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A synchrotron-radiation-based variable angle ellipsometer for the visible to vacuum ultraviolet spectral range

Review of scientific instruments, 2014-05, Vol.85 (5)

2014

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Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

Journal of applied physics, 2009-10, Vol.106 (7), p.076104-076104-3

2009

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Substrate influence on the optical and structural properties of pulsed laser deposited BiFeO3 epitaxial films

Journal of applied physics, 2010-06, Vol.107 (12)

2010

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Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes

Journal of applied physics, 2011-07, Vol.110 (1), p.013520-013520-8

2011

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Effect of U on the Electronic Properties of Neodymium Gallate (NdGaO3): Theoretical and Experimental Studies

The journal of physical chemistry. B, 2009-11, Vol.113 (46), p.15237-15242

2009

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Ultraviolet vacuum ultraviolet optical functions for SrTiO3 and NdGaO3 crystals determined by spectroscopic ellipsometry

Journal of applied physics, 2013-07, Vol.114 (4)

2013

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Reflectance difference spectroscopy of water on Cu(110)

Surface science, 2014-09, Vol.627, p.16-22

2014

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Dielectric function and optical properties of quaternary AlInGaN alloys

Journal of applied physics, 2011-07, Vol.110 (1), p.013102-013102-9

2011

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Valence-band splitting and optical anisotropy of AlN

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1679-1682

2010

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Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys

Physica status solidi. A, Applications and materials science, 2006-01, Vol.203 (1), p.42-49

2006

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Ellipsometric study of near band gap optical properties of SrxBa1−xNb2O6 crystals

Optical materials, 2013-03, Vol.35 (5), p.887-892

2013

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Detection of Yb impurities in the VUV spectral range of NdGaO3 crystals

Optics communications, 2010-10, Vol.283 (20), p.3998-4003

2010

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Specific features of Yb3+ ions in electronic band energy structure and optical functions of RbNd(WO4)2 crystals: Synchrotron ellipsometry measurements and DFT simulations

Journal of alloys and compounds, 2013-11, Vol.577, p.237-246

2013

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Ellipsometry from infrared to vacuum ultraviolet: Structural properties of thin anisotropic guanine films on silicon

Physica Status Solidi (b), 2005-11, Vol.242 (13), p.2681-2687

2005

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Electronic excitations in B12As2 and their temperature dependence by vacuum ultraviolet ellipsometry

Journal of physics. Condensed matter, 2010-10, Vol.22 (39), p.395801-395801

2010

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Dielectric properties of (NH4)2SO4 crystals in the range of electronic excitations

Journal of synchrotron radiation, 2009-03, Vol.16 (2), p.260-263

2009

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Dielectric functions of DNA base films from near-infrared to ultra-violet

Physica Status Solidi (b), 2005-12, Vol.242 (15), p.3047-3052

2005

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Dielectric function and critical points of the band structure for AlGaN alloys

Physica Status Solidi (b), 2005-11, Vol.242 (13), p.2610-2616

2005

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Characterization of damage structure in ion implanted SiC using high photon energy synchrotron ellipsometry

Thin solid films, 2011-02, Vol.519 (9), p.2791-2794

2011

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Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN

Journal of crystal growth, 2006-03, Vol.288 (2), p.273-277

2006

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Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy

Physica status solidi. B. Basic research, 2010-08, Vol.247 (8), p.2033-2039

2010

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Dielectric function of wurtzite GaN and AlN thin films

Solid state communications, 1999-09, Vol.112 (3), p.129-133

1999

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Band structure and UV optical spectra of TGS crystals in the range of 4–10 eV

Physica. B, Condensed matter, 2006-03, Vol.373 (2), p.328-333

2006

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Electronic Properties of KDP and DKDP Crystals: Ab-Initio Calculations and Spectral Ellipsometry Experiment

Ferroelectrics, 2011-01, Vol.417 (1), p.20-24

2011

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Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry

Journal of applied physics, 2003-11, Vol.94 (10), p.6997-6999

2003

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A synchrotron-radiation-based variable angle ellipsometer for the visible to vacuum ultraviolet spectral range

Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

Substrate influence on the optical and structural properties of pulsed laser deposited BiFeO3 epitaxial films

Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes

Effect of U on the Electronic Properties of Neodymium Gallate (NdGaO3): Theoretical and Experimental Studies

Ultraviolet vacuum ultraviolet optical functions for SrTiO3 and NdGaO3 crystals determined by spectroscopic ellipsometry

Reflectance difference spectroscopy of water on Cu(110)

Dielectric function and optical properties of quaternary AlInGaN alloys

Valence-band splitting and optical anisotropy of AlN

Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys

Ellipsometric study of near band gap optical properties of SrxBa1−xNb2O6 crystals

Detection of Yb impurities in the VUV spectral range of NdGaO3 crystals

Specific features of Yb3+ ions in electronic band energy structure and optical functions of RbNd(WO4)2 crystals: Synchrotron ellipsometry measurements and DFT simulations

Ellipsometry from infrared to vacuum ultraviolet: Structural properties of thin anisotropic guanine films on silicon

Electronic excitations in B12As2 and their temperature dependence by vacuum ultraviolet ellipsometry

Dielectric properties of (NH4)2SO4 crystals in the range of electronic excitations

Dielectric functions of DNA base films from near-infrared to ultra-violet

Dielectric function and critical points of the band structure for AlGaN alloys

Characterization of damage structure in ion implanted SiC using high photon energy synchrotron ellipsometry

Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN

Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy

Dielectric function of wurtzite GaN and AlN thin films

Band structure and UV optical spectra of TGS crystals in the range of 4–10 eV

Electronic Properties of KDP and DKDP Crystals: Ab-Initio Calculations and Spectral Ellipsometry Experiment

Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry

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