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Post-Cu CMP cleaning for colloidal silica abrasive removal

Microelectronic engineering, 2004-11, Vol.75 (4), p.352-360

2004

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Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Applied physics letters, 2007-08, Vol.91 (8), p.082103-082103-3

2007

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Electrical Characteristics of the HfAlON Gate Dielectric With Interfacial UV-Ozone Oxide

IEEE electron device letters, 2008-01, Vol.29 (1), p.60-62

2008

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Novel post CMP cleaning using buffered HF solution and ozone water

Applied surface science, 2003-06, Vol.216 (1), p.46-53

2003

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Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors

Thin solid films, 2004-11, Vol.467 (1), p.215-219

2004

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Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors

Journal of applied physics, 2004-05, Vol.95 (10), p.5788-5794

2004

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Investigation of grain boundary control in the drain junction on laser-crystalized poly-Si thin film transistors

IEEE electron device letters, 2003-07, Vol.24 (7), p.457-459

2003

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Modeling of the Wear Mechanism during Chemical‐Mechanical Polishing

Journal of the Electrochemical Society, 1996-02, Vol.143 (2), p.716-721

1996

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Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate

Japanese Journal of Applied Physics, 2003-09, Vol.42 (Part 2, No.9A/B), p.L1044-L1046

2003

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The removal of airborne molecular contamination in cleanroom using PTFE and chemical filters

IEEE transactions on semiconductor manufacturing, 2004-05, Vol.17 (2), p.214-220

2004

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Impact of Air Filter Material on Metal Oxide Semiconductor (MOS) Device Characteristics in HF Vapor Environment

Japanese Journal of Applied Physics, 2004-05, Vol.43 (5B), p.L659

2004

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Reliability of Fluorinated Silicon Oxide Film Prepared by Temperature Difference-Based Liquid Phase Deposition

Journal of the Electrochemical Society, 2000-11, Vol.147 (11), p.4268

2000

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A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition

IEEE electron device letters, 1999-08, Vol.20 (8), p.421-423

1999

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Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films

Thin solid films, 1996-12, Vol.290, p.458-463

1996

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Application of Selective Liquid‐Phase Deposition to Fabricate Contact Holes Without Plasma Damage

Journal of the Electrochemical Society, 1999-06, Vol.146 (6), p.2294-2299

1999

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Characterization of the Chemical‐Mechanical Polishing Process Based on Nanoindentation Measurement of Dielectric Films

Journal of the Electrochemical Society, 1995-09, Vol.142 (9), p.3098-3104

1995

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Fabricating Thin-Film Transistors on Plastic Substrates Using Spin Etching and Device Transfer

Journal of the Electrochemical Society, 2005, Vol.152 (3), p.G227

2005

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Process Improvement and Reliability Characteristics of Spin-On Poly-3-hexylthiophene Thin-Film Transistor

Journal of the Electrochemical Society, 2005, Vol.152 (1), p.G50

2005

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Novel contact hole fabrication using selective liquid-phase deposition instead of reactive ion etching

IEEE electron device letters, 1999-01, Vol.20 (1), p.39-41

1999

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The effect of temperature on I-V characteristics of a Si:H photodiode

Japanese Journal of Applied Physics, 1992-09, Vol.31 (9A), p.L1226-L1228

1992

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Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFTs

IEEE electron device letters, 1998-11, Vol.19 (11), p.432-434

1998

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Pentacene-based thin film transistors used to drive a twist-nematic liquid crystal display

Thin solid films, 2005-11, Vol.491 (1), p.305-310

2005

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Effects of plasma treatment on the properties of room-temperature liquid-phase deposited (LPD) oxide films

Journal of non-crystalline solids, 1995-07, Vol.187, p.81-85

1995

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Novel Sidewall Capping for Degradation-Free Damascene Trenches of Low-Permittivity Methylsilsesquioxane

Japanese Journal of Applied Physics, 2000-04, Vol.39 (4B), p.L354

2000

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A novel four-mask-processed poly-Si TFT fabricated using excimer laser crystallization of an edge-thickened a-Si active island

IEEE electron device letters, 2004-06, Vol.25 (6), p.396-398

2004

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Post-Cu CMP cleaning for colloidal silica abrasive removal

Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Electrical Characteristics of the HfAlON Gate Dielectric With Interfacial UV-Ozone Oxide

Novel post CMP cleaning using buffered HF solution and ozone water

Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors

Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors

Investigation of grain boundary control in the drain junction on laser-crystalized poly-Si thin film transistors

Modeling of the Wear Mechanism during Chemical‐Mechanical Polishing

Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate

The removal of airborne molecular contamination in cleanroom using PTFE and chemical filters

Impact of Air Filter Material on Metal Oxide Semiconductor (MOS) Device Characteristics in HF Vapor Environment

Reliability of Fluorinated Silicon Oxide Film Prepared by Temperature Difference-Based Liquid Phase Deposition

A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition

Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films

Application of Selective Liquid‐Phase Deposition to Fabricate Contact Holes Without Plasma Damage

Characterization of the Chemical‐Mechanical Polishing Process Based on Nanoindentation Measurement of Dielectric Films

Fabricating Thin-Film Transistors on Plastic Substrates Using Spin Etching and Device Transfer

Process Improvement and Reliability Characteristics of Spin-On Poly-3-hexylthiophene Thin-Film Transistor

Novel contact hole fabrication using selective liquid-phase deposition instead of reactive ion etching

The effect of temperature on I-V characteristics of a Si:H photodiode

Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFTs

Pentacene-based thin film transistors used to drive a twist-nematic liquid crystal display

Effects of plasma treatment on the properties of room-temperature liquid-phase deposited (LPD) oxide films

Novel Sidewall Capping for Degradation-Free Damascene Trenches of Low-Permittivity Methylsilsesquioxane

A novel four-mask-processed poly-Si TFT fabricated using excimer laser crystallization of an edge-thickened a-Si active island

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