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Experimental and Theoretical Study of Deviations from Vegard's Law in the SnxGe1-x System

Chemistry of materials, 2003-07, Vol.15 (13), p.2511-2519

2003

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TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

Annual review of materials research, 2006-01, Vol.36 (1), p.497-554

2006

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Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry

Chemistry of materials, 2007-11, Vol.19 (24), p.5910-5925

2007

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Practical routes to (SiH3)3P: Applications in group IV semiconductor activation and in group III-V molecular synthesis

Dalton transactions : an international journal of inorganic chemistry, 2010, Vol.39 (19), p.4551-4558

2010

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CdSe With Mixed Zincblende and Wurtzite Phases Grown on Lattice-Matched InAs Substrates Using Molecular Beam Epitaxy

IEEE journal of photovoltaics, 2024-09, Vol.14 (5), p.752-757

2024

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Ge–Sn semiconductors for band-gap and lattice engineering

Applied physics letters, 2002-10, Vol.81 (16), p.2992-2994

2002

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Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

Applied physics letters, 2007-02, Vol.90 (6)

2007

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Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)

Applied physics letters, 2009-11, Vol.95 (18)

2009

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Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry

Chemistry of materials, 2014-08, Vol.26 (15), p.4447-4458

2014

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novel predictive model for formation enthalpies of Si and Ge hydrides with propane- and butane-like structures

Journal of computational chemistry, 2011-04, Vol.32 (5), p.835-853

2011

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Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

Applied physics letters, 2006-12, Vol.89 (23)

2006

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Si−Ge-based Oxynitrides: From Molecules to Solids

Chemistry of materials, 2010-07, Vol.22 (13), p.3884-3899

2010

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Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties

Solid-state electronics, 2009-08, Vol.53 (8), p.816-823

2009

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Optical and structural properties of SixSnyGe1−x−y alloys

Applied physics letters, 2004-02, Vol.84 (6), p.888-890

2004

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Structural, electronic and optical properties of nano-structural BNC3 alloys

Carbon (New York), 2021-05, Vol.176, p.188-197

Chizmeshya, A.V.G.

2021

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Versatile buffer layer architectures based on Ge1−xSnx alloys

Applied physics letters, 2005-05, Vol.86 (19)

2005

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Practical B and P doping via SixSnyGe1−x−y−zMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

Applied physics letters, 2009-08, Vol.95 (8)

2009

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Atomic Scale Studies of Structure and Bonding in A1PSi3 Alloys Grown Lattice-matched on Si(001)

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.524-525

2014

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Ab initio thermochemistry study of polymorphism in the Si2N2(NH) analog of Si2N2O

Computational materials science, 2021-12, Vol.200, p.110772, Article 110772

2021

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Synthesis of Molecular Adducts of Beryllium, Boron, and Gallium Cyanides: Theoretical and Experimental Correlations between Solid-State and Molecular Analogues

Chemistry of materials, 2007-11, Vol.19 (24), p.5890-5901

2007

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Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

Applied physics letters, 2003-04, Vol.82 (15), p.2398-2400

2003

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Designer hydride routes to 'Si–Ge'/(Gd,Er)2O3/Si(1 1 1) semiconductor-on-insulator heterostructures

Semiconductor science and technology, 2011-12, Vol.26 (12), p.125005

2011

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Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices

ECS journal of solid state science and technology, 2013-01, Vol.2 (9), p.Q172-Q177

2013

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Thermoelastic and Optical Properties of Thick Boride Templates on Silicon for Nitride Integration Applications

Chemistry of materials, 2008-02, Vol.20 (4), p.1431-1442

2008

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Structural and optical properties of ZrB2 and HfxZr1−xB2 films grown by vicinal surface epitaxy on Si(111) substrates

Solid-state electronics, 2008-11, Vol.52 (11), p.1687-1690

2008

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Experimental and Theoretical Study of Deviations from Vegard's Law in the SnxGe1-x System

TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry

Practical routes to (SiH3)3P: Applications in group IV semiconductor activation and in group III-V molecular synthesis

CdSe With Mixed Zincblende and Wurtzite Phases Grown on Lattice-Matched InAs Substrates Using Molecular Beam Epitaxy

Ge–Sn semiconductors for band-gap and lattice engineering

Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)

Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry

novel predictive model for formation enthalpies of Si and Ge hydrides with propane- and butane-like structures

Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

Si−Ge-based Oxynitrides: From Molecules to Solids

Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties

Optical and structural properties of SixSnyGe1−x−y alloys

Structural, electronic and optical properties of nano-structural BNC3 alloys

Versatile buffer layer architectures based on Ge1−xSnx alloys

Practical B and P doping via SixSnyGe1−x−y−zMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

Atomic Scale Studies of Structure and Bonding in A1PSi3 Alloys Grown Lattice-matched on Si(001)

Ab initio thermochemistry study of polymorphism in the Si2N2(NH) analog of Si2N2O

Synthesis of Molecular Adducts of Beryllium, Boron, and Gallium Cyanides: Theoretical and Experimental Correlations between Solid-State and Molecular Analogues

Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

Designer hydride routes to 'Si–Ge'/(Gd,Er)2O3/Si(1 1 1) semiconductor-on-insulator heterostructures

Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices

Thermoelastic and Optical Properties of Thick Boride Templates on Silicon for Nitride Integration Applications

Structural and optical properties of ZrB2 and HfxZr1−xB2 films grown by vicinal surface epitaxy on Si(111) substrates

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