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Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3658-3664

2015

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Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization

IEEE transactions on microwave theory and techniques, 2004-03, Vol.52 (3), p.908-919

2004

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A 1-17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching networks

IEEE transactions on microwave theory and techniques, 2002-11, Vol.50 (11), p.2564-2568

2002

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K-band HBT and HEMT monolithic active phase shifters using vector sum method

IEEE transactions on microwave theory and techniques, 2004-05, Vol.52 (5), p.1414-1424

2004

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Thermal Modeling of High Power GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013, p.1-4

2013

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50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages

IEEE electron device letters, 2009-08, Vol.30 (8), p.793-795

2009

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Very high efficiency V-band power InP HEMT MMICs

IEEE electron device letters, 2000-11, Vol.21 (11), p.521-523

2000

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Wideband medium power amplifiers using a short gate-length GaAs MMIC process

2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.541-544

2009

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Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology

2011 IEEE MTT-S International Microwave Symposium, 2011, p.1-4

2011

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0.2-μm AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

IEEE transactions on electron devices, 1986-02, Vol.33 (2), p.218-223

1986

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High-performance Ka-band and V-band HEMT low-noise amplifiers

IEEE transactions on microwave theory and techniques, 1988-12, Vol.36 (12), p.1598-1603

1988

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A broadband HBT MMIC IQ modulator and millimeter-wave vector signal characterization

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.1, p.99-102 vol.1

2003

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0.2- \mu AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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0.2-[Formula Omitted] AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition [Formula Omitted] Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744

2013

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0.2- mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al 2 O 3 Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs

IEEE electron device letters, 1989-12, Vol.10 (12), p.580-582

1989

Volltextzugriff (PDF)

Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011, p.1-4

2011

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32-GHz cryogenically cooled HEMT low-noise amplifiers

IEEE transactions on electron devices, 1989-08, Vol.36 (8), p.1528-1535

1989

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A 39-46 GHz MMIC HBT triple-push VCO using cascode configuration

Proceedings. IEEE Asia-Pacific Conference on ASIC, 2002, p.61-64

2002

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An extremely low-noise InP-based HEMT with silicon nitride passivation

Proceedings of 1994 IEEE International Electron Devices Meeting, 1994, p.907-910

1994

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DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

IEEE transactions on electron devices, 1989-03, Vol.36 (3), p.461-473

1989

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Ultra-low-noise cryogenic high-electron-mobility transistors

IEEE transactions on electron devices, 1988-03, Vol.35 (3), p.249-256

1988

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ELECTRICAL PROPERTIES AND FABRICATION TECHNIQUES OF EXTREMELY-SHORT GATE LENGTH GALLIUM-ARSENIDE SINGLE-GATE AND DUAL-GATE MESFET'S

CHAO, PANE-CHANE

1982

Volltextzugriff (PDF)

A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

IEEE electron device letters, 1989-10, Vol.10 (10), p.437-439

1989

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Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization

A 1-17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching networks

K-band HBT and HEMT monolithic active phase shifters using vector sum method

Thermal Modeling of High Power GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages

Very high efficiency V-band power InP HEMT MMICs

Wideband medium power amplifiers using a short gate-length GaAs MMIC process

Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology

0.2-μm AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation

Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

High-performance Ka-band and V-band HEMT low-noise amplifiers

A broadband HBT MMIC IQ modulator and millimeter-wave vector signal characterization

0.2- \mu AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

0.2-[Formula Omitted] AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition [Formula Omitted] Passivation

0.2- mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al 2 O 3 Passivation

Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs

Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs

32-GHz cryogenically cooled HEMT low-noise amplifiers

A 39-46 GHz MMIC HBT triple-push VCO using cascode configuration

An extremely low-noise InP-based HEMT with silicon nitride passivation

DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

Ultra-low-noise cryogenic high-electron-mobility transistors

ELECTRICAL PROPERTIES AND FABRICATION TECHNIQUES OF EXTREMELY-SHORT GATE LENGTH GALLIUM-ARSENIDE SINGLE-GATE AND DUAL-GATE MESFET'S

A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

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