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Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires

Scientific reports, 2023-08, Vol.13 (1), p.12880-12880, Article 12880

2023

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Dilute nitrides-based nanowires-a promising platform for nanoscale photonics and energy technology

Nanotechnology, 2019-07, Vol.30 (29), p.292002-292002

2019

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Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering

ACS nano, 2022-08, Vol.16 (8), p.12666-12676

2022

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Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering

Nature photonics, 2021-06, Vol.15 (6), p.475-482

2021

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Spin injection and helicity control of surface spin photocurrent in a three dimensional topological insulator

Nature communications, 2017-05, Vol.8 (1), p.15401-15401, Article 15401

2017

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Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

Nano letters, 2017-03, Vol.17 (3), p.1775-1781

2017

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Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects

Nature communications, 2018-09, Vol.9 (1), p.3575-9, Article 3575

2018

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Self-assembled nanodisks in coaxial GaAs/GaAsBi/GaAs core-multishell nanowires

Nanoscale, 2020-10, Vol.12 (4), p.2849-2858

2020

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Effects of Strong Band-Tail States on Exciton Recombination Dynamics in Dilute Nitride GaP/GaNP Core/Shell Nanowires

Journal of physical chemistry. C, 2018-08, Vol.122 (33), p.19212-19218

2018

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Oxygen and zinc vacancies in as-grown ZnO single crystals

Journal of physics. D, Applied physics, 2009-09, Vol.42 (17), p.175411-175411 (8)

2009

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Vibronic coherence contributes to photocurrent generation in organic semiconductor heterojunction diodes

Nature communications, 2020-01, Vol.11 (1), p.617-617, Article 617

2020

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An Efficient Deep-Subwavelength Second Harmonic Nanoantenna Based on Surface Plasmon-Coupled Dilute Nitride GaNP Nanowires

Nano letters, 2021-04, Vol.21 (8), p.3426-3434

2021

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Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering

Advanced functional materials, 2021-09, Vol.31 (36), p.n/a

2021

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Color center in β-Ga2O3 emitting at the telecom range

Applied physics letters, 2024-01, Vol.124 (4)

2024

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Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires

Nanoscale, 2016-09, Vol.8 (35), p.15939-15947

2016

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Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range

Nanotechnology, 2020-01, Vol.31 (6), p.65702-065702

2020

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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP–InP Core–Shell Nanowires

Nano letters, 2019-04, Vol.19 (4), p.2674-2681

2019

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Identifying a Generic and Detrimental Role of Fano Resonance in Spin Generation in Semiconductor Nanostructures

Physical review letters, 2021-09, Vol.127 (12), p.127401-127401, Article 127401

2021

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Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor

Nature materials, 2009-03, Vol.8 (3), p.198-202

2009

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Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires

Scientific reports, 2020-05, Vol.10 (1), p.8216-8216, Article 8216

2020

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Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires

Nanotechnology, 2019-06, Vol.30 (24), p.244002-244002

2019

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Band Structure of Wurtzite GaBiAs Nanowires

Nano letters, 2019-09, Vol.19 (9), p.6454-6460

2019

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Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires

Scientific reports, 2015-06, Vol.5 (1), p.11653-11653, Article 11653

2015

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Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Nanotechnology, 2019-10, Vol.30 (40), p.405703-405703

2019

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Amine Gas‐Induced Reversible Optical Bleaching of Bismuth‐Based Lead‐Free Perovskite Thin Films

Advanced science, 2024-01, Vol.11 (4), p.e2306391-n/a

2024

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Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires

Dilute nitrides-based nanowires-a promising platform for nanoscale photonics and energy technology

Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering

Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering

Spin injection and helicity control of surface spin photocurrent in a three dimensional topological insulator

Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects

Self-assembled nanodisks in coaxial GaAs/GaAsBi/GaAs core-multishell nanowires

Effects of Strong Band-Tail States on Exciton Recombination Dynamics in Dilute Nitride GaP/GaNP Core/Shell Nanowires

Oxygen and zinc vacancies in as-grown ZnO single crystals

Vibronic coherence contributes to photocurrent generation in organic semiconductor heterojunction diodes

An Efficient Deep-Subwavelength Second Harmonic Nanoantenna Based on Surface Plasmon-Coupled Dilute Nitride GaNP Nanowires

Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering

Color center in β-Ga2O3 emitting at the telecom range

Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires

Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range

Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP–InP Core–Shell Nanowires

Identifying a Generic and Detrimental Role of Fano Resonance in Spin Generation in Semiconductor Nanostructures

Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor

Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires

Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires

Band Structure of Wurtzite GaBiAs Nanowires

Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Amine Gas‐Induced Reversible Optical Bleaching of Bismuth‐Based Lead‐Free Perovskite Thin Films

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