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GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

Applied physics letters, 2016-01, Vol.108 (3)

2016

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GeSn p-i-n photodetector for all telecommunication bands detection

Optics express, 2011-03, Vol.19 (7), p.6400-6405

2011

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Harnessing microcomb-based parallel chaos for random number generation and optical decision making

Nature communications, 2023-07, Vol.14 (1), p.4590-4590, Article 4590

2023

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Multilayer Graphene–GeSn Quantum Well Heterostructure SWIR Light Source

Small (Weinheim an der Bergstrasse, Germany), 2018-04, Vol.14 (17), p.e1704414-n/a

2018

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Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA+U approach

Journal of applied physics, 2015-10, Vol.118 (16)

2015

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Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

Journal of crystal growth, 2018-06, Vol.492, p.29-34

2018

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48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth

Journal of lightwave technology, 2017-12, Vol.35 (24), p.5306-5310

2017

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Recent progress in GeSn growth and GeSn-based photonic devices

Journal of semiconductors, 2018-06, Vol.39 (6), p.61006

2018

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High-responsivity GeSn short-wave infrared p-i-n photodetectors

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion

Journal of materials science, 2021-07, Vol.56 (21), p.12270-12284

2021

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Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals

Journal of physical chemistry. C, 2018-11, Vol.122 (47), p.26825-26834

2018

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Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn

Scientific reports, 2020-04, Vol.10 (1), p.6161-6161, Article 6161

2020

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Silicon Based GeSn p-i-n Photodetector for SWIR Detection

IEEE photonics journal, 2016-10, Vol.8 (5), p.1-6

2016

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GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

IEEE electron device letters, 2016-06, Vol.37 (6), p.701-704

2016

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Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

Applied physics letters, 2014-05, Vol.104 (19)

2014

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A new 3-dB bandwidth record of Ge photodiode on Si

Journal of semiconductors, 2022-06, Vol.43 (6), p.60202-8

2022

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Double-shell-structured Si@SiOx@C composite material for long-life lithium-ion storage

Ionics, 2020-07, Vol.26 (7), p.3275-3280

2020

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Investigation of lead surface segregation during germanium–lead epitaxial growth

Journal of materials science, 2020-04, Vol.55 (11), p.4762-4768

2020

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Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect

Journal of applied physics, 2018-08, Vol.124 (5)

2018

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High-Performance GeSn Photodetector Covering All Telecommunication Bands

IEEE photonics journal, 2021-04, Vol.13 (2), p.1-9

2021

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Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method

Journal of alloys and compounds, 2018-06, Vol.750, p.182-188

2018

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High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1183-1187

2013

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Epitaxial growth and thermal stability of Ge1―xSnx alloys on Ge-buffered Si(0 0 1) substrates

Journal of crystal growth, 2011-02, Vol.317 (1), p.43-46

2011

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Influence of H2 on strain evolution of high-Sn-content Ge1−xSnx alloys

Journal of materials science, 2017, Vol.52 (1), p.431-436

2017

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Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration

Physica. B, Condensed matter, 2014-06, Vol.443, p.43-48

2014

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GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

GeSn p-i-n photodetector for all telecommunication bands detection

Harnessing microcomb-based parallel chaos for random number generation and optical decision making

Multilayer Graphene–GeSn Quantum Well Heterostructure SWIR Light Source

Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA+U approach

Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth

Recent progress in GeSn growth and GeSn-based photonic devices

High-responsivity GeSn short-wave infrared p-i-n photodetectors

Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion

Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals

Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn

Silicon Based GeSn p-i-n Photodetector for SWIR Detection

GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

A new 3-dB bandwidth record of Ge photodiode on Si

Double-shell-structured Si@SiOx@C composite material for long-life lithium-ion storage

Investigation of lead surface segregation during germanium–lead epitaxial growth

Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect

High-Performance GeSn Photodetector Covering All Telecommunication Bands

Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method

High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection

Epitaxial growth and thermal stability of Ge1―xSnx alloys on Ge-buffered Si(0 0 1) substrates

Influence of H2 on strain evolution of high-Sn-content Ge1−xSnx alloys

Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration

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