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Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

IEEE electron device letters, 2024-03, Vol.45 (3), p.404-407

2024

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Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1

2023

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Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1839-1844

2024

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Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5542-5548

2022

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Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Electronic Materials Letters, 2022, 18(3), , pp.294-303

2022

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Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

IEEE electron device letters, 2022-11, Vol.43 (11), p.1909-1912

2022

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Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

Thin solid films, 2008-11, Vol.517 (2), p.848-852

2008

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Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2gate insulator

Nanotechnology, 2021-06, Vol.32 (25)

2021

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Sb-Se-based phase-change memory device with lower power and higher speed operations

IEEE electron device letters, 2006-06, Vol.27 (6), p.445-447

2006

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Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors

Journal of applied physics, 2024-08, Vol.136 (7)

2024

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Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator

ACS applied materials & interfaces, 2023-11, Vol.15 (47), p.54622-54633

2023

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Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors

Journal of alloys and compounds, 2022-06, Vol.906, p.164283, Article 164283

2022

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Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions

Nanotechnology, 2020-10, Vol.31 (43), p.435702-435702

2020

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Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

ACS applied materials & interfaces, 2022-07, Vol.14 (27), p.31010-31023

2022

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Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration

Nanotechnology, 2023-04, Vol.34 (15), p.155301

2023

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Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-07, Vol.39 (4)

2021

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Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2022-07, Vol.40 (4)

2022

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Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors

Ceramics international, 2022-07, Vol.48 (14), p.20905-20913

2022

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The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Thin solid films, 2008-10, Vol.516 (23), p.8810-8812

2008

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Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm

Materials science in semiconductor processing, 2024-03, Vol.171, p.108025, Article 108025

2024

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Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer

Materials science in semiconductor processing, 2024-08, Vol.178, p.108476, Article 108476

2024

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Polycrystalline silicon-germanium heating layer for phase-change memory applications

Applied physics letters, 2006-07, Vol.89 (5)

2006

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Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor

Electronic materials letters, 2024, Vol.20 (6), p.702-710

2024

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Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm

Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-09, Vol.12 (36), p.14455-14468

2024

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Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn‑O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

ACS applied electronic materials, 2022-12, Vol.4 (12), p.6215-6228

2022

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Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2gate insulator

Sb-Se-based phase-change memory device with lower power and higher speed operations

Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator

Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors

Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration

Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors

The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm

Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer

Polycrystalline silicon-germanium heating layer for phase-change memory applications

Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor

Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm

Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn‑O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

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