UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

AlGaN/AlN/GaN high-power microwave HEMT

IEEE electron device letters, 2001-10, Vol.22 (10), p.457-459

2001

Volltextzugriff (PDF)

Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

IEEE electron device letters, 2004-05, Vol.25 (5), p.229-231

2004

Volltextzugriff (PDF)

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

IEEE electron device letters, 2004-01, Vol.25 (1), p.7-9

2004

Volltextzugriff (PDF)

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.562-565

2006

Volltextzugriff (PDF)

p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

IEEE electron device letters, 2002-10, Vol.23 (10), p.588-590

2002

Volltextzugriff (PDF)

Gallium nitride based transistors

Journal of physics. Condensed matter, 2001-08, Vol.13 (32), p.7139-7157

2001

Volltextzugriff (PDF)

Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-02, Vol.23 (2), p.76-78

2002

Volltextzugriff (PDF)

Proton-induced damage in gallium nitride-based Schottky diodes

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2239-2244

2005

Volltextzugriff (PDF)

2.1 A∕mm current density AlGaN∕GaN HEMT

Electronics letters, 2003-04, Vol.39 (7), p.625

2003

Volltextzugriff (PDF)

Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-02, Vol.23 (2), p.76-78

2002

Volltextzugriff (PDF)

Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-03, Vol.23 (3), p.118-120

2002

Volltextzugriff (PDF)

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

Applied physics letters, 2002-12, Vol.81 (23), p.4395-4397

2002

Volltextzugriff (PDF)

Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

IEEE electron device letters, 2002-06, Vol.23 (6), p.306-308

2002

Volltextzugriff (PDF)

Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1877-1881

2007

Volltextzugriff (PDF)

Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

Journal of electronic materials, 2004-05, Vol.33 (5), p.422-425

2004

Volltextzugriff (PDF)

Unpassivated p-GaN∕AlGaN∕GaN HEMTs with 7.1 W∕mm at 10 GHz

Electronics letters, 2003-09, Vol.39 (19), p.1419

2003

Volltextzugriff (PDF)

Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-03, Vol.23 (3), p.118-120

2002

Volltextzugriff (PDF)

Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.837-840

2005

Volltextzugriff (PDF)

12 W∕mm power density AlGaN∕GaN HEMTs on sapphire substrate

Electronics letters, 2004, Vol.40 (1), p.73

2004

Volltextzugriff (PDF)

High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

Volltextzugriff (PDF)

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

2010 IEEE International Reliability Physics Symposium, 2010, p.807-812

2010

Volltextzugriff (PDF)

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Applied physics letters, 2003-12, Vol.83 (23), p.4779-4781

2003

Volltextzugriff (PDF)

Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs

IEEE electron device letters, 2001-05, Vol.22 (5), p.197-199, Article 197

2001

Volltextzugriff (PDF)

Oxidation control of GaAs pHEMTs for high efficiency applications

IEEE electron device letters, 2002-07, Vol.23 (7), p.380-382

2002

Volltextzugriff (PDF)

Parasitic effects and long term stability of InP-based HEMTs

Microelectronics and reliability, 2000-08, Vol.40 (8-10), p.1715-1720

2000

Volltextzugriff (PDF)

1 – 25 von 76

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(55)
Mit Volltextzugriff
(66)

Publikationsform

Sprache

Englisch
(76)
Japanisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(40)
Technology
(22)
Engineering
(20)
Engineering, Electrical & Electronic
(20)
Hemts
(20)
Gallium Nitride
(18)
Modfets
(18)
Humans
(14)
Life Sciences & Biomedicine
(14)
Aluminum Gallium Nitride
(13)
Physical Sciences
(12)
Physics
(12)
Exact Sciences And Technology
(11)
Neurosciences & Neurology
(10)
Applied Sciences
(9)
Clinical Neurology
(9)
Devices
(9)
Gallium Nitrides
(9)
High Electron Mobility Transistors
(9)
Male
(9)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

AlGaN/AlN/GaN high-power microwave HEMT

Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

Gallium nitride based transistors

Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

Proton-induced damage in gallium nitride-based Schottky diodes

2.1 A∕mm current density AlGaN∕GaN HEMT

Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

Unpassivated p-GaN∕AlGaN∕GaN HEMTs with 7.1 W∕mm at 10 GHz

Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering

12 W∕mm power density AlGaN∕GaN HEMTs on sapphire substrate

High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs

Oxidation control of GaAs pHEMTs for high efficiency applications

Parasitic effects and long term stability of InP-based HEMTs

Suchergebnisse filtern