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Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

Applied physics letters, 2011-07, Vol.99 (2), p.022104-022104-3

2011

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Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors

IEEE electron device letters, 2013-01, Vol.34 (1), p.63-65

2013

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Self-heating enhanced charge trapping effect for InGaZnO thin film transistor

Applied physics letters, 2012-07, Vol.101 (4), p.42101

2012

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Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

IEEE electron device letters, 2012-07, Vol.33 (7), p.1000-1002

2012

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High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

Applied physics letters, 2013-07, Vol.103 (1)

2013

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Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

IEEE electron device letters, 2013-05, Vol.34 (5), p.638-640

2013

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Systematic Investigations on Self-Heating-Effect-Induced Degradation Behavior in a-InGaZnO Thin-Film Transistors

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3389-3395

2012

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Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors

Applied physics letters, 2012-11, Vol.101 (21)

2012

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NBTI Degradation in LTPS TFTs Under Mechanical Tensile Strain

IEEE electron device letters, 2011-07, Vol.32 (7), p.907-909

2011

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Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Mechanism of a-IGZO TFT device deterioration-illumination light wavelength and substrate temperature effects

Journal of physics. D, Applied physics, 2017-10, Vol.50 (42), p.42

2017

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Effect of N2O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors

Thin solid films, 2011-12, Vol.520 (5), p.1427-1431

2011

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Characterization and Investigation of a Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1681-1688

2013

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Investigation of gate-bias stress and hot-carrier stress-induced instability of InGaZnO thin-film transistors under different environments

Surface & coatings technology, 2013-09, Vol.231, p.478-481

2013

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Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

Applied physics letters, 2010-11, Vol.97 (19)

2010

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Anomalous on-current and subthreshold swing improvement in low-temperature polycrystalline-silicon thin-film transistors under Gate bias stress

Applied physics letters, 2011-03, Vol.98 (12)

2011

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Retraction notice to “Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress” [Thin Solid Films, 528 (2013) 53–56]

Thin solid films, 2018-11, Vol.665, p.195-195

2018

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Anomalous Capacitance Induced by GIDL in P-Channel LTPS TFTs

IEEE electron device letters, 2009-11, Vol.30 (11), p.1179-1181

2009

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Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device

IEEE electron device letters, 2009-08, Vol.30 (8), p.834-836

2009

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Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation

IEEE electron device letters, 2010-12, Vol.31 (12), p.1413-1415

2010

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Charge-Trapping-Induced Parasitic Capacitance and Resistance in SONOS TFTs Under Gate Bias Stress

IEEE electron device letters, 2011-03, Vol.32 (3), p.321-323

2011

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Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer

Surface & coatings technology, 2013-09, Vol.231, p.117-121

2013

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Stability of double gate amorphous In-Ga-Zn-O thin-film transistors with various top gate designs

Japanese Journal of Applied Physics, 2017-12, Vol.56 (12), p.120303

2017

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Review of Present Reliability Challenges in Amorphous In-Ga-Zn-O Thin Film Transistors

ECS journal of solid state science and technology, 2014-01, Vol.3 (9), p.Q3058-Q3070

2014

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Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors

Self-heating enhanced charge trapping effect for InGaZnO thin film transistor

Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

Systematic Investigations on Self-Heating-Effect-Induced Degradation Behavior in a-InGaZnO Thin-Film Transistors

Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors

NBTI Degradation in LTPS TFTs Under Mechanical Tensile Strain

Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor

Mechanism of a-IGZO TFT device deterioration-illumination light wavelength and substrate temperature effects

Effect of N2O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors

Characterization and Investigation of a Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors

Investigation of gate-bias stress and hot-carrier stress-induced instability of InGaZnO thin-film transistors under different environments

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

Anomalous on-current and subthreshold swing improvement in low-temperature polycrystalline-silicon thin-film transistors under Gate bias stress

Retraction notice to “Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress” [Thin Solid Films, 528 (2013) 53–56]

Anomalous Capacitance Induced by GIDL in P-Channel LTPS TFTs

Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device

Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation

Charge-Trapping-Induced Parasitic Capacitance and Resistance in SONOS TFTs Under Gate Bias Stress

Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer

Stability of double gate amorphous In-Ga-Zn-O thin-film transistors with various top gate designs

Review of Present Reliability Challenges in Amorphous In-Ga-Zn-O Thin Film Transistors

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