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Strain and ferroelectricity in wurtzite ScxAl1−xN materials

Applied physics letters, 2021-10, Vol.119 (17)

2021

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Identifying alternative ferroelectric materials beyond Hf(Zr)O2

Applied physics letters, 2020-12, Vol.117 (26)

2020

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Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Journal of applied physics, 2021-10, Vol.130 (16)

2021

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Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

Applied physics letters, 2015-07, Vol.107 (1)

2015

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Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia

Applied physics letters, 2021-03, Vol.118 (9)

2021

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First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

Journal of applied physics, 2016-06, Vol.119 (22)

2016

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Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory

ACS applied materials & interfaces, 2017-03, Vol.9 (12), p.10820-10824

2017

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Chalcogenide Ovonic Threshold Switching Selector

Nano-micro letters, 2024-12, Vol.16 (1), p.81-81, Article 81

2024

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High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

IEEE electron device letters, 2014-01, Vol.35 (1), p.63-65

2014

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Microcanonical RT-TDDFT simulations of realistically extended devices

The Journal of chemical physics, 2018-09, Vol.149 (12), p.124701-124701

2018

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In silico screening for As/Se-free ovonic threshold switching materials

npj computational materials, 2023-06, Vol.9 (1), p.96-8, Article 96

2023

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Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Advanced electronic materials, 2023-04, Vol.9 (4), p.n/a

2023

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Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

IEEE electron device letters, 2014-02, Vol.35 (2), p.199-201

2014

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Postcycling LRS Retention Analysis in HfO2/Hf RRAM 1T1R Device

IEEE electron device letters, 2013-05, Vol.34 (5), p.626-628

2013

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Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications

IEEE electron device letters, 2014-07, Vol.35 (7), p.753-755

2014

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Structural and Electronic Properties of the TTF/ZnO(10–10) Interface: Insights From Modeling

The journal of physical chemistry letters, 2012-01, Vol.3 (1), p.58-63

2012

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Endurance/Retention Trade-off on \hbox/\hbox Cap 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1114-1121

2013

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Electrical Demonstration of Sn-S-Based OTS Materials From Theoretical Design for Sustainable Innovation

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5339-5344

2024

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Determination of Ultimate Leakage Through Rutile \hbox and Tetragonal \hbox From Ab Initio Complex Band Calculations

IEEE electron device letters, 2013-03, Vol.34 (3), p.402-404

2013

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Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor

Solid-state electronics, 2024-02, Vol.212, p.108834, Article 108834

2024

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Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1114-1121

2013

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HfOx as RRAM material – First principles insights on the working principles

Microelectronic engineering, 2014-05, Vol.120, p.13-18

2014

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Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories

IEEE electron device letters, 2015-08, Vol.36 (8), p.769-771

2015

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Effect of the Metal Environment on the Ferromagnetic Interaction in the Co−NC−W Pairs of Octacyanotungstate(V)−Cobalt(II) Three-Dimensional Networks

Inorganic chemistry, 2007-04, Vol.46 (7), p.2682-2690

2007

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Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2276-2281

2023

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Strain and ferroelectricity in wurtzite ScxAl1−xN materials

Identifying alternative ferroelectric materials beyond Hf(Zr)O2

Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory

Chalcogenide Ovonic Threshold Switching Selector

High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

Microcanonical RT-TDDFT simulations of realistically extended devices

In silico screening for As/Se-free ovonic threshold switching materials

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

Postcycling LRS Retention Analysis in HfO2/Hf RRAM 1T1R Device

Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications

Structural and Electronic Properties of the TTF/ZnO(10–10) Interface: Insights From Modeling

Endurance/Retention Trade-off on \hbox/\hbox Cap 1T1R Bipolar RRAM

Electrical Demonstration of Sn-S-Based OTS Materials From Theoretical Design for Sustainable Innovation

Determination of Ultimate Leakage Through Rutile \hbox and Tetragonal \hbox From Ab Initio Complex Band Calculations

Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor

Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM

HfOx as RRAM material – First principles insights on the working principles

Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories

Effect of the Metal Environment on the Ferromagnetic Interaction in the Co−NC−W Pairs of Octacyanotungstate(V)−Cobalt(II) Three-Dimensional Networks

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

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