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Characterization of oxide layers on GaAs substrates

Thin solid films, 2000-03, Vol.364 (1-2), p.33-39

2000

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Structural variations in polysilicon, associated with deposition temperature and degree of anneal

Journal of materials science, 2001, Vol.36 (1), p.207-212

2001

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Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror

IEEE photonics technology letters, 1998-12, Vol.10 (12), p.1775-1777

1998

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Spectroscopic ellipsometry characterization of strained and relaxed Si1-xGex epitaxial layers

Journal of applied physics, 1993, Vol.73 (1), p.239-250

1993

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Spectroscopic ellipsometry of epitaxial Si {100} surfaces

Applied physics letters, 1992-09, Vol.61 (11), p.1304-1306

1992

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In situ optical monitoring for SiGe epitaxy

Journal of crystal growth, 2000-02, Vol.209 (2), p.290-296

2000

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Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors

Thin solid films, 1998-02, Vol.313 (1-2), p.579-582

1998

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The surface roughness and optical properties of high quality Si epitaxial layers

Thin solid films, 1993-10, Vol.233 (1), p.40-45

1993

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A simplified self-consistent model of charge control in quasi-square quantum well HFETs

Semiconductor science and technology, 1991-12, Vol.6 (12), p.1151-1157

1991

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Photoreflectance of strained Si1-xGex epilayers (0.07≤x≤0.26) and comparison with spectroscopic ellipsometry

Applied surface science, 1994-12, Vol.81 (4), p.475-483

1994

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SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry

Thin solid films, 1992-12, Vol.222 (1), p.73-77

1992

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Real-time monitoring of Si1-xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry

Physica status solidi. A, Applied research, 1995-11, Vol.152 (1), p.95-102

1995

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In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structures

Thin solid films, 1993-10, Vol.233 (1), p.126-130

1993

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Observation of graded interfaces in strained Si/Si1-xGex layers (0.17 < x < 0.23) using photoreflectance

Applied surface science, 1998, Vol.125 (1), p.1-5

1998

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Long-wavelength SiGe/Si resonant cavity infrared detector using a bonded silicon-on-oxide reflector

Applied physics letters, 1996-01, Vol.68 (4), p.544-546

1996

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Dielectric functions and critical points of strained InxGa1-xAs on GaAs

Applied physics letters, 1992-05, Vol.60 (19), p.2412-2414

1992

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Non-destructive characterization of III–V alloy multilayer structures using spectroscopic ellipsometry

Thin solid films, 1993-10, Vol.233 (1), p.171-175

1993

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Photoreflectance spectroscopy of pseudomorphic Si1-xGex (100) structures (x<0.26)

Materials science and technology, 1995, Vol.11 (4), p.416-420

1995

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Photoreflectance spectroscopy of pseudomorphic Si1−XGex (100) structures (x<0·26)

Materials science and technology, 1995-04, Vol.11 (4), p.416-420

1995

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Nondestructive characterization of III-V alloy multilayer structures using spectroscopic ellipsometry

Thin solid films, 1993-10, Vol.233 (1-2), p.171-175

1993

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Novel pseudomorphic InGaAs/AlGaAs SISFET and HIGFET structures for direct coupled FET logic

Electronics letters, 1991-01, Vol.27 (18), p.1617-1619

1991

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Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

Optics letters, 2002-02, Vol.27 (4), p.219

2002

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Observation of graded interfaces in strained Si/Si 1−x Ge x layers (0.17 < x < 0.23) using photoreflectance

Applied surface science, 1998-01, Vol.125 (1), p.1-5

1998

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Dielectric function spectra of strained and relaxed Si1− x Ge x alloys ( x =0–0.25)

Journal of applied physics, 1994-05, Vol.75 (9), p.4642-4647

1994

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Spectroscopic ellipsometry of Si1-xGex multi-quantum wells

Superlattices and microstructures, 1993-09, Vol.14 (2-3), p.157-165

1993

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Characterization of oxide layers on GaAs substrates

Structural variations in polysilicon, associated with deposition temperature and degree of anneal

Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror

Spectroscopic ellipsometry characterization of strained and relaxed Si1-xGex epitaxial layers

Spectroscopic ellipsometry of epitaxial Si {100} surfaces

In situ optical monitoring for SiGe epitaxy

Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors

The surface roughness and optical properties of high quality Si epitaxial layers

A simplified self-consistent model of charge control in quasi-square quantum well HFETs

Photoreflectance of strained Si1-xGex epilayers (0.07≤x≤0.26) and comparison with spectroscopic ellipsometry

SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry

Real-time monitoring of Si1-xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry

In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structures

Observation of graded interfaces in strained Si/Si1-xGex layers (0.17 < x < 0.23) using photoreflectance

Long-wavelength SiGe/Si resonant cavity infrared detector using a bonded silicon-on-oxide reflector

Dielectric functions and critical points of strained InxGa1-xAs on GaAs

Non-destructive characterization of III–V alloy multilayer structures using spectroscopic ellipsometry

Photoreflectance spectroscopy of pseudomorphic Si1-xGex (100) structures (x<0.26)

Photoreflectance spectroscopy of pseudomorphic Si1−XGex (100) structures (x<0·26)

Nondestructive characterization of III-V alloy multilayer structures using spectroscopic ellipsometry

Novel pseudomorphic InGaAs/AlGaAs SISFET and HIGFET structures for direct coupled FET logic

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

Observation of graded interfaces in strained Si/Si 1−x Ge x layers (0.17 < x < 0.23) using photoreflectance

Dielectric function spectra of strained and relaxed Si1− x Ge x alloys ( x =0–0.25)

Spectroscopic ellipsometry of Si1-xGex multi-quantum wells

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