UB Paderborn / Katalog / Suche / in CDI

Real-time evolution of trapped charge in a SiO2 layer: An electrostatic force microscopy study

Applied physics letters, 2001-09, Vol.79 (13), p.2010-2012

2001

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Atomic force microscope laser illumination effects on a sample and its application for transient spectroscopy

Applied physics letters, 2003-09, Vol.83 (12), p.2486-2488

2003

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Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope

Journal of applied physics, 2003-08, Vol.94 (4), p.2680-2685

2003

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Quantification of Shallow-junction Dopant Loss during CMOS Process

AIP conference proceedings, 2005-09, Vol.788 (1)

2005

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Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

Applied physics letters, 2000-07, Vol.77 (1), p.106-108

2000

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Electrical characterization of an operating Si pn -junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

Journal of applied physics, 2001-07, Vol.90 (1), p.443-448

2001

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Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

Applied physics letters, 2004-08, Vol.85 (6), p.988-990

2004

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Excitonic transitions in β-FeSi2 epitaxial films and single crystals

Journal of applied physics, 2004-03, Vol.95 (5), p.2441-2447

2004

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Dopant loss of ultrashallow junction by wet chemical cleaning

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.499-502

2006

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Quantitative analysis of ultrashallow junction of sub- 50 nm gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.503-506

2006

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Coulomb interaction among transporting charge carriers confined in two dimensions

Journal of applied physics, 2008-10, Vol.104 (8), p.083716-083716-5

2008

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PSPICE analysis of a scanning capacitance microscope sensor

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-01, Vol.22 (1), p.417-421

2004

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Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1394-1397

2005

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Issues of Ultrashallow Junction for Sub-50 nm Gate Length Transistors: Metrology, Dopant Loss, and Novel Electrostatic Junction

2006 International Workshop on Junction Technology, 2006, p.96-99

2006

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Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE)

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.832-835

2005

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Quantitative analysis of ultrashallow junction of sub-50nm gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.503-506

2006

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Low temperature synthesis of the microwave dielectric Bi2O3-MgO-Nb2O5 nano powders by metal-citrate method

Journal of alloys and compounds, 2006-05, Vol.415 (1-2), p.234-238

2006

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Low temperature synthesis of the microwave dielectric Bi2O3-MgO-Nb2O5 nano powders by metal-citrate method

Journal of alloys and compounds, 2006-03, Vol.413 (1-2), p.188-192

2006

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Analytical bias dependent noise model for InP HEMT's

IEEE transactions on electron devices, 1995-11, Vol.42 (11), p.1882-1889

1995

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Reliability and Cost of GMO Detection

Genetically Modified and Non‐Genetically Modified Food Supply Chains: Co‐Existence and Traceability, 2012, p.307-332

2012

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Approach for developing a large-signal model of a 150-GHz HEMT

International journal of microwave and millimeter-wave computer-aided engineering, 1996-07, Vol.6 (4), p.234-242

1996

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Real-time evolution of trapped charge in a SiO2 layer: An electrostatic force microscopy study

Atomic force microscope laser illumination effects on a sample and its application for transient spectroscopy

Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope

Quantification of Shallow-junction Dopant Loss during CMOS Process

Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

Electrical characterization of an operating Si pn -junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

Excitonic transitions in β-FeSi2 epitaxial films and single crystals

Dopant loss of ultrashallow junction by wet chemical cleaning

Quantitative analysis of ultrashallow junction of sub- 50 nm gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance

Coulomb interaction among transporting charge carriers confined in two dimensions

PSPICE analysis of a scanning capacitance microscope sensor

Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices

Issues of Ultrashallow Junction for Sub-50 nm Gate Length Transistors: Metrology, Dopant Loss, and Novel Electrostatic Junction

Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE)

Quantitative analysis of ultrashallow junction of sub-50nm gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance

Low temperature synthesis of the microwave dielectric Bi2O3-MgO-Nb2O5 nano powders by metal-citrate method

Low temperature synthesis of the microwave dielectric Bi2O3-MgO-Nb2O5 nano powders by metal-citrate method

Analytical bias dependent noise model for InP HEMT's

Reliability and Cost of GMO Detection

Approach for developing a large-signal model of a 150-GHz HEMT

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