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Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs

Solid-state electronics, 2003-03, Vol.47 (3), p.407-412

2003

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Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires

Journal of crystal growth, 2011-07, Vol.327 (1), p.27-34

2011

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Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth

Physica. E, Low-dimensional systems & nanostructures, 2008-05, Vol.40 (7), p.2457-2461

2008

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Thermal stability of C-doped GaAs/AlAs DBR structures

Solid-state electronics, 2008-08, Vol.52 (8), p.1256-1259

2008

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Elemental mapping using the Ga 3d and In 4d transitions in the ε2 absorption spectra derived from EELS

Ultramicroscopy, 2004-11, Vol.101 (2-4), p.257-264

2004

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S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.242-244

2003

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Compositional variation in as-grown GaInNAs/GaAs quantum well structures

Journal of crystal growth, 2001-11, Vol.233 (1), p.1-4

2001

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Optical properties of GaInNAs/GaAs quantum wells

Solid-state electronics, 2003-03, Vol.47 (3), p.483-487

2003

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Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE

Thin solid films, 1999, Vol.343, p.554-557

1999

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Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well

Solid-state electronics, 2003-03, Vol.47 (3), p.425-429

2003

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The microstructure and thermal stability of CBE grown heavily carbon doped GaAs

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.752-756

1997

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Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of Al xGa 1- xAs

Vacuum, 1999, Vol.53 (1), p.7-10

1999

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Process-induced modification to the surface of crystalline GaAs measured by photometry

Applied surface science, 1999-04, Vol.143 (1), p.223-228

1999

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In-situ monitoring of carbon doped GaAs and of periodic carbon doped [formula omitted] structures grown by chemical beam epitaxy

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.394-398

1995

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A comparison of the transitory periods in GaAs and AlGaAs CBE growth

Journal of crystal growth, 1998-06, Vol.188 (1), p.21-25

1998

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Transient surface states during the CBE growth of GaAs

Journal of crystal growth, 1997-05, Vol.175, p.1217-1222

1997

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Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr 4

Journal of crystal growth, 1996, Vol.164 (1), p.383-388

1996

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Beam equivalent pressure measurements in chemical beam epitaxy

Journal of crystal growth, 1993-02, Vol.127 (1), p.265-269

1993

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The use of diethylsulphide for the doping of Al Ga1−As grown by chemical beam epitaxy

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.399-403

1995

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SAW diagnostics of GaAs surface structure

Physica. B, Condensed matter, 1999-03, Vol.263, p.84-86

1999

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CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors

Journal of crystal growth, 1992-05, Vol.120 (1-4), p.206-211

1992

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Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs

Vacuum, 1999-05, Vol.53 (1-2), p.7-10

1999

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Growth mechanisms and morphology of Ar + laser assisted CBE of GaAs

Journal of crystal growth, 1996-07, Vol.164 (1), p.71-76

1996

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Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4

Journal of crystal growth, 1996-07, Vol.164 (1-4), p.383-388

1996

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Carbon delta doping in chemical beam epitaxy using CBr4

Journal of crystal growth, 1997-05, Vol.175-176, p.377-382

1997

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Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires

Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth

Thermal stability of C-doped GaAs/AlAs DBR structures

Elemental mapping using the Ga 3d and In 4d transitions in the ε2 absorption spectra derived from EELS

S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides

Compositional variation in as-grown GaInNAs/GaAs quantum well structures

Optical properties of GaInNAs/GaAs quantum wells

Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE

Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well

The microstructure and thermal stability of CBE grown heavily carbon doped GaAs

Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of Al xGa 1- xAs

Process-induced modification to the surface of crystalline GaAs measured by photometry

In-situ monitoring of carbon doped GaAs and of periodic carbon doped [formula omitted] structures grown by chemical beam epitaxy

A comparison of the transitory periods in GaAs and AlGaAs CBE growth

Transient surface states during the CBE growth of GaAs

Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr 4

Beam equivalent pressure measurements in chemical beam epitaxy

The use of diethylsulphide for the doping of Al Ga1−As grown by chemical beam epitaxy

SAW diagnostics of GaAs surface structure

CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors

Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs

Growth mechanisms and morphology of Ar + laser assisted CBE of GaAs

Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4

Carbon delta doping in chemical beam epitaxy using CBr4

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