UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Evaluation of energy-saving effect during the installing process of automated heating stations in educational institutions

IOP conference series. Materials Science and Engineering, 2019-06, Vol.552 (1), p.12019

2019

Volltextzugriff (PDF)

Methods and Devices of Heat Wasted Gases Utilization from Stationary Engines of Internal Combustion

Journal of physics. Conference series, 2018-08, Vol.1066 (1), p.12018

2018

Volltextzugriff (PDF)

Analysis of the unsteady temperature condition of a building during non-working hours when heating load is decreased

IOP conference series. Materials Science and Engineering, 2020-03, Vol.791 (1), p.12047

2020

Volltextzugriff (PDF)

Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1698-1705

2005

Volltextzugriff (PDF)

Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

Journal of applied physics, 2005-06, Vol.97 (12), p.123714-123714-7

2005

Volltextzugriff (PDF)

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Journal of applied physics, 2011-04, Vol.109 (8), p.086106-086106-3

2011

Volltextzugriff (PDF)

Thermal analysis of submicron nanocrystalline diamond films

Diamond and related materials, 2013-11, Vol.40, p.69-74

2013

Volltextzugriff (PDF)

Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

Journal of applied physics, 2007-03, Vol.101 (5), p.054508-054508-6

2007

Volltextzugriff (PDF)

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2194-2199

2012

Volltextzugriff (PDF)

Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP

IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.411-418

2011

Volltextzugriff (PDF)

Current conduction and saturation mechanism in AlGaN∕GaN ungated structures

Journal of applied physics, 2006-06, Vol.99 (12), p.123720-1-7

2006

Volltextzugriff (PDF)

Application of transient interferometric mapping method for ESD and latch-up analysis

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1592-1596

2011

Volltextzugriff (PDF)

Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices

IEEE transactions on instrumentation and measurement, 2005-12, Vol.54 (6), p.2438-2445

2005

Volltextzugriff (PDF)

Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.2070-2079

2002

Volltextzugriff (PDF)

Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1346-1351

2009

Volltextzugriff (PDF)

Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1427-1430

2010

Volltextzugriff (PDF)

Dynamics of integrated vertical DMOS transistors under 100-ns TLP stress

IEEE transactions on electron devices, 2005-05, Vol.52 (5), p.1008-1013

2005

Volltextzugriff (PDF)

Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique

Applied physics letters, 2002-10, Vol.81 (15), p.2881-2883

2002

Volltextzugriff (PDF)

Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry

IEEE electron device letters, 2002-10, Vol.23 (10), p.606-608

2002

Volltextzugriff (PDF)

Backside interferometric methods for localization of ESD-induced leakage current and metal shorts

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1539-1544

2007

Volltextzugriff (PDF)

A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique

IEEE electron device letters, 2005-12, Vol.26 (12), p.916-918

2005

Volltextzugriff (PDF)

Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1649-1652

2007

Volltextzugriff (PDF)

Thermally-driven motion of current filaments in ESD protection devices

Solid-state electronics, 2005-03, Vol.49 (3), p.421-429

2005

Volltextzugriff (PDF)

Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1450-1455

2007

Volltextzugriff (PDF)

Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

Solid-state electronics, 2007-06, Vol.51 (6), p.969-974

2007

Volltextzugriff (PDF)

1 – 25 von 105

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(72)
Mit Volltextzugriff
(83)

Publikationsform

Sprache

Englisch
(86)
Russisch
(18)

Erscheinungsjahr

n.n

Thema

Science & Technology
(54)
Technology
(45)
Engineering
(44)
Engineering, Electrical & Electronic
(43)
Physical Sciences
(40)
Physics
(40)
Physics, Applied
(36)
Exact Sciences And Technology
(24)
Electronics
(23)
Applied Sciences
(22)
Electrostatic Discharge
(22)
Science & Technology - Other Topics
(18)
Nanoscience & Nanotechnology
(17)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(16)
Devices
(14)
Protection
(14)
Humans
(13)
Electrostatic Interference
(12)
Transistors
(11)
Electrostatic Discharges
(9)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Evaluation of energy-saving effect during the installing process of automated heating stations in educational institutions

Methods and Devices of Heat Wasted Gases Utilization from Stationary Engines of Internal Combustion

Analysis of the unsteady temperature condition of a building during non-working hours when heating load is decreased

Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Thermal analysis of submicron nanocrystalline diamond films

Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP

Current conduction and saturation mechanism in AlGaN∕GaN ungated structures

Application of transient interferometric mapping method for ESD and latch-up analysis

Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices

Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system

Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation

Dynamics of integrated vertical DMOS transistors under 100-ns TLP stress

Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique

Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry

Backside interferometric methods for localization of ESD-induced leakage current and metal shorts

A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique

Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping

Thermally-driven motion of current filaments in ESD protection devices

Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices

Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

Suchergebnisse filtern