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Controlled polytypic and twin-plane superlattices in iii-v nanowires

Nature nanotechnology, 2009-01, Vol.4 (1), p.50-55

2009

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0 − π phase transition in hybrid superconductor–InSb nanowire quantum dot devices

Physical review. B, 2017-01, Vol.95 (1), p.014515, Article 014515

2017

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High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

Nanotechnology, 2011-07, Vol.22 (27), p.275602-275602

2011

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Anomalous Zero-Bias Conductance Peak in a Nb–InSb Nanowire–Nb Hybrid Device

Nano letters, 2012-12, Vol.12 (12), p.6414-6419

2012

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Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

Nano letters, 2015-08, Vol.15 (8), p.5580-5584

2015

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Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device

Scientific reports, 2014-12, Vol.4 (1), p.7261-7261, Article 7261

2014

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Diameter Dependence of the Wurtzite−Zinc Blende Transition in InAs Nanowires

Journal of physical chemistry. C, 2010-03, Vol.114 (9), p.3837-3842

2010

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Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction

Nano letters, 2012-01, Vol.12 (1), p.228-233

2012

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Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy

Nano letters, 2019-07, Vol.19 (7), p.4666-4677

2019

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Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Scientific reports, 2016-04, Vol.6 (1), p.24822-24822, Article 24822

2016

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Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover

Physical review. B, Condensed matter and materials physics, 2013-06, Vol.87 (24), Article 241401

2013

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Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

Nanotechnology, 2012-03, Vol.23 (9), p.095702-1-9

2012

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The electrical and structural properties of n-type InAs nanowires grown from metal–organic precursors

Nanotechnology, 2010-05, Vol.21 (20), p.205703-205703

2010

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Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

Nanoscale, 2015-10, Vol.7 (39), p.16266-16272

2015

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Correlation-induced conductance suppression at level degeneracy in a quantum dot

Physical review letters, 2010-05, Vol.104 (18), p.186804-186804, Article 186804

2010

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p‑GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

Nano letters, 2018-09, Vol.18 (9), p.5673-5680

2018

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The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods

Nanoscale, 2018-06, Vol.10 (23), p.11205-11210

2018

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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Applied physics letters, 2010-03, Vol.96 (12), p.121901-121901-3

2010

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High-gain and low-threshold InAs quantum-dot lasers on InP

Applied physics letters, 2005-12, Vol.87 (24), p.243107-243107-3

2005

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The volume and thickness of preprostatic fat on MRIs are not associated with prostate cancer aggressiveness in men undergoing radical prostatectomy

Progrès en urologie (Paris), 2022-04, Vol.32 (5), p.341-353

2022

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InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range

Nanoscale, 2017-09, Vol.9 (36), p.13554-13562

2017

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Lazarevicite-type short-range ordering in ternary III-V nanowires

Physical review. B, 2016-11, Vol.94 (19), Article 195306

2016

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Development of a Vertical Wrap-Gated InAs FET

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3030-3036

2008

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InP-In x Ga 1-x As core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range

Nanoscale, 2017-09, Vol.9 (36), p.13554-13562

2017

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InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.907-914

2011

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Controlled polytypic and twin-plane superlattices in iii-v nanowires

0 − π phase transition in hybrid superconductor–InSb nanowire quantum dot devices

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

Anomalous Zero-Bias Conductance Peak in a Nb–InSb Nanowire–Nb Hybrid Device

Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device

Diameter Dependence of the Wurtzite−Zinc Blende Transition in InAs Nanowires

Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction

Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

The electrical and structural properties of n-type InAs nanowires grown from metal–organic precursors

Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

Correlation-induced conductance suppression at level degeneracy in a quantum dot

p‑GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

High-gain and low-threshold InAs quantum-dot lasers on InP

The volume and thickness of preprostatic fat on MRIs are not associated with prostate cancer aggressiveness in men undergoing radical prostatectomy

InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range

Lazarevicite-type short-range ordering in ternary III-V nanowires

Development of a Vertical Wrap-Gated InAs FET

InP-In x Ga 1-x As core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

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