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Nonpolar and Semipolar Group III Nitride-Based Materials

MRS bulletin, 2009-05, Vol.34 (5), p.304-312

2009

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Urbach–Martienssen tail as the origin of the two-peak structure in the photoluminescence spectra for the near-band-edge emission of a freestanding GaN crystal observed by omnidirectional photoluminescence spectroscopy

Applied physics letters, 2020-10, Vol.117 (17)

2020

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Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

Applied physics letters, 2021-11, Vol.119 (18)

2021

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Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications

Applied physics letters, 2020-07, Vol.117 (3)

2020

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Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors

Applied physics letters, 2022-06, Vol.120 (23)

2022

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Structural, elastic, and polarization parameters and band structures of wurtzite ZnO and MgO

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film

Applied physics letters, 2019-10, Vol.115 (15)

2019

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Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping

Applied physics letters, 2016-01, Vol.108 (2)

2016

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High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

Journal of applied physics, 2014-12, Vol.116 (21)

2014

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Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer

Journal of crystal growth, 2012-08, Vol.353 (1), p.59-62

2012

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Polishing and etching damages of ZnO single crystals studied using time-resolved photoluminescence spectroscopy

Journal of applied physics, 2023-07, Vol.134 (2)

2023

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Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

Journal of applied physics, 2006-05, Vol.99 (9)

2006

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Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique

Journal of applied physics, 2012-05, Vol.111 (9), p.093522-093522-6

2012

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Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

Journal of crystal growth, 2007-07, Vol.305 (2), p.360-365

2007

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The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Femtosecond-laser-driven photoelectron-gun for time-resolved cathodoluminescence measurement of GaN

Review of scientific instruments, 2012-04, Vol.83 (4), p.043905-043905-7

2012

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Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

Applied physics letters, 2003-01, Vol.82 (4), p.532-534

2003

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Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Applied physics letters, 2012-11, Vol.101 (21)

2012

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Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

Applied physics letters, 2005-01, Vol.86 (2), p.021914-021914-3

2005

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Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

Applied physics letters, 2024-04, Vol.124 (18)

2024

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Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

Applied physics letters, 2023-05, Vol.122 (20)

2023

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Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis

Journal of crystal growth, 2012-06, Vol.348 (1), p.80-84

2012

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Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

Applied physics letters, 2018-05, Vol.112 (21)

2018

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Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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Nonpolar and Semipolar Group III Nitride-Based Materials

Urbach–Martienssen tail as the origin of the two-peak structure in the photoluminescence spectra for the near-band-edge emission of a freestanding GaN crystal observed by omnidirectional photoluminescence spectroscopy

Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications

Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors

Structural, elastic, and polarization parameters and band structures of wurtzite ZnO and MgO

In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film

Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer

Polishing and etching damages of ZnO single crystals studied using time-resolved photoluminescence spectroscopy

Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Femtosecond-laser-driven photoelectron-gun for time-resolved cathodoluminescence measurement of GaN

Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

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