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Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD

Nanotechnology, 2001-12, Vol.12 (4), p.434-436

2001

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High-power semiconductor 0.89 — 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures

Quantum electronics (Woodbury, N.Y.), 2002-03, Vol.32 (3), p.213-215

2002

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Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes

Quantum electronics (Woodbury, N.Y.), 2002-03, Vol.32 (3), p.216-218

2002

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Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition

Inorganic materials, 2004-08, Vol.40 (8), p.787-790

2004

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Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD

Journal of crystal growth, 2002-04, Vol.237, p.264-268

2002

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Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50

Quantum electronics (Woodbury, N.Y.), 1998-04, Vol.28 (4), p.292-293

1998

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Laser diodes (λ=0.98 μm) with a narrow radiation pattern and low internal optical losses

Technical physics letters, 2003-12, Vol.29 (12), p.980-983

2003

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MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact

Semiconductors (Woodbury, N.Y.), 2002-09, Vol.36 (9), p.1065-1069

2002

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Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

Journal of crystal growth, 2003-02, Vol.248, p.114-118

2003

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808 nm high power laser diodes based on MOCVD grown AlGaAs/GaAs broad waveguide heterostructures

Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715), 2003, Vol.1, p.230 vol.1

2003

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High-power semiconductor 0.89 - 1.06-{mu}m lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures

Quantum electronics (Woodbury, N.Y.), 2002-03, Vol.32 (3)

2002

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Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD

Journal of crystal growth, 2002, Vol.237-39, p.264-268

2002

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Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

Journal of crystal growth, 2003, Vol.248, p.114-118

2003

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Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD

Nanotechnology (Bristol. Print), 2001, Vol.12 (4), p.434-436

2001

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Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50

Quantum electronics (Woodbury, N.Y.), 1998, Vol.28 (4), p.292-293

1998

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Reliability of carbon doped MOCVD grown InGaAs/AlGaAs high power laser diodes

2003

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Bioprocessing of Mining and Metallurgical Wastes Containing Non-Ferrous and Precious Metals

Advanced materials research, 2013-01, Vol.825, p.301-304

2013

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Selection of a community of acidochemolithotrophic microorganisms with a high oxidation rate of pyrrhotite-containing sulphide ore flotation concentrate

Applied biochemistry and microbiology, 2013-09, Vol.49 (5), p.495-501

2013

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Oxidation of sulfur-containing substrates by aboriginal and experimentally designed microbial communities

Applied biochemistry and microbiology, 2012-11, Vol.48 (6), p.577-582

2012

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Two-stage process of bacterial-chemical oxidation of refractory pyrite-arsenopyrite gold-bearing concentrate

Applied biochemistry and microbiology, 2011-12, Vol.47 (9), p.833-840

2011

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Selection of a community of acidochemolithotrophic microorganisms with a high oxidation rate of pyrrhotite- containing sulphide ore flotatation concentrate

Prikladnaja biohimija i mikrobiologija, 2013-09, Vol.49 (5), p.491-498

2013

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Identification of the dominant bacterium of two-stage biooxidation of gold-arsenic concentrate

Microbiology (New York), 2010-06, Vol.79 (3), p.342-348

2010

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Effect of the aeration mode and yeast extract on the oxidation of high-pyrrhotite sulfide ore flotation concentrate and on the composition of the acidophilic chemolithotrophic microbial community

Microbiology (New York), 2014-09, Vol.83 (5), p.558-567

2014

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Oxidation of sulfur-containing substrates by aboriginal and experimentally designed microbial communities

Prikladnaja biohimija i mikrobiologija, 2012-11, Vol.48 (6), p.640

2012

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The Experimental Laser Facility Based on the High-Power Repetitively-Pulsed E-beam-sustained CO2 Laser

Beamed Energy Propulsion: Third International Symposium on Beamed Energy Propulsion, 2005-10, Vol.766, p.361-372

2005

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Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD

High-power semiconductor 0.89 — 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures

Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes

Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition

Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD

Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50

Laser diodes (λ=0.98 μm) with a narrow radiation pattern and low internal optical losses

MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact

Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

808 nm high power laser diodes based on MOCVD grown AlGaAs/GaAs broad waveguide heterostructures

High-power semiconductor 0.89 - 1.06-{mu}m lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures

Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD

Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD

Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50

Reliability of carbon doped MOCVD grown InGaAs/AlGaAs high power laser diodes

Bioprocessing of Mining and Metallurgical Wastes Containing Non-Ferrous and Precious Metals

Selection of a community of acidochemolithotrophic microorganisms with a high oxidation rate of pyrrhotite-containing sulphide ore flotation concentrate

Oxidation of sulfur-containing substrates by aboriginal and experimentally designed microbial communities

Two-stage process of bacterial-chemical oxidation of refractory pyrite-arsenopyrite gold-bearing concentrate

Selection of a community of acidochemolithotrophic microorganisms with a high oxidation rate of pyrrhotite- containing sulphide ore flotatation concentrate

Identification of the dominant bacterium of two-stage biooxidation of gold-arsenic concentrate

Effect of the aeration mode and yeast extract on the oxidation of high-pyrrhotite sulfide ore flotation concentrate and on the composition of the acidophilic chemolithotrophic microbial community

Oxidation of sulfur-containing substrates by aboriginal and experimentally designed microbial communities

The Experimental Laser Facility Based on the High-Power Repetitively-Pulsed E-beam-sustained CO2 Laser

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