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Carbonization and transition layer effects on 3C-SiC film residual stress

Journal of crystal growth, 2017-09, Vol.473, p.11-19

2017

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Coupled Monte Carlo-Poisson method for the simulation of particle-particle effects in dielectrophoretic devices

Applied physics letters, 2012-03, Vol.100 (13), p.134104-134104-5

2012

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Microstructural evolution of SiOx films and its effect on the luminescence of Si nanoclusters

Journal of applied physics, 2008-11, Vol.104 (9)

2008

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Room-temperature electroluminescence from Er-doped crystalline Si

Applied physics letters, 1994-04, Vol.64 (17), p.2235-2237

1994

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High efficiency and fast modulation of Er-doped light emitting Si diodes

Applied physics letters, 1996-09, Vol.69 (14), p.2077-2079

1996

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Evolution from point to extended defects in ion implanted silicon

Journal of applied physics, 1997-07, Vol.82 (1), p.120-125

1997

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Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon

Applied physics letters, 2001-01, Vol.78 (3), p.291-293

2001

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Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si

Applied physics letters, 2000-01, Vol.76 (2), p.173-175

2000

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Electrical signatures and thermal stability of interstitial clusters in ion implanted Si

Journal of applied physics, 1998-11, Vol.84 (9), p.4749-4756

1998

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The erbium-impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon

Journal of applied physics, 1995-09, Vol.78 (6), p.3874-3882

1995

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Design, fabrication, and testing of an integrated Si-based light modulator

Journal of lightwave technology, 2003-01, Vol.21 (1), p.228-235

2003

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The effects of oxygen and defects on the deep-level properties of Er in crystalline Si

Journal of applied physics, 1995-09, Vol.78 (6), p.3867-3873

1995

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Role of Extended Vacancy-Vacancy Interaction on the Ripening of Voids in Silicon

Physical review letters, 1999-02, Vol.82 (8), p.1720-1723

1999

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Adding semantics to gene expression profiles: new tools for drug discovery

Current medicinal chemistry, 2005-01, Vol.12 (10), p.1149

2005

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Quantitative electron energy loss spectroscopy of si nanoclusters embedded in SiOx

Microelectronic engineering, 2007-03, Vol.84 (3), p.486-489

2007

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Early genomics of learning and memory: a review

Genes, brain and behavior, 2006-04, Vol.5 (3), p.209-221

2006

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Experimental evidences of carrier distribution and behavior in frequency in a BMFET Modulator

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2374-2378

2005

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Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 μm

Journal of lightwave technology, 2002-05, Vol.20 (5), p.862-867

2002

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Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si

Applied physics letters, 1997-03, Vol.70 (13), p.1712-1714

1997

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Electrical and optical characterization of Er-implanted Si : the role of impurities and defects

Journal of applied physics, 1993-10, Vol.74 (8), p.4936-4942

1993

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Depth profiles of vacancy- and interstitial-type defects in MeV implanted Si

Journal of applied physics, 1997-02, Vol.81 (4), p.1639-1644

1997

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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

Materials science forum, 2020-07, Vol.1004, p.472-476

2020

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High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Materials science forum, 2019-07, Vol.963, p.91-96

2019

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Trap-limited migration of Si self-interstitials at room temperature

Physical review letters, 1996-02, Vol.76 (9), p.1493-1496

1996

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Accelerated Monte Carlo algorithms for defect diffusion and clustering

Computational materials science, 2000, Vol.17 (1), p.21-33

2000

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Carbonization and transition layer effects on 3C-SiC film residual stress

Coupled Monte Carlo-Poisson method for the simulation of particle-particle effects in dielectrophoretic devices

Microstructural evolution of SiOx films and its effect on the luminescence of Si nanoclusters

Room-temperature electroluminescence from Er-doped crystalline Si

High efficiency and fast modulation of Er-doped light emitting Si diodes

Evolution from point to extended defects in ion implanted silicon

Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon

Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si

Electrical signatures and thermal stability of interstitial clusters in ion implanted Si

The erbium-impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon

Design, fabrication, and testing of an integrated Si-based light modulator

The effects of oxygen and defects on the deep-level properties of Er in crystalline Si

Role of Extended Vacancy-Vacancy Interaction on the Ripening of Voids in Silicon

Adding semantics to gene expression profiles: new tools for drug discovery

Quantitative electron energy loss spectroscopy of si nanoclusters embedded in SiOx

Early genomics of learning and memory: a review

Experimental evidences of carrier distribution and behavior in frequency in a BMFET Modulator

Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 μm

Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si

Electrical and optical characterization of Er-implanted Si : the role of impurities and defects

Depth profiles of vacancy- and interstitial-type defects in MeV implanted Si

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Trap-limited migration of Si self-interstitials at room temperature

Accelerated Monte Carlo algorithms for defect diffusion and clustering

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