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Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline Film

Advanced materials (Weinheim), 2017-11, Vol.29 (42), p.n/a

2017

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The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

Scientific reports, 2014-11, Vol.4 (1), p.7099-7099, Article 7099

2014

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Threshold resistive and capacitive switching behavior in binary amorphous GeSe

Journal of applied physics, 2012-05, Vol.111 (10), p.102807-102807-8

2012

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Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films

Scripta materialia, 2022-11, Vol.220, p.114899, Article 114899

2022

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Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior

Solid-state electronics, 2011-09, Vol.63 (1), p.1-4

2011

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Ovonic threshold switching induced local atomic displacements in amorphous Ge60Se40 film probed via in situ EXAFS under DC electric field

Journal of non-crystalline solids, 2021-09, Vol.568, p.120955, Article 120955

2021

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Structural and optical properties of phase-change amorphous and crystalline Ge1 − xTex (0 < x < 1) thin films

Physica status solidi. A, Applications and materials science, 2013-02, Vol.210 (2), p.267-275

2013

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Fast and scalable memory characteristics of Ge-doped SbTe phase change materials

physica status solidi (b), 2012-10, Vol.249 (10), p.1985-1991

2012

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A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling

IEEE electron device letters, 2009-05, Vol.30 (5), p.448-450

2009

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Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization

Journal of alloys and compounds, 2016-11, Vol.686, p.273-280

2016

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Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices

Applied physics letters, 2014-04, Vol.104 (15)

2014

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Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

The Journal of physics and chemistry of solids, 2018-06, Vol.117, p.81-85

2018

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A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS)

Journal of alloys and compounds, 2017-01, Vol.691, p.880-883

2017

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Simple Artificial Neuron Using an Ovonic Threshold Switch Featuring Spike-Frequency Adaptation and Chaotic Activity

Physical review applied, 2020-06, Vol.13 (6), Article 064056

2020

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Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature

Applied physics letters, 2010-03, Vol.96 (13), p.133510-133510-3

2010

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Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Journal of applied physics, 2005-05, Vol.97 (9)

2005

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Thermal conductivity of phase-change material Ge2Sb2Te5

Applied physics letters, 2006-10, Vol.89 (15)

2006

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Suppression of bulk conductivity and large phase relaxation length in topological insulator Bi2-δSnδTe3 epitaxial thin films grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

Journal of alloys and compounds, 2017-11, Vol.723, p.942-947

2017

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The electromagnetic interference shielding effect of indium–zinc oxide/silver alloy multilayered thin films

Thin solid films, 2005, Vol.473 (2), p.315-320

2005

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Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography

Microelectronic engineering, 2007, Vol.84 (1), p.21-24

2007

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A study on the temperature dependence of characteristics of phase change memory devices

Applied physics letters, 2009-08, Vol.95 (9)

2009

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Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

Applied physics letters, 2013-07, Vol.103 (4)

2013

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Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetron

Current Applied Physics, 2010, 10(2), , pp.278-281

2010

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High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD)

Nanoscale, 2015-11, Vol.7 (41), p.17359-17365

2015

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Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline Film

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

Threshold resistive and capacitive switching behavior in binary amorphous GeSe

Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films

Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior

Ovonic threshold switching induced local atomic displacements in amorphous Ge60Se40 film probed via in situ EXAFS under DC electric field

Structural and optical properties of phase-change amorphous and crystalline Ge1 − xTex (0 < x < 1) thin films

Fast and scalable memory characteristics of Ge-doped SbTe phase change materials

A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling

Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization

Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices

Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS)

Simple Artificial Neuron Using an Ovonic Threshold Switch Featuring Spike-Frequency Adaptation and Chaotic Activity

Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature

Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Thermal conductivity of phase-change material Ge2Sb2Te5

Suppression of bulk conductivity and large phase relaxation length in topological insulator Bi2-δSnδTe3 epitaxial thin films grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

The electromagnetic interference shielding effect of indium–zinc oxide/silver alloy multilayered thin films

Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography

A study on the temperature dependence of characteristics of phase change memory devices

Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetron

High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD)

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