materials science & processing, 2003-05, Vol.76 (7), p.1025-1033

2003

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Materials Technology Co-Optimization of Self-Aligned Gate Contact for Advanced CMOS Technology Nodes

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

Applied physics letters, 2005-03, Vol.86 (10), p.101913-101913-3

2005

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Formation energies and relative stability of perfect and faulted dislocation loops in silicon

Journal of applied physics, 2000-06, Vol.87 (12), p.8420-8428

2000

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Benefits of cryo-implantation for 28 nm NMOS advanced junction formation

Semiconductor science and technology, 2012-04, Vol.27 (4), p.45003

2012

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Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC Applications

IEEE electron device letters, 2012-10, Vol.33 (10), p.1444-1446

2012

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Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2155-2163

2007

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Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing

IEEE electron device letters, 2011-04, Vol.32 (4), p.548-550

2011

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Vacancy-engineering implants for high boron activation in silicon on insulator

Applied physics letters, 2006-02, Vol.88 (8)

2006

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Understanding of Carbon/Fluorine Co-implant Effect on Boron-Doped Junction Formed during Soak Annealing

Journal of the Electrochemical Society, 2008, Vol.155 (2), p.H69

2008

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The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.43-48

2008

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A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T30-T31

2015

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Ion beam induced defects in crystalline silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216 (1-4), p.46-56

2004

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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

Applied physics letters, 2003-09, Vol.83 (10), p.1953-1955

2003

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Modelling of the chemical-pump effect and C clustering

Semiconductor science and technology, 2004-12, Vol.19 (12), p.1339-1342

2004

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Kinetic study of group IV nanoparticles ion beam synthesized in SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-05, Vol.178 (1-4), p.17-24

2001

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Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.237 (1-2), p.107-112

2005

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Differential Hall profiling of ultra-shallow junctions in Si and SOI

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.305-309

2005

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Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216, p.281-285

2004

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Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs

Mechanisms of B deactivation control by F co-implantation

Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices

Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET

Extended defects in shallow implants

Materials Technology Co-Optimization of Self-Aligned Gate Contact for Advanced CMOS Technology Nodes

Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

Formation energies and relative stability of perfect and faulted dislocation loops in silicon

Benefits of cryo-implantation for 28 nm NMOS advanced junction formation

Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC Applications

Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing

Vacancy-engineering implants for high boron activation in silicon on insulator

Understanding of Carbon/Fluorine Co-implant Effect on Boron-Doped Junction Formed during Soak Annealing

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

Ion beam induced defects in crystalline silicon

Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

Modelling of the chemical-pump effect and C clustering

Kinetic study of group IV nanoparticles ion beam synthesized in SiO2

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

Differential Hall profiling of ultra-shallow junctions in Si and SOI

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

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