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CORD: contention resolution by delay lines

IEEE journal on selected areas in communications, 1996-06, Vol.14 (5), p.1014-1029

1996

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Method of improving light coupling efficiency between optical fibers and silicon waveguides

IEEE photonics technology letters, 2005-09, Vol.17 (9), p.1881-1883

2005

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Improved activation of Mg super(+) and As super(+) dual implants in GaAs by capless rapid thermal annealing

Applied physics letters, 1987-01, Vol.50 (8), p.448-450

1987

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High-speed 1.3 μm InGaAs/GaAs metal-semiconductor-metal photodetector

Applied physics letters, 1991-01, Vol.58 (4), p.325-327

1991

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Thermally stable, superlattice-enhanced 1.3-mu m InGaAs IMSMphotodetectors on GaAs substrates

IEEE electron device letters, 1991-06, Vol.12 (6), p.281-283

1991

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Interaction of deep-level traps with the lowest and upper conduction minima in InP

Journal of applied physics, 1980-01, Vol.51 (1), p.423-432

1980

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Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealing

Applied physics letters, 1987-02, Vol.50 (8), p.448-450

1987

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Thermally stable, superlattice-enhanced 1.3- mu m InGaAs IMSM photodetectors on GaAs substrates

IEEE electron device letters, 1991-06, Vol.12 (6), p.281-283

1991

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Ionization coefficients measured in abrupt InP junctions

Applied physics letters, 1980-02, Vol.36 (4), p.302-303

1980

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Interconnect Metallization Technique for GaAs Digital IC's

Journal of the Electrochemical Society, 1987-03, Vol.134 (3), p.750-752

1987

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Zn diffusion in GaAs obtained by a simple open-tube technique

Journal of applied physics, 1986-11, Vol.60 (9), p.3379-3380

1986

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Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp

Applied physics letters, 1983-09, Vol.43 (5), p.505-507

1983

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Cathodoluminescence observation of metallization-induced stress variations in GaAs/AlGaAs multiple quantum well structures

Applied physics letters, 1988-05, Vol.52 (21), p.1806-1808

1988

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Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing

Applied physics letters, 1986-12, Vol.49 (26), p.1787-1789

1986

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A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGaAs

Journal of the Electrochemical Society, 1987-10, Vol.134 (10), p.2631-2634

1987

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Hole traps in n-InP by d.l.t.s. and transient capacitance techniques

Electronics letters, 1979, Vol.15 (9), p.247

1979

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Ion implantation of Si and Be in Al(0.48)In(0.52)As

Journal of applied physics, 1983-08, Vol.54, p.4374-4377. 14

1983

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Very low resistance ohmic contacts on p -type InP by direct plating

Applied physics letters, 1982-01, Vol.40 (5), p.398-400

1982

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Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp

Applied physics letters, 1983-08, Vol.43 (4), p.381-383

1983

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Deep-level traps and the conduction-band structure of InP

Applied physics letters, 1978-12, Vol.33 (11), p.957-959

1978

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Ion implantation of Si in Be-implanted In sub(0.53)Ga sub(0.47)As

Applied physics letters, 1982-01, Vol.40 (7), p.607-608

1982

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Ion implantation of Be in In sub(0.53)Ga sub(0.47)As

Applied physics letters, 1982-01, Vol.40 (6), p.517-519

1982

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Triple implant (In,Ga)As/InP n-p-n heterojunction bipolar transistors for integrated circuit applications

IEEE electron device letters, 1984-07, Vol.5 (7), p.251-253

1984

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Ion implantation of Be in In0.53Ga0.47As

Applied physics letters, 1982-01, Vol.40 (6), p.517-519

1982

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Electrical characteristics of Be-implanted GaAs diodes annealed with an ultrahigh power argon arc lamp

Applied physics letters, 1983-10, Vol.43 (7), p.647-649

1983

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CORD: contention resolution by delay lines

Method of improving light coupling efficiency between optical fibers and silicon waveguides

Improved activation of Mg super(+) and As super(+) dual implants in GaAs by capless rapid thermal annealing

High-speed 1.3 μm InGaAs/GaAs metal-semiconductor-metal photodetector

Thermally stable, superlattice-enhanced 1.3-mu m InGaAs IMSMphotodetectors on GaAs substrates

Interaction of deep-level traps with the lowest and upper conduction minima in InP

Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealing

Thermally stable, superlattice-enhanced 1.3- mu m InGaAs IMSM photodetectors on GaAs substrates

Ionization coefficients measured in abrupt InP junctions

Interconnect Metallization Technique for GaAs Digital IC's

Zn diffusion in GaAs obtained by a simple open-tube technique

Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp

Cathodoluminescence observation of metallization-induced stress variations in GaAs/AlGaAs multiple quantum well structures

Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing

A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGaAs

Hole traps in n-InP by d.l.t.s. and transient capacitance techniques

Ion implantation of Si and Be in Al(0.48)In(0.52)As

Very low resistance ohmic contacts on p -type InP by direct plating

Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp

Deep-level traps and the conduction-band structure of InP

Ion implantation of Si in Be-implanted In sub(0.53)Ga sub(0.47)As

Ion implantation of Be in In sub(0.53)Ga sub(0.47)As

Triple implant (In,Ga)As/InP n-p-n heterojunction bipolar transistors for integrated circuit applications

Ion implantation of Be in In0.53Ga0.47As

Electrical characteristics of Be-implanted GaAs diodes annealed with an ultrahigh power argon arc lamp

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