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Ultra-Fast SiC Wafer Surface Roughness Mapping

Materials Science Forum, 2016-05, Vol.858, p.489-492

2016

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Bulk Growth of Large Area SiC Crystals

Materials Science Forum, 2016-05, Vol.858 (5, 2016), p.5-10

2016

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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

Materials science forum, 2018-06, Vol.924, p.137-142

2018

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Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Materials science forum, 2014-02, Vol.778-780, p.1089-1095, Article 1089

2014

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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

Materials Science Forum, 2016-05, Vol.858, p.167-172

2016

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Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Materials science forum, 2015-06, Vol.821-823, p.387-390

2015

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Exploration of bulk and epitaxy defects in 4H-SiC using large scale optical characterization

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 226

2017

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Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

Materials science forum, 2012-05, Vol.717-720, p.297-300

2012

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Development of 15 kV 4H-SiC IGBTs

Materials science forum, 2012-05, Vol.717-720, p.1135-1138

2012

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15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Materials science forum, 2013-01, Vol.740-742, p.978-981

2013

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Development of Multiwafer Warm-Wall Planetary VPE Reactors for SiC Device Production

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.465-473

Burk, A. A.

2006

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20 kV 4H-SiC N-IGBTs

Materials science forum, 2014-02, Vol.778-780, p.1030-1033

2014

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10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Materials science forum, 2010-04, Vol.645-648, p.1025-1028, Article 1025

2010

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SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

Materials science forum, 2012-05, Vol.717-720, p.75-80

2012

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15 kV IGBTs in 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.954-957, Article 954

2013

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Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Materials science forum, 2010, Vol.645-648, p.331-334

2010

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9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

Materials science forum, 2010-04, Vol.645-648, p.1017-1020

2010

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16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Materials science forum, 2013-01, Vol.740-742, p.895-898

2013

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15 kV n-GTOs in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.651-654

2019

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Critical Technical Issues in High Voltage SiC Power Devices

Materials science forum, 2009-01, Vol.600-603, p.895-900

2009

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Defect Status in SiC Manufacturing

Materials science forum, 2009-03, Vol.615-617, p.3-6

2009

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Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions

Materials science forum, 2019-07, Vol.963, p.805-810, Article 805

2019

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Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

Materials science forum, 2015-06, Vol.821-823, p.701-704

2015

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Large Diameter 4H-SiC Substrates for Commercial Power Applications

Materials science forum, 2004-06, Vol.457-460, p.41-46

2004

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Ultra-Fast SiC Wafer Surface Roughness Mapping

Bulk Growth of Large Area SiC Crystals

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Exploration of bulk and epitaxy defects in 4H-SiC using large scale optical characterization

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

Development of 15 kV 4H-SiC IGBTs

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Development of Multiwafer Warm-Wall Planetary VPE Reactors for SiC Device Production

20 kV 4H-SiC N-IGBTs

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

15 kV IGBTs in 4H-SiC

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

15 kV n-GTOs in 4H-SiC

Critical Technical Issues in High Voltage SiC Power Devices

Defect Status in SiC Manufacturing

Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

Large Diameter 4H-SiC Substrates for Commercial Power Applications

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