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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Applied physics letters, 2013-11, Vol.103 (19), p.193507

2013

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Measurement and gate-voltage dependence of channel and series resistances in lateral depletion-mode β-Ga2O3 MOSFETs

Semiconductor science and technology, 2023-07, Vol.38 (7)

2023

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Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire

Applied physics letters, 2021-08, Vol.119 (6)

2021

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High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

IEEE electron device letters, 2010-01, Vol.31 (1), p.2-4

2010

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Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

IEEE electron device letters, 2012-03, Vol.33 (3), p.366-368

2012

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Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

IEEE electron device letters, 2012-08, Vol.33 (8), p.1126-1128

2012

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Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-11, Vol.29 (6)

2011

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Measurement and gate-voltage dependence of channel and series resistances in lateral depletion-mode β-Ga 2 O 3 MOSFETs

Semiconductor science and technology, 2023-07, Vol.38 (7), p.75016

2023

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High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

IEEE electron device letters, 2011-12, Vol.32 (12), p.1677-1679

2011

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Comparison of passivation layers for AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-11, Vol.29 (6)

2011

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Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2018, p.1-3

2018

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High-Power Ka-B and Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

IEEE electron device letters, 2010, Vol.31 (1), p.2-4

2010

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Comparative Study of AlGaN/GaN HEMTs on Free-Standing Diamond and Silicon Substrates for Thermal Effects

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

IEEE electron device letters, 2020-08, Vol.41 (8), p.1181-1184

2020

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Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

IEEE electron device letters, 2010-02, Vol.31 (2), p.99-101

2010

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Quenching and Partitioning–Based Heat Treatment for Rolled Grinding Steel Balls

Metallurgical and materials transactions. A, Physical metallurgy and materials science, 2020-06, Vol.51 (6), p.3042-3053

2020

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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

IEEE electron device letters, 2019-07, Vol.40 (7), p.1056-1059

2019

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Implementation of High-Power-Density X -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

IEEE electron device letters, 2015-10, Vol.36 (10), p.1004-1007

2015

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The R}-V} Relationship in \beta-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation

2023 Device Research Conference (DRC), 2023, p.1-2

2023

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Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-03, Vol.31 (2)

2013

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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

APL materials, 2023-04, Vol.11 (4), p.041102-041102-12

2023

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Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures

Journal of materials research, 2013-07, Vol.28 (13), p.1687-1691

2013

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Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

IEEE electron device letters, 2010-06, Vol.31 (6), p.561-563

2010

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RF Performance of Planar III-V Nanowire-Array Transistors Grown by Vapor-Liquid-Solid Epitaxy

IEEE electron device letters, 2015-05, Vol.36 (5), p.445-447

2015

Volltextzugriff (PDF)

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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Measurement and gate-voltage dependence of channel and series resistances in lateral depletion-mode β-Ga2O3 MOSFETs

Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors

Measurement and gate-voltage dependence of channel and series resistances in lateral depletion-mode β-Ga 2 O 3 MOSFETs

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

Comparison of passivation layers for AlGaN/GaN high electron mobility transistors

Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors

High-Power Ka-B and Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Comparative Study of AlGaN/GaN HEMTs on Free-Standing Diamond and Silicon Substrates for Thermal Effects

RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

Quenching and Partitioning–Based Heat Treatment for Rolled Grinding Steel Balls

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

Implementation of High-Power-Density X -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

The R}-V} Relationship in \beta-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures

Silicon-doped β -Ga2O3 films grown at 1 µ m/h by suboxide molecular-beam epitaxy

Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

RF Performance of Planar III-V Nanowire-Array Transistors Grown by Vapor-Liquid-Solid Epitaxy

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