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The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

Journal of applied physics, 1992-11, Vol.72 (10), p.4918-4924

1992

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Self-propagating explosive reactions in Al/Ni multilayer thin films

Applied physics letters, 1990-09, Vol.57 (12), p.1262-1264

1990

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Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

Applied physics letters, 1995-12, Vol.67 (25), p.3729-3731

1995

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Nucleation-limited phase selection during reactions in nickel/amorphous-silicon multilayer thin films

Journal of applied physics, 1990-02, Vol.67 (3), p.1325-1333

1990

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Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration

Journal of applied physics, 1993, Vol.73 (1), p.300-308

1993

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Kinetic analysis of C49-TiSi2 and C54-TiSi2 formation at rapid thermal annealing rates

Journal of applied physics, 1992-11, Vol.72 (10), p.4978-4980

1992

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In situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines

Applied physics letters, 1995-04, Vol.66 (14), p.1732-1734

1995

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Nucleation and growth during reactions in multilayer Al/Ni films: The early stage of Al3Ni formation

Journal of applied physics, 1991-02, Vol.69 (4), p.2211-2218

1991

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Intermetallic formation in copper/magnesium thin films—kinetics, nucleation and growth, and effect of interfacial oxygen

Journal of applied physics, 1994-11, Vol.76 (9), p.5161-5170

1994

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Crystallization of amorphous Co-Si alloys

Journal of applied physics, 1992-10, Vol.72 (8), p.3423-3430

1992

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The C49 to C54-TiSi2 transformation in self-aligned silicide applications

Journal of applied physics, 1993-04, Vol.73 (7), p.3566-3568

1993

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A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines

Journal of applied physics, 1995-12, Vol.78 (12), p.7040-7044

1995

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Temperature dependence of the Al-fill processes for submicron-via structures

Thin solid films, 1998-05, Vol.320 (1), p.63-66

1998

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Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond ( invited)

Microelectronic engineering, 2000, Vol.50 (1), p.265-270

2000

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Experimental evidence for nucleation during thin-film reactions

Applied physics letters, 1989-08, Vol.55 (9), p.852-854

1989

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Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer

Journal of materials research, 1997-02, Vol.12 (2), p.304-307

1997

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Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines

Applied physics letters, 1998-01, Vol.72 (3), p.326-328

1998

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Explosive silicidation in nickel/amorphous-silicon multilayer thin films

Journal of applied physics, 1990-03, Vol.67 (6), p.2894-2898

1990

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The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines

Journal of applied physics, 2000-11, Vol.88 (9), p.5093-5099

2000

Volltextzugriff (PDF)

Reaction kinetics of nickel/silicon multilayer films

Applied physics letters, 1988-03, Vol.52 (10), p.795-797

1988

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Nucleation and growth during reactions in multilayer Al/Ni films : the early stage of Al3 Ni formation

Journal of applied physics, 1991-02, Vol.69 (4), p.2211-2218

1991

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Crystallographic texture of C54 titanium disilicide as a function of deep submicron structure geometry

Journal of electronic materials, 1997-09, Vol.26 (9), p.1090-1095

1997

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Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions

Journal of materials research, 1990-03, Vol.5 (3), p.593-600

1990

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Nucleation of an intermetallic at thin-film interfaces: VSi2 contrasted with Al3Ni

Journal of materials research, 1992-06, Vol.7 (6), p.1350-1355

1992

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Low temperature formation of C54–TiSi2 using titanium alloys

Applied physics letters, 1997-12, Vol.71 (24), p.3531-3533

1997

Volltextzugriff (PDF)

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The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

Self-propagating explosive reactions in Al/Ni multilayer thin films

Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

Nucleation-limited phase selection during reactions in nickel/amorphous-silicon multilayer thin films

Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration

Kinetic analysis of C49-TiSi2 and C54-TiSi2 formation at rapid thermal annealing rates

In situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines

Nucleation and growth during reactions in multilayer Al/Ni films: The early stage of Al3Ni formation

Intermetallic formation in copper/magnesium thin films—kinetics, nucleation and growth, and effect of interfacial oxygen

Crystallization of amorphous Co-Si alloys

The C49 to C54-TiSi2 transformation in self-aligned silicide applications

A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines

Temperature dependence of the Al-fill processes for submicron-via structures

Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond ( invited)

Experimental evidence for nucleation during thin-film reactions

Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer

Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines

Explosive silicidation in nickel/amorphous-silicon multilayer thin films

The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines

Reaction kinetics of nickel/silicon multilayer films

Nucleation and growth during reactions in multilayer Al/Ni films : the early stage of Al3 Ni formation

Crystallographic texture of C54 titanium disilicide as a function of deep submicron structure geometry

Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions

Nucleation of an intermetallic at thin-film interfaces: VSi2 contrasted with Al3Ni

Low temperature formation of C54–TiSi2 using titanium alloys

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