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Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

Microelectronic engineering, 2001-11, Vol.59 (1), p.341-349

2001

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High-resolution imaging of gigahertz polarization response arising from the interference of reflected surface acoustic waves

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2012-06, Vol.59 (6), p.1212-1218

2012

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IEEE_Xplore

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

IEEE electron device letters, 1997-05, Vol.18 (5), p.209-211

1997

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IEEE_Xplore

Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

Applied physics letters, 1993-09, Vol.63 (11), p.1510-1512

1993

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Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides

Applied physics letters, 1996-08, Vol.69 (8), p.1104-1106

1996

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Performance of a multi-electrode silicon-based dielectrophoretic cage device using four electrical contacts

Microelectronic engineering, 2011-08, Vol.88 (8), p.1795-1797

2011

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Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission

Microelectronic engineering, 2005-06, Vol.80, p.58-61

2005

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EPR identification of defects responsible for thermoluminescence in Cu-doped lithium tetraborate (Li2B4O7) crystals

Journal of luminescence, 2013-07, Vol.139, p.125-131

2013

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Photoluminescence from Ag2+ ions in lithium tetraborate (Li2B4O7) crystals

Journal of luminescence, 2014-09, Vol.153, p.79-84

2014

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Interface and bulk trap generation in metal-oxide-semiconductor capacitors

Journal of applied physics, 1990-06, Vol.67 (12), p.7439-7452

1990

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Electron effective mass in ultrathin oxide silicon MOSFET inversion layers

Semiconductor science and technology, 2005-08, Vol.20 (8), p.664-667

2005

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Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements

Applied surface science, 2010-10, Vol.257 (1), p.17-21

2010

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Interface reactions in ZrO2 based gate dielectric stacks

Journal of applied physics, 2002-08, Vol.92 (3), p.1232-1237

2002

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EXAFS and EPR analysis of the local structure of Mn-doped Li2B4O7

physica status solidi (b), 2013-07, Vol.250 (7), p.1376-1383

2013

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Aroma volatile biosynthesis in apples affected by 1-MCP and methyl jasmonate

Postharvest biology and technology, 2005-04, Vol.36 (1), p.61-68

2005

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Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interface

Journal of applied physics, 1995-03, Vol.77 (5), p.2032-2040

1995

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Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

Applied physics letters, 1989-01, Vol.54 (4), p.332-334

1989

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Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors

Journal of applied physics, 1994-09, Vol.76 (6), p.3595-3608

1994

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Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes

Journal of applied physics, 2009-01, Vol.105 (2), p.024517-024517-7

2009

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Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon

Applied physics letters, 1994-02, Vol.64 (7), p.901-903

1994

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Volatile Constituents of Bing Sweet Cherry Fruit following Controlled Atmosphere Storage

Journal of agricultural and food chemistry, 1997-01, Vol.45 (1), p.212-216

1997

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Anode hole injection and trapping in silicon dioxide

Journal of applied physics, 1996-07, Vol.80 (1), p.304-317

1996

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Ultrathin nitrided gate dielectrics by plasma-assisted processing

Microelectronic engineering, 1999, Vol.48 (1), p.67-70

1999

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Interface defects of ultrathin rapid-thermal oxide on silicon

Applied physics letters, 1993-05, Vol.62 (21), p.2682-2684

1993

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Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs

Applied physics letters, 1991-06, Vol.58 (22), p.2540-2542

1991

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Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

High-resolution imaging of gigahertz polarization response arising from the interference of reflected surface acoustic waves

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides

Performance of a multi-electrode silicon-based dielectrophoretic cage device using four electrical contacts

Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission

EPR identification of defects responsible for thermoluminescence in Cu-doped lithium tetraborate (Li2B4O7) crystals

Photoluminescence from Ag2+ ions in lithium tetraborate (Li2B4O7) crystals

Interface and bulk trap generation in metal-oxide-semiconductor capacitors

Electron effective mass in ultrathin oxide silicon MOSFET inversion layers

Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements

Interface reactions in ZrO2 based gate dielectric stacks

EXAFS and EPR analysis of the local structure of Mn-doped Li2B4O7

Aroma volatile biosynthesis in apples affected by 1-MCP and methyl jasmonate

Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interface

Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors

Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes

Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon

Volatile Constituents of Bing Sweet Cherry Fruit following Controlled Atmosphere Storage

Anode hole injection and trapping in silicon dioxide

Ultrathin nitrided gate dielectrics by plasma-assisted processing

Interface defects of ultrathin rapid-thermal oxide on silicon

Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs

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