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Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

Materials science forum, 2014-02, Vol.778-780, p.483-486

2014

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Simulation of thermo-mechanical effect in bulk-silicon FinFETs

Materials science in semiconductor processing, 2016-02, Vol.42, p.242-246

2016

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Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation

IEEE sensors journal, 2016-06, Vol.16 (11), p.4246-4252, Article 4246

2016

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Optimization of 4H-SiC photodiodes as selective UV sensors

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 622

2017

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A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.85-88

2016

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Simulation of process variations in FinFET transistor patterning

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.299-302

2016

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Numerical evaluation of the ITRS transistor scaling

Journal of computational electronics, 2015-03, Vol.14 (1), p.192-202

2015

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Double patterning: Simulating a variability challenge for advanced transistors

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.105-108

2013

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Simulation of plasma immersion ion implantation into silicon

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.218-221

2015

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Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation

Materials science forum, 2015-06, Vol.821-823, p.737-740

2015

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On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC MOSFETs

ECS transactions, 2013, Vol.58 (4), p.81-86

2013

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Influence of Ion Implantation in SiC on the Channel Mobility in Lateral N-Channel MOSFETs

ECS transactions, 2013, Vol.58 (4), p.71-80

2013

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Hierarchical variability-aware compact models of 20nm bulk CMOS

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.325-328

2015

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Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

Materials science forum, 2013-01, Vol.740-742, p.537-540

2013

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Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Materials science forum, 2013-01, Vol.740-742, p.533-536

2013

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Thermal properties of interconnects in power MOSFETs

20th International Workshop on Thermal Investigations of ICs and Systems, 2014, p.1-6

2014

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Self-heating of nano-scale SOI MOSFETs: TCAD and molecular dynamics simulations

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2013, p.305-308

2013

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Simulation of AsH3 plasma immersion ion implantation into silicon

2014 20th International Conference on Ion Implantation Technology (IIT), 2014, p.1-4

2014

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On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC Mosfets

Meeting abstracts (Electrochemical Society), 2013-10, Vol.MA2013-02 (25), p.1900-1900

2013

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Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs

Meeting abstracts (Electrochemical Society), 2013-10, Vol.MA2013-02 (25), p.1899-1899

2013

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Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

Simulation of thermo-mechanical effect in bulk-silicon FinFETs

Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation

Optimization of 4H-SiC photodiodes as selective UV sensors

A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

Simulation of process variations in FinFET transistor patterning

Numerical evaluation of the ITRS transistor scaling

Double patterning: Simulating a variability challenge for advanced transistors

Simulation of plasma immersion ion implantation into silicon

Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation

On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC MOSFETs

Influence of Ion Implantation in SiC on the Channel Mobility in Lateral N-Channel MOSFETs

Hierarchical variability-aware compact models of 20nm bulk CMOS

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Thermal properties of interconnects in power MOSFETs

Self-heating of nano-scale SOI MOSFETs: TCAD and molecular dynamics simulations

Simulation of AsH3 plasma immersion ion implantation into silicon

On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC Mosfets

Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs

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