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Volatile and Nonvolatile Memory Devices for Neuromorphic and Processing-in-memory Applications

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022, 22(1), 103, pp.30-46

Cho, Seongjae

2022

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Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing

The Journal of chemical physics, 2024-07, Vol.161 (1)

2024

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Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing

Scientific reports, 2022-03, Vol.12 (1), p.3808-12, Article 3808

2022

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Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

Nanoscale research letters, 2022-07, Vol.17 (1), p.1-14

2022

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Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma

The Journal of chemical physics, 2023-11, Vol.159 (18)

2023

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Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Nature communications, 2019-10, Vol.10 (1), p.1-10, Article 4701

2019

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Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4610-4616

2016

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RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1388-1396

2011

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A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

Applied physics letters, 2019-05, Vol.114 (18)

2019

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Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

Applied physics letters, 2015-05, Vol.106 (21)

2015

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Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies

Materials, 2023-12, Vol.16 (24), p.7510

2023

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Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Nanomaterials (Basel, Switzerland), 2021-03, Vol.11 (4), p.832

2021

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Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

Materials, 2023-02, Vol.16 (3), p.1249

2023

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Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1290-1297

2018

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More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring

Applied physics. A, Materials science & processing, 2020-11, Vol.126 (11), Article 839

2020

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Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

Japanese Journal of Applied Physics, 2016-11, Vol.55 (11), p.114001

2016

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Fully Si compatible SiN resistive switching memory with large self-rectification ratio

AIP advances, 2016-01, Vol.6 (1), p.015021-015021-6

2016

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A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2024, 24(1), 115, pp.47-54

2024

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An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network

IET circuits, devices & systems, 2023-12, Vol.2023, p.1-10

2023

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FeNP@MIL-101(Fe)-Based Carbon Nanotube Composite for Energy Storage Applications

ACS omega, 2024-06, Vol.9 (23), p.24546-24557

2024

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A Compact Integrate-and-Fire Neuron Circuit Embedding Operational Transconductance Amplifier for Fidelity Enhancement

IEEE access, 2023, Vol.11, p.53932-53938

2023

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Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4164-4171

2011

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The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfOx/W Bilayer-Structured Memory Device

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (21), p.2856

2023

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Volatile and Nonvolatile Memory Devices for Neuromorphic and Processing-in-memory Applications

Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing

Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing

Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes

RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies

Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation

Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes

More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring

Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array

An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network

FeNP@MIL-101(Fe)-Based Carbon Nanotube Composite for Energy Storage Applications

A Compact Integrate-and-Fire Neuron Circuit Embedding Operational Transconductance Amplifier for Fidelity Enhancement

Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfOx/W Bilayer-Structured Memory Device

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