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A silicon metal-oxide-semiconductor electron spin-orbit qubit

Nature communications, 2018-05, Vol.9 (1), p.1768-8, Article 1768

2018

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A silicon singlet-triplet qubit driven by spin-valley coupling

Nature communications, 2022-02, Vol.13 (1), p.641-641, Article 641

2022

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Coherent coupling between a quantum dot and a donor in silicon

Nature communications, 2017-10, Vol.8 (1), p.1029-6, Article 1029

2017

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High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism

Physical review. X, 2018-05, Vol.8 (2), p.021046, Article 021046

2018

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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Physical review letters, 2019-05, Vol.122 (21), p.217702-217702, Article 217702

2019

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Electron spin decoherence in isotope-enriched silicon

Physical review letters, 2010-10, Vol.105 (18), p.187602-187602, Article 187602

2010

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Quantum decoherence of the central spin in a sparse system of dipolar coupled spins

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (3), Article 035452

2012

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GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer

Journal of crystal growth, 2010-04, Vol.312 (8), p.1291-1296

2010

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Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric

Physical review. B, Condensed matter and materials physics, 2012-03, Vol.85 (12), Article 125423

2012

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Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot

Nano letters, 2013-12, Vol.13 (12), p.5785-5790

2013

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Nanoscale interfacial engineering to grow Ge on Si as virtual substrates and subsequent integration of GaAs

Thin solid films, 2010-08, Vol.518 (21), p.5920-5927

2010

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Coherent electron transport by adiabatic passage in an imperfect donor chain

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 155315

2010

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Implications of electronics constraints for solid-state quantum error correction and quantum circuit failure probability

New journal of physics, 2011-08, Vol.13 (8), p.83021

2011

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Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2

Thin solid films, 2011-09, Vol.519 (22), p.7664-7671

2011

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Capacitance Modeling of Complex Topographical Silicon Quantum Dot Structures

IEEE transactions on nanotechnology, 2011-07, Vol.10 (4), p.855-864

2011

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Implantation and activation of high concentrations of boron in Germanium

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2416-2421

2005

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Multiqubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

Physical review. B, Condensed matter and materials physics, 2015-08, Vol.92 (8), Article 081407

2015

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Configuration interaction calculations of the controlled phase gate in double quantum dot qubits

Physical review. B, Condensed matter and materials physics, 2012-01, Vol.85 (3), Article 035319

2012

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Quantifying the Variation in the Number of Donors in Quantum Dots Created Using Atomic Precision Advanced Manufacturing

Journal of physical chemistry. C, 2023-03, Vol.127 (12), p.6071-6079

2023

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Optimized pulses for the control of uncertain qubits

Physical review. A, Atomic, molecular, and optical physics, 2012-05, Vol.85 (5), Article 052313

2012

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Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

Applied physics letters, 2015-05, Vol.106 (20)

2015

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Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision

Physical review applied, 2021-11, Vol.16 (5), Article 054037

2021

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Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-07, Vol.33 (4)

2015

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(Invited) Low-Temperature Growth of Strained Germanium Quantum Wells for High Mobility Applications

ECS transactions, 2020-09, Vol.98 (5), p.215-224

2020

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Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

New journal of physics, 2017-11, Vol.19 (11), p.113023

2017

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A silicon metal-oxide-semiconductor electron spin-orbit qubit

A silicon singlet-triplet qubit driven by spin-valley coupling

Coherent coupling between a quantum dot and a donor in silicon

High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Electron spin decoherence in isotope-enriched silicon

Quantum decoherence of the central spin in a sparse system of dipolar coupled spins

GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer

Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric

Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot

Nanoscale interfacial engineering to grow Ge on Si as virtual substrates and subsequent integration of GaAs

Coherent electron transport by adiabatic passage in an imperfect donor chain

Implications of electronics constraints for solid-state quantum error correction and quantum circuit failure probability

Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2

Capacitance Modeling of Complex Topographical Silicon Quantum Dot Structures

Implantation and activation of high concentrations of boron in Germanium

Multiqubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

Configuration interaction calculations of the controlled phase gate in double quantum dot qubits

Quantifying the Variation in the Number of Donors in Quantum Dots Created Using Atomic Precision Advanced Manufacturing

Optimized pulses for the control of uncertain qubits

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

(Invited) Low-Temperature Growth of Strained Germanium Quantum Wells for High Mobility Applications

Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

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