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A cyclometallated iridium(III) complex as a c-myc G-quadruplex stabilizer and down-regulator of c-myc oncogene expression

Current medicinal chemistry, 2013-02, Vol.20 (4), p.576

2013

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Identification of a natural product-like STAT3 dimerization inhibitor by structure-based virtual screening

Cell death & disease, 2014-06, Vol.5 (6), p.e1293-e1293

2014

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Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material

IEEE electron device letters, 2007-02, Vol.28 (2), p.107-110

2007

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Non-Volatile Polymer Memory Device Based on a Novel Copolymer of N-Vinylcarbazole and Eu-Complexed Vinylbenzoate

Advanced materials (Weinheim), 2005-02, Vol.17 (4), p.455-459

2005

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Simple tandem organic photovoltaic cells for improved energy conversion efficiency

Applied physics letters, 2008-02, Vol.92 (8), p.083310-083310-3

2008

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Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groups

Organic electronics, 2006-06, Vol.7 (3), p.173-180

2006

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Efficient multilayer organic solar cells using the optical interference peak

Applied physics letters, 2008-07, Vol.93 (4), p.043307-043307-3

2008

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Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Applied physics letters, 2004-05, Vol.84 (19), p.3741-3743

2004

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Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex

IEEE electron device letters, 2006-03, Vol.27 (3), p.154-156

2006

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Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cells

Applied physics letters, 2009-03, Vol.94 (10), p.103305-103305-3

2009

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Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

IEEE electron device letters, 2008-06, Vol.29 (6), p.595-598

2008

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Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell Channel

IEEE electron device letters, 2009-04, Vol.30 (4), p.392-394

2009

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Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

IEEE electron device letters, 2006-06, Vol.27 (6), p.479-481

2006

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Work function tuning of metal nitride electrodes for advanced CMOS devices

Thin solid films, 2006-05, Vol.504 (1), p.174-177

2006

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Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process

IEEE electron device letters, 2006-10, Vol.27 (10), p.811-813

2006

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Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

IEEE electron device letters, 2007-07, Vol.28 (7), p.603-605

2007

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Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

IEEE electron device letters, 2006-10, Vol.27 (10), p.824-826

2006

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Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics

IEEE transactions on electron devices, 1987-02, Vol.34 (2), p.286-293

1987

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Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

Journal of applied physics, 1997-02, Vol.81 (4), p.1992-2001

1997

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Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layer

Chemical physics letters, 2008-02, Vol.453 (1), p.73-76

2008

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True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films

Applied physics letters, 1993-10, Vol.63 (16), p.2240-2242

1993

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Electronic and optical properties of carbon nitride thin films synthesized by laser ablation under ion beam bombardment

Journal of applied physics, 1998-08, Vol.84 (4), p.2133-2137

1998

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Fermi pinning-induced thermal instability of metal-gate work functions

IEEE electron device letters, 2004-05, Vol.25 (5), p.337-339

2004

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A direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configuration

IEEE transactions on electron devices, 1995-05, Vol.42 (5), p.963-968

1995

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Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Applied physics letters, 2004-11, Vol.85 (18), p.4127-4129

2004

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A cyclometallated iridium(III) complex as a c-myc G-quadruplex stabilizer and down-regulator of c-myc oncogene expression

Identification of a natural product-like STAT3 dimerization inhibitor by structure-based virtual screening

Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material

Non-Volatile Polymer Memory Device Based on a Novel Copolymer of N-Vinylcarbazole and Eu-Complexed Vinylbenzoate

Simple tandem organic photovoltaic cells for improved energy conversion efficiency

Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groups

Efficient multilayer organic solar cells using the optical interference peak

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex

Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cells

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell Channel

Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

Work function tuning of metal nitride electrodes for advanced CMOS devices

Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process

Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics

Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layer

True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films

Electronic and optical properties of carbon nitride thin films synthesized by laser ablation under ion beam bombardment

Fermi pinning-induced thermal instability of metal-gate work functions

A direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configuration

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

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