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Development of 15 kV 4H-SiC IGBTs

Materials science forum, 2012-05, Vol.717-720, p.1135-1138

2012

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Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.257-260

2012

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Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Microelectronics and reliability, 2009-01, Vol.49 (1), p.32-37

2009

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A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

Journal of electronic materials, 2014-04, Vol.43 (4), p.809-813

2014

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15 kV n-GTOs in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.651-654

2019

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Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions

Materials science forum, 2019-07, Vol.963, p.805-810, Article 805

2019

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Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

Materials science forum, 2015-06, Vol.821-823, p.701-704

2015

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15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Materials science forum, 2013-01, Vol.740-742, p.978-981

2013

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Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, p.251-254

2017

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4H–SiC BJTs with current gain of 110

Solid-state electronics, 2008-07, Vol.52 (7), p.1008-1010

2008

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15 kV IGBTs in 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.954-957, Article 954

2013

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Next-Generation Planar SiC MOSFETsfrom 900 V to 15 kV

Materials science forum, 2015-06, Vol.821-823, p.701-704

2015

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Recent progress in SiC DMOSFETs and JBS diodes at Cree

2008 34th Annual Conference of IEEE Industrial Electronics, 2008, p.2885-2890

2008

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High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

Materials science forum, 2012, Vol.717-720, p.1065-1068

2012

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In Sight, Out of View: A Tale of Three Monuments

Antipode, 2006-01, Vol.38 (1), p.41-58

Burk, Adrienne L

2006

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1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Journal of electronic materials, 2008-05, Vol.37 (5), p.662-665

2008

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Voluntary intake and digestibility of reed canarygrass and timothy hay fed to horses

Journal of animal science, 2006-11, Vol.84 (11), p.3104

2006

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Private griefs, public places

Political geography, 2003-03, Vol.22 (3), p.317-333

Burk, A.L.

2003

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16 kV, 1 cm super(2), 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Materials science forum, 2013-01, Vol.740-742, p.895-898

2013

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Critical Technical Issues in High Voltage SiC Power Devices

Materials science forum, 2009-01, Vol.600-603, p.895-900

2009

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(Invited) SiC Power Devices for Next Generation Energy Efficiency

ECS transactions, 2011, Vol.41 (8), p.3-7

2011

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(Invited) An Update on High Voltage SiC Power Devices

ECS transactions, 2011, Vol.41 (8), p.39-41

2011

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1200 V 4H-SiC Bipolar Junction Transistors with A Record [beta] of 70

Journal of electronic materials, 2008-05, Vol.37 (5), p.662

2008

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1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70: Groups in Nitrides, SiC and ZnO

Journal of electronic materials, 2008, Vol.37 (5), p.662-665

2008

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4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Materials science forum, 2009, Vol.600-603, p.1159-1162

2009

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Development of 15 kV 4H-SiC IGBTs

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

15 kV n-GTOs in 4H-SiC

Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs

4H–SiC BJTs with current gain of 110

15 kV IGBTs in 4H-SiC

Next-Generation Planar SiC MOSFETsfrom 900 V to 15 kV

Recent progress in SiC DMOSFETs and JBS diodes at Cree

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

In Sight, Out of View: A Tale of Three Monuments

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Voluntary intake and digestibility of reed canarygrass and timothy hay fed to horses

Private griefs, public places

16 kV, 1 cm super(2), 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Critical Technical Issues in High Voltage SiC Power Devices

(Invited) SiC Power Devices for Next Generation Energy Efficiency

(Invited) An Update on High Voltage SiC Power Devices

1200 V 4H-SiC Bipolar Junction Transistors with A Record [beta] of 70

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70: Groups in Nitrides, SiC and ZnO

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

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