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Non-Volatile Polymer Memory Device Based on a Novel Copolymer of N-Vinylcarbazole and Eu-Complexed Vinylbenzoate

Advanced materials (Weinheim), 2005-02, Vol.17 (4), p.455-459

2005

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A cyclometallated iridium(III) complex as a c-myc G-quadruplex stabilizer and down-regulator of c-myc oncogene expression

Current medicinal chemistry, 2013-02, Vol.20 (4), p.576

2013

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Identification of a natural product-like STAT3 dimerization inhibitor by structure-based virtual screening

Cell death & disease, 2014-06, Vol.5 (6), p.e1293-e1293

2014

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Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material

IEEE electron device letters, 2007-02, Vol.28 (2), p.107-110

2007

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IEEE_Xplore

Simple tandem organic photovoltaic cells for improved energy conversion efficiency

Applied physics letters, 2008-02, Vol.92 (8), p.083310-083310-3

2008

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Efficient multilayer organic solar cells using the optical interference peak

Applied physics letters, 2008-07, Vol.93 (4), p.043307-043307-3

2008

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Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cells

Applied physics letters, 2009-03, Vol.94 (10), p.103305-103305-3

2009

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Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Applied physics letters, 2004-11, Vol.85 (18), p.4127-4129

2004

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Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groups

Organic electronics, 2006-06, Vol.7 (3), p.173-180

2006

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Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Applied physics letters, 2004-05, Vol.84 (19), p.3741-3743

2004

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Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex

IEEE electron device letters, 2006-03, Vol.27 (3), p.154-156

2006

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IEEE_Xplore

Synthesis and memory properties of a conjugated copolymer of fluorene and benzoate with chelated europium complex

Journal of applied physics, 2006-10, Vol.100 (8), p.084508-084508-6

2006

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Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

IEEE electron device letters, 2008-06, Vol.29 (6), p.595-598

2008

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IEEE_Xplore

Reduced carrier backscattering in heterojunction SiGe nanowire channels

Applied physics letters, 2008-12, Vol.93 (25), p.253105-253105-3

2008

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Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell Channel

IEEE electron device letters, 2009-04, Vol.30 (4), p.392-394

2009

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IEEE_Xplore

Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

IEEE electron device letters, 2006-06, Vol.27 (6), p.479-481

2006

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The use of thermal initiator to make organic bulk heterojunction solar cells with a good percolation path

Applied physics letters, 2008-07, Vol.93 (4), p.043304-043304-3

2008

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Work function tuning of metal nitride electrodes for advanced CMOS devices

Thin solid films, 2006-05, Vol.504 (1), p.174-177

2006

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Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2005-08, Vol.87 (7), p.073506-073506-3

2005

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Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process

IEEE electron device letters, 2006-10, Vol.27 (10), p.811-813

2006

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IEEE_Xplore

Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

IEEE electron device letters, 2007-07, Vol.28 (7), p.603-605

2007

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IEEE_Xplore

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

IEEE electron device letters, 2006-10, Vol.27 (10), p.824-826

2006

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IEEE_Xplore

Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics

IEEE transactions on electron devices, , Vol.34 (2), p.286-293

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IEEE_Xplore

Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

Journal of applied physics, 1997-02, Vol.81 (4), p.1992-2001

1997

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Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layer

Chemical physics letters, , Vol.453 (1), p.73-76

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Non-Volatile Polymer Memory Device Based on a Novel Copolymer of N-Vinylcarbazole and Eu-Complexed Vinylbenzoate

A cyclometallated iridium(III) complex as a c-myc G-quadruplex stabilizer and down-regulator of c-myc oncogene expression

Identification of a natural product-like STAT3 dimerization inhibitor by structure-based virtual screening

Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material

Simple tandem organic photovoltaic cells for improved energy conversion efficiency

Efficient multilayer organic solar cells using the optical interference peak

Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cells

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groups

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex

Synthesis and memory properties of a conjugated copolymer of fluorene and benzoate with chelated europium complex

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

Reduced carrier backscattering in heterojunction SiGe nanowire channels

Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell Channel

Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

The use of thermal initiator to make organic bulk heterojunction solar cells with a good percolation path

Work function tuning of metal nitride electrodes for advanced CMOS devices

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process

Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics

Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layer

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