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Wafer-Scale, Homogeneous MoS2 Layers on Plastic Substrates for Flexible Visible-Light Photodetectors

Advanced materials (Weinheim), 2016-07, Vol.28 (25), p.5025-5030

2016

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Anomalous Optoelectric Properties of an Ultrathin Ruthenium Film with a Surface Oxide Layer for Flexible Transparent Conducting Electrodes

Advanced functional materials, 2022-04, Vol.32 (14), p.n/a

2022

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2D Single‐Crystalline Copper Nanoplates as a Conductive Filler for Electronic Ink Applications

Small (Weinheim an der Bergstrasse, Germany), 2018-02, Vol.14 (8), p.n/a

2018

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Controlled Electronic and Magnetic Landscape in Self‐Assembled Complex Oxide Heterostructures

Advanced materials (Weinheim), 2023-08, Vol.35 (32), p.e2300200-n/a

2023

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Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes

Applied physics. A, Materials science & processing, 2021-10, Vol.127 (10), Article 803

2021

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Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer

Journal of materials science. Materials in electronics, 2021-03, Vol.32 (6), p.8092-8105

2021

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Microstructural, wetting, and dielectric properties of plasma polymerized polypyrrole thin films

Journal of applied polymer science, 2016-10, Vol.133 (38), p.np-n/a

2016

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Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

Advanced materials interfaces, 2023-04, Vol.10 (12), p.n/a

2023

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Substrate temperature influenced ZrO2 films for MOS devices

Surface and interface analysis, 2020-09, Vol.52 (9), p.541-546

2020

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Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Journal of alloys and compounds, 2014-11, Vol.614, p.323-329

2014

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Dose-dependency of contact resistance and sheet resistance of B-implanted emitters for N-type crystalline Si solar cells fabricated using screen-printed fire-through Ag/Al paste metallization process

Journal of the Korean Physical Society, 2023-04, Vol.82 (7), p.707-711

2023

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Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping

Advanced materials (Weinheim), 2018-09, Vol.30 (39), p.e1802025-n/a

2018

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Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

Applied physics. A, Materials science & processing, 2018-02, Vol.124 (2), p.1-10, Article 115

2018

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A study of the correlation between the oxidation degree and thickness of graphene oxides

Carbon (New York), 2022-04, Vol.189, p.579-585

2022

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Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate

Crystals (Basel), 2024-02, Vol.14 (2), p.134

2024

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Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells

Applied physics letters, 2012-08, Vol.101 (7), p.73902

2012

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Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures

Advanced materials (Weinheim), 2010-11, Vol.22 (44), p.5058-5062

2010

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CdS quantum dots grown by in situ chemical bath deposition for quantum dot-sensitized solar cells

Journal of applied physics, 2011-08, Vol.110 (4), p.044313-044313-4

2011

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Direct Observation of the Structural Component of the Metal−Insulator Phase Transition and Growth Habits of Epitaxially Grown VO2 Nanowires

Nano letters, 2007-06, Vol.7 (6), p.1570-1574

2007

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Enhancement of light output power in ultraviolet light emitting diodes using graphene film on self-assembled Au nanocluster by agglomeration process

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Growth of silicon nanowires in aqueous solution under atmospheric pressure

Nano research, 2014-06, Vol.7 (6), p.898-902

2014

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Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Exploration of microstructural, chemical states and electrical features of the Au/Er2O3/n-GaN MIS diode with a Er2O3 interlayer

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-12, Vol.298, p.116914, Article 116914

2023

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Electric transport through perovskite La(Fe,Ga)O3 nanowires formed by electrospinning

Applied physics letters, 2014-10, Vol.105 (15)

2014

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Study of degradation in bulk lifetime of n-type silicon wafer due to oxidation of boron-rich layer

Current Applied Physics, 2016, 16(5), , pp.497-500

2016

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Wafer-Scale, Homogeneous MoS2 Layers on Plastic Substrates for Flexible Visible-Light Photodetectors

Anomalous Optoelectric Properties of an Ultrathin Ruthenium Film with a Surface Oxide Layer for Flexible Transparent Conducting Electrodes

2D Single‐Crystalline Copper Nanoplates as a Conductive Filler for Electronic Ink Applications

Controlled Electronic and Magnetic Landscape in Self‐Assembled Complex Oxide Heterostructures

Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes

Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer

Microstructural, wetting, and dielectric properties of plasma polymerized polypyrrole thin films

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

Substrate temperature influenced ZrO2 films for MOS devices

Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Dose-dependency of contact resistance and sheet resistance of B-implanted emitters for N-type crystalline Si solar cells fabricated using screen-printed fire-through Ag/Al paste metallization process

Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

A study of the correlation between the oxidation degree and thickness of graphene oxides

Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate

Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells

Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures

CdS quantum dots grown by in situ chemical bath deposition for quantum dot-sensitized solar cells

Direct Observation of the Structural Component of the Metal−Insulator Phase Transition and Growth Habits of Epitaxially Grown VO2 Nanowires

Enhancement of light output power in ultraviolet light emitting diodes using graphene film on self-assembled Au nanocluster by agglomeration process

Growth of silicon nanowires in aqueous solution under atmospheric pressure

Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

Exploration of microstructural, chemical states and electrical features of the Au/Er2O3/n-GaN MIS diode with a Er2O3 interlayer

Electric transport through perovskite La(Fe,Ga)O3 nanowires formed by electrospinning

Study of degradation in bulk lifetime of n-type silicon wafer due to oxidation of boron-rich layer

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