UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Effects of polyimide curing on image sticking behaviors of flexible displays

Scientific reports, 2021-11, Vol.11 (1), p.21805-21805, Article 21805

2021

Volltextzugriff (PDF)

Effect of ALD- and PEALD- Grown Al2O3 Gate Insulators on Electrical and Stability Properties for a-IGZO Thin-Film Transistor

Electronic Materials Letters, 2021, 17(4), , pp.299-306

2021

Volltextzugriff (PDF)

Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

AIP advances, 2021-03, Vol.11 (3), p.035312-035312-5

2021

Volltextzugriff (PDF)

Band alignment of atomic layer deposited (HfZrO4) 1−x (SiO2) x gate dielectrics on Si (100)

Applied physics letters, 2015-11, Vol.107 (18)

2015

Volltextzugriff (PDF)

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

AIP advances, 2015-07, Vol.5 (7), p.077167-077167-8

2015

Volltextzugriff (PDF)

Electrical evaluation of the crystallization characteristics of excimer laser annealed polycrystalline silicon active layer

Japanese Journal of Applied Physics, 2018-10, Vol.57 (10), p.106503

2018

Volltextzugriff (PDF)

Effect of PECVD Gate SiO2 Thickness on the Poly-Si/SiO2 Interface in Low-Temperature Polycrystalline Silicon TFTs

Journal of Electrical Engineering & Technology, 2021, 16(2), , pp.1027-1033

2021

Volltextzugriff (PDF)

Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors

Journal of nanoscience and nanotechnology, 2016-05, Vol.16 (5), p.4851-4855

2016

Volltextzugriff (PDF)

Hydrogen Permeation and Its Impacts on the Electrical Performance of Stacked ZrO 2 /Al 2 O 3 /ZrO 2 Films

Journal of nanoscience and nanotechnology, 2020-11, Vol.20 (11), p.6638-6642

2020

Volltextzugriff (PDF)

Determination of the Drain Saturation Voltage of a Metal--Oxide--Semiconductor Field-Effect Transistor by the Capacitance--Voltage Method

Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.068005-068005-2

2013

Volltextzugriff (PDF)

Evaluation of Minority Carrier Generation Lifetime for Oxide Semiconductors

Thin solid films, 2020-06, Vol.704, p.138023, Article 138023

2020

Volltextzugriff (PDF)

Effect of Bias Temperature Stress on the Anti-Reflection HfO2 Layer in Complementary Metal Oxide Semiconductor Image Sensors

Jpn J Appl Phys, 2013-10, Vol.52 (10), p.10MC02-10MC02-5

2013

Volltextzugriff (PDF)

Bias stress instability of LTPS TFTs on flexible substrate with activation annealing temperature

Microelectronics and reliability, 2020-10, Vol.113, p.113940, Article 113940

2020

Volltextzugriff (PDF)

Improvement of negative bias temperature instability of LTPS TFTs by high pressure H2O annealing

Microelectronics and reliability, 2021-01, Vol.116, p.113963, Article 113963

2021

Volltextzugriff (PDF)

Double layer SiNx:H films for passivation and anti-reflection coating of c-Si solar cells

Thin solid films, 2011-08, Vol.519 (20), p.6887-6891

2011

Volltextzugriff (PDF)

Implementation of a Novel Audio Network Protocol

Archives of acoustics, 2023-07

2023

Volltextzugriff (PDF)

Gate leakage current reduction and improved reliability with an ultra-thin Ti layer for low-power applications

Thin solid films, 2020-08, Vol.708, p.138102, Article 138102

2020

Volltextzugriff (PDF)

Solution-Based Indium–Zinc Oxide/Indium–Gallium–Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide

Journal of nanoscience and nanotechnology, 2020-11, Vol.20 (11), p.6643-6647

2020

Volltextzugriff (PDF)

Atomic layer-deposited (HfZrO4)1−x(SiO2)x thin films for gate stack applications

Thin solid films, 2018-04, Vol.652, p.2-9

2018

Volltextzugriff (PDF)

A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(6), 54, pp.662-667

2013

Volltextzugriff (PDF)

Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress

Journal of nanoscience and nanotechnology, 2021-08, Vol.21 (8), p.4277-4284

2021

Volltextzugriff (PDF)

Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor

Journal of nanoscience and nanotechnology, 2020-11, Vol.20 (11), p.6675-6678

2020

Volltextzugriff (PDF)

The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

Volltextzugriff (PDF)

Dielectric Properties of Solution-Processed ZrO2 for Thin-Film Transistors

Journal of nanoscience and nanotechnology, 2016-10, Vol.16 (10), p.10380-10384

2016

Volltextzugriff (PDF)

Defect Analysis and Reliability Characteristics of (HfZrO 4 ) 1− x (SiO 2 ) x High- κ Dielectrics

Journal of nanoscience and nanotechnology, 2020-11, Vol.20 (11), p.6718-6722

2020

Volltextzugriff (PDF)

1 – 25 von 52

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(24)
Mit Volltextzugriff
(27)

Publikationsform

Artikel
(52)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(32)
Physics
(28)
Physical Sciences
(27)
Physics, Applied
(27)
Technology
(27)
Materials Science
(21)
Materials Science, Multidisciplinary
(20)
Science & Technology - Other Topics
(18)
Nanoscience & Nanotechnology
(17)
Physics, Condensed Matter
(16)
Chemistry
(12)
Chemistry, Multidisciplinary
(12)
Semiconductor Devices
(11)
Thin Film Transistors
(10)
Bias
(7)
Zinc Oxide
(7)
Electrical Properties
(6)
Engineering
(6)
Engineering, Electrical & Electronic
(6)
Gallium
(6)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Effects of polyimide curing on image sticking behaviors of flexible displays

Effect of ALD- and PEALD- Grown Al2O3 Gate Insulators on Electrical and Stability Properties for a-IGZO Thin-Film Transistor

Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

Band alignment of atomic layer deposited (HfZrO4) 1−x (SiO2) x gate dielectrics on Si (100)

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

Electrical evaluation of the crystallization characteristics of excimer laser annealed polycrystalline silicon active layer

Effect of PECVD Gate SiO2 Thickness on the Poly-Si/SiO2 Interface in Low-Temperature Polycrystalline Silicon TFTs

Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors

Hydrogen Permeation and Its Impacts on the Electrical Performance of Stacked ZrO 2 /Al 2 O 3 /ZrO 2 Films

Determination of the Drain Saturation Voltage of a Metal--Oxide--Semiconductor Field-Effect Transistor by the Capacitance--Voltage Method

Evaluation of Minority Carrier Generation Lifetime for Oxide Semiconductors

Effect of Bias Temperature Stress on the Anti-Reflection HfO2 Layer in Complementary Metal Oxide Semiconductor Image Sensors

Bias stress instability of LTPS TFTs on flexible substrate with activation annealing temperature

Improvement of negative bias temperature instability of LTPS TFTs by high pressure H2O annealing

Double layer SiNx:H films for passivation and anti-reflection coating of c-Si solar cells

Implementation of a Novel Audio Network Protocol

Gate leakage current reduction and improved reliability with an ultra-thin Ti layer for low-power applications

Solution-Based Indium–Zinc Oxide/Indium–Gallium–Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide

Atomic layer-deposited (HfZrO4)1−x(SiO2)x thin films for gate stack applications

A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)

Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress

Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor

The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress

Dielectric Properties of Solution-Processed ZrO2 for Thin-Film Transistors

Defect Analysis and Reliability Characteristics of (HfZrO 4 ) 1− x (SiO 2 ) x High- κ Dielectrics

Suchergebnisse filtern