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Organic wrinkles for energy efficient organic light emitting diodes

Organic electronics, 2015-11, Vol.26, p.273-278

2015

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Direct formation of random wrinkle on emission surface for improved light out coupling and stable angular spectrum of white organic light emitting diodes

Journal of luminescence, 2019-01, Vol.205, p.66-71

2019

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Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes

Scientific reports, 2015-12, Vol.5 (1), p.17748-17748, Article 17748

2015

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Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

Thin solid films, 2008-11, Vol.517 (2), p.848-852

2008

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Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications

IEEE electron device letters, 2009-04, Vol.30 (4), p.371-373

2009

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A Low Power Phase-Change Random Access Memory using a Data-Comparison Write Scheme

2007 IEEE International Symposium on Circuits and Systems (ISCAS), 2007, p.3014-3017

2007

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Sb-Se-based phase-change memory device with lower power and higher speed operations

IEEE electron device letters, 2006-06, Vol.27 (6), p.445-447

2006

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Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Semiconductor science and technology, 2011-03, Vol.26 (3), p.034007

2011

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Flexible integrated OLED substrates prepared by printing and plating process

Organic electronics, 2017-11, Vol.50, p.170-176

2017

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The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Thin solid films, 2008-10, Vol.516 (23), p.8810-8812

2008

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Organic wrinkles embedded in high-index medium as planar internal scattering structures for organic light-emitting diodes

Organic electronics, 2017-07, Vol.46, p.139-144

2017

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Polycrystalline silicon-germanium heating layer for phase-change memory applications

Applied physics letters, 2006-07, Vol.89 (5)

2006

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Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate

Current applied physics, 2011-05, Vol.11 (3), p.S219-S224

2011

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Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film

Journal of colloid and interface science, 2008-10, Vol.326 (1), p.186-190

2008

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Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film

Journal of applied physics, 1999-09, Vol.86 (5), p.2700-2711

1999

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The improvement of mechanical and dielectric properties of ordered mesoporous silica film using TEOS–MTES mixed silica precursor

Ceramics international, 2008-05, Vol.34 (4), p.947-951

2008

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Highly efficient green, blue, and white phosphorescent inverted organic light-emitting diodes by improving charge injection and balance

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (38), p.9911-9919

2017

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Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.721-724

2006

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Improvement of uncooled infrared imaging detector by using mesoporous silica as a thermal isolation layer

Ceramics international, 2008-05, Vol.34 (4), p.833-836

2008

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Bilayer Heater Electrode for Improving Reliability of Phase-Change Memory Devices

Journal of the Electrochemical Society, 2008, Vol.155 (5), p.H314

2008

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Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications

Japanese Journal of Applied Physics, 2009-09, Vol.48 (9), p.9

2009

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Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications

Microelectronic engineering, 2008-12, Vol.85 (12), p.2342-2345

2008

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Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-09, Vol.24 (5), p.2312-2316

2006

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Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

Japanese Journal of Applied Physics, 2007-11, Vol.46 (11R), p.7225

2007

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Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Applied surface science, 2007-10, Vol.254 (1), p.316-320

2007

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Organic wrinkles for energy efficient organic light emitting diodes

Direct formation of random wrinkle on emission surface for improved light out coupling and stable angular spectrum of white organic light emitting diodes

Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes

Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications

A Low Power Phase-Change Random Access Memory using a Data-Comparison Write Scheme

Sb-Se-based phase-change memory device with lower power and higher speed operations

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Flexible integrated OLED substrates prepared by printing and plating process

The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Organic wrinkles embedded in high-index medium as planar internal scattering structures for organic light-emitting diodes

Polycrystalline silicon-germanium heating layer for phase-change memory applications

Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate

Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film

Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film

The improvement of mechanical and dielectric properties of ordered mesoporous silica film using TEOS–MTES mixed silica precursor

Highly efficient green, blue, and white phosphorescent inverted organic light-emitting diodes by improving charge injection and balance

Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Improvement of uncooled infrared imaging detector by using mesoporous silica as a thermal isolation layer

Bilayer Heater Electrode for Improving Reliability of Phase-Change Memory Devices

Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications

Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications

Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications

Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

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