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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1344-1355

2024

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Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

Applied physics letters, 2020-12, Vol.117 (26)

2020

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Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Applied physics letters, 2023-05, Vol.122 (18)

2023

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Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2147-2150

2014

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Review on the degradation of GaN-based lateral power transistors

e-Prime, 2021, Vol.1, p.100018, Article 100018

2021

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Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1-8

2024

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Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

IEEE journal of selected topics in quantum electronics, 2025-03, Vol.31 (2: Pwr. and Effic. Scaling in Semiconductor Lasers), p.1-9

2025

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Bias-dependent degradation of single quantum well on InGaN-based light emitting diode

Microelectronics and reliability, 2023-11, Vol.150, p.115132, Article 115132

2023

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Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode

Microelectronics and reliability, 2021-11, Vol.126, p.114377, Article 114377

2021

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Current induced degradation study on state of the art DUV LEDs

Microelectronics and reliability, 2018-09, Vol.88-90, p.868-872

2018

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Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis

Microelectronics and reliability, 2023-11, Vol.150, p.115131, Article 115131

2023

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Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers

IEEE journal of quantum electronics, 2021-02, Vol.57 (1), p.1-1

2021

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Early failure of high-power white LEDs for outdoor applications under extreme electrical stress: Role of silicone encapsulant

Microelectronics and reliability, 2023-11, Vol.150, p.115142, Article 115142

2023

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Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon

Microelectronics and reliability, 2022-11, Vol.138, p.114714, Article 114714

2022

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Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements

Microelectronics and reliability, 2020-11, Vol.114, p.113786, Article 113786

2020

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Long-term degradation mechanisms of mid-power LEDs for lighting applications

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1754-1758

2015

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Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

Microelectronics and reliability, 2021-10, Vol.126

2021

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Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress

Microelectronics and reliability, 2022-11, Vol.138, p.114612, Article 114612

2022

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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Microelectronics and reliability, 2022-11, Vol.138, p.114708, Article 114708

2022

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Understanding the optical degradation of 845nm micro-transfer-printed VCSILs for photonic integrated circuits

IEEE journal of quantum electronics, 2023, Vol.59 (4)

2023

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Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

Microelectronics and reliability, 2021-11, Vol.126 (C), p.114222, Article 114222

2021

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Understanding the degradation processes of GaN based LEDs submitted to extremely high current density

Microelectronics and reliability, 2017-09, Vol.76-77, p.556-560

2017

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Prevalence and Clinical Manifestations of Primary Aldosteronism Encountered in Primary Care Practice

Journal of the American College of Cardiology, 2017-04, Vol.69 (14), p.1811-1820

2017

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Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress

Microelectronics and reliability, 2018-09, Vol.88-90, p.887-890

2018

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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Review on the degradation of GaN-based lateral power transistors

Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics

Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

Bias-dependent degradation of single quantum well on InGaN-based light emitting diode

Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode

Current induced degradation study on state of the art DUV LEDs

Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis

Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers

Early failure of high-power white LEDs for outdoor applications under extreme electrical stress: Role of silicone encapsulant

Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon

Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements

Long-term degradation mechanisms of mid-power LEDs for lighting applications

Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Understanding the optical degradation of 845nm micro-transfer-printed VCSILs for photonic integrated circuits

Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density

Prevalence and Clinical Manifestations of Primary Aldosteronism Encountered in Primary Care Practice

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress

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