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Electron injection mechanisms of green organic light-emitting devices fabricated utilizing a double electron injection layer consisting of cesium carbonate and fullerene

Thin solid films, 2010-09, Vol.518 (22), p.6149-6152

2010

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Luminescence mechanisms of organic/inorganic hybrid organic light-emitting devices fabricated utilizing a Zn2SiO4:Mn color-conversion layer

Thin solid films, 2010-09, Vol.518 (22), p.6308-6310

2010

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Effect of doped emitting layer on electrical and optical properties in blue organic light-emitting devices

Thin solid films, 2009-07, Vol.517 (17), p.5314-5317

2009

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Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam

Applied physics letters, 2002-03, Vol.80 (12), p.2168-2170

2002

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High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices

Applied surface science, 2006-12, Vol.253 (4), p.1917-1920

2006

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Color tunable white organic light-emitting devices with a hybrid 2-methyl-9,10-di(2-naphthyl)anthracene small molecule/poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenevinylene) polymer emitting layer

Thin solid films, 2012-10, Vol.521, p.189-192

2012

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Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers

Thin solid films, 2007-04, Vol.515 (12), p.5099-5102

2007

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Enhancement of Luminance Efficiency in Green Organic Light-Emitting Devices Utilizing a Cesium Nitrate/Lithium Quinolate Electron Injection Layer

Molecular Crystals and Liquid Crystals, 2011-01, Vol.551 (1), p.47-53

2011

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Optical parameters in SnO2 nanocrystalline textured films grown on p-InSb (111) substrates

The Journal of physics and chemistry of solids, 2002-05, Vol.63 (5), p.881-885

2002

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Luminescence mechanisms of green and blue organic light-emitting devices utilizing hole-blocking layers

Solid state communications, 2005-05, Vol.134 (5), p.367-372

2005

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Effective barrier height and work function of Mg:Ag thin films with a low Mg concentration acting as cathodes in high-efficiency organic light emitting devices

Solid state communications, 2005-11, Vol.136 (6), p.365-368

2005

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Dependence of the activation energies on the well width in CdTe/ZnTe strained single quantum wells

Solid state communications, 2002-03, Vol.121 (9), p.571-574

2002

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Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

Journal of crystal growth, 2002-05, Vol.241 (1), p.63-68

2002

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Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

Solid state communications, 2002-04, Vol.122 (3), p.229-232

2002

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Strain effects, electronic parameters, and electronic structures in modulation-doped InxGa1−xAs/InyAl1−yAs coupled step-rectangular quantum wells

Journal of applied physics, 2003-12, Vol.94 (12), p.7621-7625

2003

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Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

Journal of applied physics, 2002-05, Vol.91 (9), p.5657-5660

2002

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Microstructural and optical properties of strain compensated InxGa1-xAs/InyAl1-yAs multiple quantum wells

The Journal of physics and chemistry of solids, 2002-01, Vol.63 (1), p.89-93

2002

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Electronic parameters and electronic structures in modulation-doped highly strained InxGa1-xAs/InyAl1-yAs coupled double quantum wells

Solid state communications, 2004-02, Vol.129 (8), p.533-537

2004

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The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures

The Journal of physics and chemistry of solids, 2003-02, Vol.64 (2), p.357-360

2003

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The dependence of the structural and optical properties on the Te mole fraction in ZnS1-xTex/GaAs heterostructures

The Journal of physics and chemistry of solids, 2003-04, Vol.64 (4), p.535-538

2003

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Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers

Solid state communications, 2001-05, Vol.118 (9), p.465-468

2001

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Microstructural, magnetotransport, and electronic subband studies of InAsxP1-x/InP modulation-doped strained single quantum wells

The Journal of physics and chemistry of solids, 2002, Vol.63 (5), p.875-879

2002

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Enhancement of the lifetime in organic light-emitting devices fabricated utilizing wide-bandgap-impurity-doped emitting layers

Thin solid films, 2008-04, Vol.516 (11), p.3610-3613

2008

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Simulation of the drain current and transconductance as functions of the source voltage observed in two-terminal diodes fabricated utilizing a focused ion-beam technique

Solid state communications, 2000-01, Vol.115 (2), p.77-80

2000

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Strain effects and atomic structures in highly lattice-mismatched InAs0.6P0.4/InP modulation-doped single quantum wells

Materials research bulletin, 2001-05, Vol.36 (7-8), p.1237-1243

2001

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Electron injection mechanisms of green organic light-emitting devices fabricated utilizing a double electron injection layer consisting of cesium carbonate and fullerene

Luminescence mechanisms of organic/inorganic hybrid organic light-emitting devices fabricated utilizing a Zn2SiO4:Mn color-conversion layer

Effect of doped emitting layer on electrical and optical properties in blue organic light-emitting devices

Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam

High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices

Color tunable white organic light-emitting devices with a hybrid 2-methyl-9,10-di(2-naphthyl)anthracene small molecule/poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenevinylene) polymer emitting layer

Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers

Enhancement of Luminance Efficiency in Green Organic Light-Emitting Devices Utilizing a Cesium Nitrate/Lithium Quinolate Electron Injection Layer

Optical parameters in SnO2 nanocrystalline textured films grown on p-InSb (111) substrates

Luminescence mechanisms of green and blue organic light-emitting devices utilizing hole-blocking layers

Effective barrier height and work function of Mg:Ag thin films with a low Mg concentration acting as cathodes in high-efficiency organic light emitting devices

Dependence of the activation energies on the well width in CdTe/ZnTe strained single quantum wells

Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

Strain effects, electronic parameters, and electronic structures in modulation-doped InxGa1−xAs/InyAl1−yAs coupled step-rectangular quantum wells

Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

Microstructural and optical properties of strain compensated InxGa1-xAs/InyAl1-yAs multiple quantum wells

Electronic parameters and electronic structures in modulation-doped highly strained InxGa1-xAs/InyAl1-yAs coupled double quantum wells

The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures

The dependence of the structural and optical properties on the Te mole fraction in ZnS1-xTex/GaAs heterostructures

Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers

Microstructural, magnetotransport, and electronic subband studies of InAsxP1-x/InP modulation-doped strained single quantum wells

Enhancement of the lifetime in organic light-emitting devices fabricated utilizing wide-bandgap-impurity-doped emitting layers

Simulation of the drain current and transconductance as functions of the source voltage observed in two-terminal diodes fabricated utilizing a focused ion-beam technique

Strain effects and atomic structures in highly lattice-mismatched InAs0.6P0.4/InP modulation-doped single quantum wells

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