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A monolithic three-terminal GaInAsP/GaInAs tandem solar cell

Progress in photovoltaics, 2009-12, Vol.17 (8), p.587-593

2009

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Effects of deposition termination on Cu2ZnSnSe4 device characteristics

Thin solid films, 2015-05, Vol.582 (C), p.184-187

2015

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Fiber-fed time-resolved photoluminescence for reduced process feedback time on thin-film photovoltaics

Review of scientific instruments, 2015-01, Vol.86 (1)

2015

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Two-terminal metal-inter-connected multijunction III-V solar cells

Progress in photovoltaics, 2015-05, Vol.23 (5), p.593-599

2015

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Metal Pillar Interconnection Topology for Bonded Two-Terminal Multijunction III-V Solar Cells

IEEE journal of photovoltaics, 2013-04, Vol.3 (2), p.868-872

2013

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Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP

Solar energy materials and solar cells, 2007-06, Vol.91 (10), p.908-918

2007

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A Standards-Based Method to Determine Elemental Compositions using Energy Dispersive X-Ray Spectrometry for Compound Semiconductors

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.1046-1047

2012

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A Standards-Based Method for Compositional Analysis by Energy Dispersive X-Ray Spectrometry Using Multivariate Statistical Analysis: Application to Multicomponent Alloys

Microscopy and microanalysis, 2013-02, Vol.19 (1), p.66-72

2013

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Auger recombination in low-band-gap n -type InGaAs

Applied physics letters, 2001-11, Vol.79 (20), p.3272-3274

2001

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Progress toward an advanced four-subcell inverted metamorphic multi-junction (IMM) solar cell

Progress in photovoltaics, 2016-02, Vol.24 (2), p.139-149

2016

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Deposition of device quality, low H content amorphous silicon

Journal of applied physics, 1991-05, Vol.69 (9), p.6728-6730

1991

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Indications of short minority-carrier lifetime in kesterite solar cells

Journal of applied physics, 2013-08, Vol.114 (8)

2013

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Characterization survey of GaxIn1-xAs/InAsyP1-y double heterostructures and InAsyP1-y multilayers grown on InP

Journal of electronic materials, 2004-03, Vol.33 (3), p.185-193

2004

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2.0-2.1 eV GaxIn1−xP solar cells grown on relaxed GaAsP step grades

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002111-002116

2010

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Structure and composition of lattice-mismatched III-V epilayers for high-efficiency photovoltaics

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002097-002101

2010

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Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005, 2005, p.530-535

2005

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Effective electron mass and plasma filter characterization of n -type InGaAs and InAsP

Journal of applied physics, 2002-10, Vol.92 (7), p.3524-3529

2002

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Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substrates

Applied physics letters, 2001-02, Vol.78 (8), p.1092-1094

2001

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Metal Pillar Interconnection Topology for Bonded Two-Terminal Multijunction III–V Solar Cells

IEEE journal of photovoltaics, 2013-04, Vol.3 (2)

2013

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Syntactic–semantic interface in the acquisition of verb morphology

Journal of child language, 2004-02, Vol.31 (1), p.31-60

2004

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Fabrication of two-terminal metal-interconnected multijunction III-V solar cells

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.000944-000948

2012

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Compositional and structural characterization by TEM of lattice-mismatched III-V epilayers

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.000449-000451

2011

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Two-terminal metal-inter-connected multijunction III-V solar cells: Two-terminal metal-interconnected multijunction III-V solar cells

Progress in photovoltaics, 2014-02, Vol.23 (5)

2014

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Erratum: Auger recombination in low-band-gap n -type InGaAs [Appl. Phys. Lett. 79 , 3272 (2001)]

Applied physics letters, 2003-11, Vol.83 (19), p.4062-4062

2003

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Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells

2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.729-732

2006

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A monolithic three-terminal GaInAsP/GaInAs tandem solar cell

Effects of deposition termination on Cu2ZnSnSe4 device characteristics

Fiber-fed time-resolved photoluminescence for reduced process feedback time on thin-film photovoltaics

Two-terminal metal-inter-connected multijunction III-V solar cells

Metal Pillar Interconnection Topology for Bonded Two-Terminal Multijunction III-V Solar Cells

Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP

A Standards-Based Method to Determine Elemental Compositions using Energy Dispersive X-Ray Spectrometry for Compound Semiconductors

A Standards-Based Method for Compositional Analysis by Energy Dispersive X-Ray Spectrometry Using Multivariate Statistical Analysis: Application to Multicomponent Alloys

Auger recombination in low-band-gap n -type InGaAs

Progress toward an advanced four-subcell inverted metamorphic multi-junction (IMM) solar cell

Deposition of device quality, low H content amorphous silicon

Indications of short minority-carrier lifetime in kesterite solar cells

Characterization survey of GaxIn1-xAs/InAsyP1-y double heterostructures and InAsyP1-y multilayers grown on InP

2.0-2.1 eV GaxIn1−xP solar cells grown on relaxed GaAsP step grades

Structure and composition of lattice-mismatched III-V epilayers for high-efficiency photovoltaics

Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters

Effective electron mass and plasma filter characterization of n -type InGaAs and InAsP

Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substrates

Metal Pillar Interconnection Topology for Bonded Two-Terminal Multijunction III–V Solar Cells

Syntactic–semantic interface in the acquisition of verb morphology

Fabrication of two-terminal metal-interconnected multijunction III-V solar cells

Compositional and structural characterization by TEM of lattice-mismatched III-V epilayers

Two-terminal metal-inter-connected multijunction III-V solar cells: Two-terminal metal-interconnected multijunction III-V solar cells

Erratum: Auger recombination in low-band-gap n -type InGaAs [Appl. Phys. Lett. 79 , 3272 (2001)]

Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells

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