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Artificial optic-neural synapse for colored and color-mixed pattern recognition

Nature communications, 2018-11, Vol.9 (1), p.5106-8, Article 5106

2018

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Silver‐Adapted Diffusive Memristor Based on Organic Nitrogen‐Doped Graphene Oxide Quantum Dots (N‐GOQDs) for Artificial Biosynapse Applications

Advanced functional materials, 2019-05, Vol.29 (18), p.n/a

2019

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Towards engineering in memristors for emerging memory and neuromorphic computing: A review

Journal of semiconductors, 2021-01, Vol.42 (1), p.13101-55

2021

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Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse

Journal of alloys and compounds, 2020-05, Vol.822, p.153625, Article 153625

2020

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Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device

Scientific reports, 2018-01, Vol.8 (1), p.1228-10, Article 1228

2018

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High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

Advanced materials (Weinheim), 2016-08, Vol.28 (32), p.6985-6992

2016

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Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

Nano research, 2022-03, Vol.15 (3), p.2263-2277

2022

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Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device

NPG Asia materials, 2019, Vol.11 (1), Article 5

2019

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A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Advanced materials (Weinheim), 2016-06, Vol.28 (24), p.4824-4831

2016

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Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing

Journal of alloys and compounds, 2018-08, Vol.759, p.44-51

2018

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Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics

Journal of materials science. Materials in electronics, 2020, Vol.31 (2), p.903-909

2020

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SnO2 encapsulated TiO2 hollow nanofibers as anode material for lithium ion batteries

Electrochemistry communications, 2012-08, Vol.22, p.81-84

2012

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The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non‐Volatile Devices

Advanced science, 2024-08, Vol.11 (31), p.e2402667-n/a

2024

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The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

Applied physics letters, 2014-09, Vol.105 (9)

2014

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Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System

Advanced intelligent systems, 2024-06, Vol.6 (6), p.n/a

2024

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Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors

IEEE electron device letters, 2015-09, Vol.36 (9), p.884-886

2015

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A Neuromorphic Device Implemented on a Salmon‐DNA Electrolyte and its Application to Artificial Neural Networks

Advanced science, 2019-09, Vol.6 (17), p.1901265-n/a

2019

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Improved analog switching characteristics of Ta2O5-based memristor using indium tin oxide buffer layer for neuromorphic computing

Nanotechnology, 2022-03, Vol.33 (24)

2022

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Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix

Materials science in semiconductor processing, 2024-08, Vol.179, p.108471, Article 108471

2024

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Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

Nanomaterials (Basel, Switzerland), 2020-05, Vol.10 (5), p.994

2020

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Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment

IEEE electron device letters, 2016-04, Vol.37 (4), p.373-376

2016

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Improved analog switching characteristics of Ta 2 O 5 -based memristor using indium tin oxide buffer layer for neuromorphic computing

Nanotechnology, 2022-06, Vol.33 (24), p.245202

2022

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The Design and Analysis of a Feeder Pipe Inspection Robot With an Automatic Pipe Tracking System

IEEE/ASME transactions on mechatronics, 2010-10, Vol.15 (5), p.736-745

2010

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Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems

Applied surface science, 2020-11, Vol.529, p.147107, Article 147107

2020

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Artificial optic-neural synapse for colored and color-mixed pattern recognition

Silver‐Adapted Diffusive Memristor Based on Organic Nitrogen‐Doped Graphene Oxide Quantum Dots (N‐GOQDs) for Artificial Biosynapse Applications

Towards engineering in memristors for emerging memory and neuromorphic computing: A review

Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device

High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device

A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing

Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics

SnO2 encapsulated TiO2 hollow nanofibers as anode material for lithium ion batteries

The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non‐Volatile Devices

The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System

Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors

A Neuromorphic Device Implemented on a Salmon‐DNA Electrolyte and its Application to Artificial Neural Networks

Improved analog switching characteristics of Ta2O5-based memristor using indium tin oxide buffer layer for neuromorphic computing

Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment

Improved analog switching characteristics of Ta 2 O 5 -based memristor using indium tin oxide buffer layer for neuromorphic computing

The Design and Analysis of a Feeder Pipe Inspection Robot With an Automatic Pipe Tracking System

Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems

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