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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD

Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47

2001

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(0 0 0) and (0 1 0) energy levels of the HD 18O and D 2 18 O molecules from analysis of their ν 2 bands

Journal of molecular spectroscopy, 2011, Vol.265 (1), p.26-38

2011

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a 0 0 (980)-ƒ 0(980) mixing and spin asymmetry in the π− p→ηπ 0 n reaction

JETP letters, 2004-06, Vol.79 (12), p.588-592

2004

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THE 0–0 AND 1–0 BANDS OF THE A ( 3 Π i )– X ( 3 Σ − ) SYSTEM OF NH

Canadian journal of physics, 1959-10, Vol.37 (10), p.1171-1186

Dixon, R. N.

1959

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0 + → 0 − beta decay of C 16

Physical review. C, Nuclear physics, 1983-03, Vol.27 (3), p.1353-1355

1983

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0,0'-DIPHENYLENEPHENYLOXONIUM SALTS

Selected Works in Organic Chemistry, 1963

Nesmeyanov, A. N

1963

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A 0.002‐mm 2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)

IET circuits, devices & systems, 2021-11, Vol.15 (8), p.738-744

2021

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A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)

IET circuits, devices & systems, 2021-11, Vol.15 (8), p.738-744

2021

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A 0.0052 mm 2 COMPACT DIGITAL PLL IN 65 nm CMOS

Journal of circuits, systems, and computers, 2012-12, Vol.21 (8), p.1240026

2012

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A 0.007-mm2 108- /^ 1-MHz Relaxation Oscillator for High-Temperature Applications up to 180 ^ in 0.13- \mu CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2013-07, Vol.60 (7), p.1692-1701

2013

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A 0.01%THD, 70dB PSRR Single Ended Class D using variable hysteresis control for headphone amplifiers

2009 IEEE International Symposium on Circuits and Systems (ISCAS), 2009, p.1181-1184

2009

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0.012 mm 2 800 µW 0.1–6.4 GHz multi‐protocol PLL with 14 ps rms integrated jitter in 28 nm FD‐SOI

Electronics letters, 2016-09, Vol.52 (18), p.1518-1520

2016

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0.012 mm super(2) 800 mu W 0.1-6.4 GHz multi-protocol PLL with 14 ps sub(rms) integrated jitter in 28 nm FD-SOI

Electronics letters, 2016-09, Vol.52 (18), p.1518-1520

2016

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0.012 mm2 800 µW 0.1–6.4 GHz multi-protocol PLL with 14 psrms integrated jitter in 28 nm FD-SOI

Electronics letters, 2016-09, Vol.52 (18), p.1518-1520

2016

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A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.64-65

2011

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A 0.025-0.45 W 60%-Efficiency Inductive-Coupling Power Transceiver With 5-Bit Dual-Frequency Feedforward Control for Non-Contact Memory Cards

IEEE journal of solid-state circuits, 2012-10, Vol.47 (10), p.2496-2504

2012

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0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications

2014 IEEE International Electron Devices Meeting, 2014, p.19.4.1-19.4.4

2014

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0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

2002 32nd European Microwave Conference, 2002, p.1-4

2002

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A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

2010 International Electron Devices Meeting, 2010, p.27.5.1-27.5.4

2010

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0.04?4.0 Mev neutron fission cross section of Pu240

Atomic energy (New York, N.Y.), 1961-07, Vol.9 (1), p.511-515

1961

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0.040 rad(Si)/s total dose testing of Renesas parts proposed for the Europa Clipper mission

2019 IEEE Radiation Effects Data Workshop, 2019, p.1-8

2019

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0.05 mu m (3 sigma ) overlay accuracy through-the-lens alignment in an excimer laser lithography system

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (12B), p.4161-4166

1992

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A 0.05 /spl mu/m-CMOS with ultra shallow source/drain junctions fabricated by 5 keV ion implantation and rapid thermal annealing

Proceedings of 1994 IEEE International Electron Devices Meeting, 1994, p.485-488

1994

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0.05 μm (3σ) overlay accuracy through-the-lens alignment in an excimer laser lithography system: MicroProcess

Japanese journal of applied physics, 1992, Vol.31 (12B), p.4161-4166

1992

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A 0.059-mm2 10.8-mW local oscillator for GSM systems in 65-nm CMOS

2009 Proceedings of ESSCIRC, 2009, p.444-447

2009

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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD

(0 0 0) and (0 1 0) energy levels of the HD 18O and D 2 18 O molecules from analysis of their ν 2 bands

a 0 0 (980)-ƒ 0(980) mixing and spin asymmetry in the π− p→ηπ 0 n reaction

THE 0–0 AND 1–0 BANDS OF THE A ( 3 Π i )– X ( 3 Σ − ) SYSTEM OF NH

0 + → 0 − beta decay of C 16

0,0'-DIPHENYLENEPHENYLOXONIUM SALTS

A 0.002‐mm 2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)

A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)

A 0.0052 mm 2 COMPACT DIGITAL PLL IN 65 nm CMOS

A 0.007-mm2 108- /^ 1-MHz Relaxation Oscillator for High-Temperature Applications up to 180 ^ in 0.13- \mu CMOS

A 0.01%THD, 70dB PSRR Single Ended Class D using variable hysteresis control for headphone amplifiers

0.012 mm 2 800 µW 0.1–6.4 GHz multi‐protocol PLL with 14 ps rms integrated jitter in 28 nm FD‐SOI

0.012 mm super(2) 800 mu W 0.1-6.4 GHz multi-protocol PLL with 14 ps sub(rms) integrated jitter in 28 nm FD-SOI

0.012 mm2 800 µW 0.1–6.4 GHz multi-protocol PLL with 14 psrms integrated jitter in 28 nm FD-SOI

A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

A 0.025-0.45 W 60%-Efficiency Inductive-Coupling Power Transceiver With 5-Bit Dual-Frequency Feedforward Control for Non-Contact Memory Cards

0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications

0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

0.04?4.0 Mev neutron fission cross section of Pu240

0.040 rad(Si)/s total dose testing of Renesas parts proposed for the Europa Clipper mission

0.05 mu m (3 sigma ) overlay accuracy through-the-lens alignment in an excimer laser lithography system

A 0.05 /spl mu/m-CMOS with ultra shallow source/drain junctions fabricated by 5 keV ion implantation and rapid thermal annealing

0.05 μm (3σ) overlay accuracy through-the-lens alignment in an excimer laser lithography system: MicroProcess

A 0.059-mm2 10.8-mW local oscillator for GSM systems in 65-nm CMOS

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