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IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4049-4054
2023
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IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-5
2023
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IEEE electron device letters, 2012-09, Vol.33 (9), p.1225-1227
2012
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Solid-state electronics, 2022-12, Vol.198, p.108466, Article 108466
2022
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Solid-state electronics, 2022-08, Vol.194, p.108319, Article 108319
2022
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IEEE electron device letters, 2012-11, Vol.33 (11), p.1526-1528
2012
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Transfusion (Philadelphia, Pa.), 2024-07
2024
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IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3142-3148
- Fenouillet-Beranger, C.
- Brunet, L.
- Batude, P.
- Brevard, L.
- Garros, X.
- Casse, M.
- Lacord, J.
- Sklenard, B.
- Acosta-Alba, P.
- Kerdiles, S.
- Tavernier, A.
- Vizioz, C.
- Besson, P.
- Gassilloud, R.
- Pedini, J.-M.
- Kanyandekwe, J.
- Mazen, F.
- Magalhaes-Lucas, A.
- Cavalcante, C.
- Bosch, D.
- Ribotta, M.
- Lapras, V.
- Vinet, M.
- Andrieu, F.
- Arcamone, J.
2021
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IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.4022-4028
2022
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Solid-state electronics, 2022-06, Vol.192, p.108265, Article 108265
2022
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IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4636-4640
2020
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Astronomy and astrophysics (Berlin), 2009-07, Vol.502 (1), p.37-43
2009
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Electronics letters, 2016-11, Vol.52 (23), p.1935-1937
2016
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Solid-state electronics, 2022-07, Vol.193, p.108291, Article 108291
2022
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Solid-state electronics, 2022-06, Vol.192, p.108271, Article 108271
2022
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Geochemistry, geophysics, geosystems : G3, 2024-02, Vol.25 (2), p.n/a
- Seibert, C.
- Feuillet, N.
- Ratzov, G.
- Beck, C.
- Morena, P.
- Johannes, L.
- Ducassou, E.
- Cattaneo, A.
- Goldfinger, C.
- Moreno, E.
- Bieber, A.
- Bénâtre, G.
- Caron, B.
- Caron, M.
- Casse, M.
- Cavailhes, T.
- Del Manzo, G.
- Deschamps, C. E.
- Desiage, P. A.
- Duboc, Q.
- Fauquembergue, K.
- Ferrant, A.
- Guyard, H.
- Jacques, E.
- Laurencin, M.
- Leclerc, F.
- Patton, J.
- Saurel, J. M.
- St‐Onge, G.
- Woerther, P.
2024
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Applied physics letters, 2010-03, Vol.96 (12)
2010
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Physical review. D, 2006-09, Vol.74 (6), Article 063514
2006
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IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3498-3505
2019
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IEEE electron device letters, 2019-05, Vol.40 (5), p.784-787
2019
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Solid-state electronics, 2009-07, Vol.53 (7), p.730-734
- Fenouillet-Beranger, C.
- Denorme, S.
- Perreau, P.
- Buj, C.
- Faynot, O.
- Andrieu, F.
- Tosti, L.
- Barnola, S.
- Salvetat, T.
- Garros, X.
- Cassé, M.
- Allain, F.
- Loubet, N.
- Pham-Nguyen, L.
- Deloffre, E.
- Gros-Jean, M.
- Beneyton, R.
- Laviron, C.
- Marin, M.
- Leyris, C.
- Haendler, S.
- Leverd, F.
- Gouraud, P.
- Scheiblin, P.
- Clement, L.
- Pantel, R.
- Deleonibus, S.
- Skotnicki, T.
2009
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IEEE electron device letters, 2005-05, Vol.26 (5), p.317-319
2005
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.415-416
2022
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Microelectronics and reliability, 2016-08, Vol.63, p.1-10
2016
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Microelectronics and reliability, 2017-12, Vol.79, p.111-118
2017
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