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A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications
2017 Symposium on VLSI Circuits, 2017, p.C194-C195
2017
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A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage
IEEE journal of solid-state circuits, 2021-04, Vol.56 (4), p.1129-1140
2021
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A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems
2020 IEEE Symposium on VLSI Circuits, 2020, p.1-2
2020
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A 1.8 V 1 Gb NAND flash memory with 0.12 /spl mu/m STI process technology
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.1, p.104-450 vol.1
2002
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A 1.8 V 1 Gb NAND flash memory with 0.12 mu m STI process technology
Digest of technical papers - IEEE International Solid-State Circuits Conference, 2002-01, p.80-81+410
2002
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A 1.8 V 2 Gb NAND flash memory for mass storage applications
2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC, 2003, p.290-494 vol.1
2003
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A 1.8V 1Gb NAND flash memory with 0.12/spl mu/m STI process technology
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.80-410
2002
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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory
2017 IEEE International Solid-State Circuits Conference (ISSCC), 2017, p.202-203
2017
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A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
IEEE journal of solid-state circuits, 2016-01, Vol.51 (1), p.204-212
2016
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13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate
2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.218-220
2020
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13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface
2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.216-218
2019
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19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming
2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014, p.334-335
2014
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A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput
2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.340-342
2018
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256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
IEEE journal of solid-state circuits, 2017-01, Vol.52 (1), p.210-217
2017
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A 3.3 V 4 Gb four-level NAND flash memory with 90 nm CMOS technology
2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.52-513 Vol.1
2004
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A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technology
First edition, 2004
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30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface
2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, Vol.64, p.426-428
2021
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A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory
IEEE journal of solid-state circuits, 2018-01, Vol.53 (1), p.124-133
2018
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7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers
2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, p.130-131
2016
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7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate
2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3
2015
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7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate
2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, p.138-139
2016
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7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip
2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3
2015
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An 8 Gb multi-level NAND flash memory with 63 nm STI CMOS process technology
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005, 2005, p.46-47 Vol. 1
2005
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A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications
IEEE journal of solid-state circuits, 2003-11, Vol.38 (11), p.1934-1942
2003
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Analytical solution of the breakdown voltage for 6 H -silicon carbide p + n junction
Journal of applied physics, 1996-03, Vol.79 (5), p.2796-2797
1996
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