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A 0.25-V Rail-to-Rail Three-Stage OTA With an Enhanced DC Gain

IEEE transactions on circuits and systems. II, Express briefs, 2020-07, Vol.67 (7), p.1179-1183

2020

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AoCStream: All-on-Chip CNN Accelerator with Stream-Based Line-Buffer Architecture and Accelerator-Aware Pruning

Sensors (Basel, Switzerland), 2023-09, Vol.23 (19), p.8104

2023

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250-mV Supply Subthreshold CMOS Voltage Reference Using a Low-Voltage Comparator and a Charge-Pump Circuit

IEEE transactions on circuits and systems. II, Express briefs, 2014-11, Vol.61 (11), p.850-854

Yang, Byung-Do

2014

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Low-Power and Area-Efficient Shift Register Using Pulsed Latches

IEEE transactions on circuits and systems. I, Regular papers, 2015-06, Vol.62 (6), p.1564-1571

Yang, Byung-Do

2015

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High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory

Advanced functional materials, 2012-07, Vol.22 (14), p.2915-2926

2012

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Trench Gate Nanosheet FET to Suppress Leakage Current From Substrate Parasitic Channel

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-5

2023

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Low-Power Effective Memory-Size Expanded TCAM Using Data-Relocation Scheme

IEEE journal of solid-state circuits, 2015-10, Vol.50 (10), p.2441-2450

Yang, Byung-Do

2015

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A 0.35V 90nA Quiescent Current Output-Capacitor-Less NMOS Low-Dropout Regulator Using a Coarse-Fine Charge-Pump Circuit

IEEE transactions on circuits and systems. II, Express briefs, 2020-12, Vol.67 (12), p.3118-3122

2020

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Low-Area TCAM Using A Don't Care Reduction Scheme

IEEE journal of solid-state circuits, 2018-08, Vol.53 (8), p.2427-2433

2018

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Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

Materials, 2022-03, Vol.15 (5), p.1960

2022

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5‐T and 6‐T thermometer‐code latches for thermometer‐code shift‐register

ETRI Journal, 2021, 43(5), , pp.900-908

2021

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Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory

Results in physics, 2020-09, Vol.18, p.103275, Article 103275

2020

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Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering

IEEE access, 2020-01, Vol.8, p.1-1

2020

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Low‐ripple coarse‐fine digital low‐dropout regulator without ringing in the transient state

ETRI Journal, 2020, 42(5), , pp.793-801

2020

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Low-Area and Low-Power Latch-Based Thermometer-Code Shift-Register

IEEE transactions on circuits and systems. II, Express briefs, 2020-10, Vol.67 (10), p.2119-2123

2020

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DC-DC Buck Converter Using Analog Coarse-Fine Self-Tracking Zero-Current Detection Scheme

IEEE transactions on circuits and systems. II, Express briefs, 2019-11, Vol.66 (11), p.1850-1854

2019

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Area-Efficient Bidirectional Shift-Register Using Bidirectional Pulsed-Latches

IEEE transactions on circuits and systems. II, Express briefs, 2019-08, Vol.66 (8), p.1386-1390

2019

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A Low-Power SRAM Using Bit-Line Charge-Recycling for Read and Write Operations

IEEE journal of solid-state circuits, 2010-10, Vol.45 (10), p.2173-2183

YANG, Byung-Do

2010

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Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers

Micromachines (Basel), 2022-09, Vol.13 (9), p.1498

2022

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A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

ETRI journal, 2013-08, Vol.35 (4), p.610-616

Yang, Byung-Do

2013

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Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors

IEEE electron device letters, 2013-01, Vol.34 (1), p.126-128

2013

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Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures

Coatings (Basel), 2021-04, Vol.11 (4), p.451

2021

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A Digital Low-dropout Regulator with A Voltage Differential Detector for Removing Transient Oscillation

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19(5), 89, pp.492-497

2019

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A low-power SRAM using hierarchical bit line and local sense amplifiers

IEEE journal of solid-state circuits, 2005-06, Vol.40 (6), p.1366-1376

2005

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Low‐Complexity Multi‐size Cyclic‐Shifter for QC‐LDPC Codes

ETRI Journal, 2017, 39(3), , pp.319-325

2017

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A 0.25-V Rail-to-Rail Three-Stage OTA With an Enhanced DC Gain

AoCStream: All-on-Chip CNN Accelerator with Stream-Based Line-Buffer Architecture and Accelerator-Aware Pruning

250-mV Supply Subthreshold CMOS Voltage Reference Using a Low-Voltage Comparator and a Charge-Pump Circuit

Low-Power and Area-Efficient Shift Register Using Pulsed Latches

High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory

Trench Gate Nanosheet FET to Suppress Leakage Current From Substrate Parasitic Channel

Low-Power Effective Memory-Size Expanded TCAM Using Data-Relocation Scheme

A 0.35V 90nA Quiescent Current Output-Capacitor-Less NMOS Low-Dropout Regulator Using a Coarse-Fine Charge-Pump Circuit

Low-Area TCAM Using A Don't Care Reduction Scheme

Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

5‐T and 6‐T thermometer‐code latches for thermometer‐code shift‐register

Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory

Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering

Low‐ripple coarse‐fine digital low‐dropout regulator without ringing in the transient state

Low-Area and Low-Power Latch-Based Thermometer-Code Shift-Register

DC-DC Buck Converter Using Analog Coarse-Fine Self-Tracking Zero-Current Detection Scheme

Area-Efficient Bidirectional Shift-Register Using Bidirectional Pulsed-Latches

A Low-Power SRAM Using Bit-Line Charge-Recycling for Read and Write Operations

Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers

A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors

Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures

A Digital Low-dropout Regulator with A Voltage Differential Detector for Removing Transient Oscillation

A low-power SRAM using hierarchical bit line and local sense amplifiers

Low‐Complexity Multi‐size Cyclic‐Shifter for QC‐LDPC Codes

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