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Two-Dimensional Pattern Formation Using Graphoepitaxy of PS‑b‑PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

ACS nano, 2014-05, Vol.8 (5), p.5227-5232

2014

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Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithography

Applied physics letters, 2002-02, Vol.80 (5), p.865-867

2002

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Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

IEEE electron device letters, 2010-07, Vol.31 (7), p.731-733

2010

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High-Performance In0.7Ga0.3As-Channel MOSFETs With High-κ Gate Dielectrics and α-Si Passivation

IEEE electron device letters, 2009, Vol.30 (1), p.5-7

2009

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Resistance anomaly near the superconducting transition temperature in short aluminum wires

Physical review letters, 1991-04, Vol.66 (17), p.2254-2257

1991

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In situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines

Applied physics letters, 1995-04, Vol.66 (14), p.1732-1734

1995

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Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency

Journal of applied physics, 1999-04, Vol.85 (8), p.5267-5269

1999

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Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-11, Vol.27 (6), p.2588-2592

2009

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Dot-matrix marks for dynamic overlay measurements in electron beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-11, Vol.31 (6), p.6

2013

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Fabrication of compact 100 nm-scale silicon metal–oxide–semiconductor field effect transistors

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1992-11, Vol.10 (6), p.2912-2916

1992

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Lithography and fabrication processes for sub-100 nm scale complementary metal–oxide semiconductor

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1995-11, Vol.13 (6), p.2688-2695

1995

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High-Performance hbox In 0.7 hbox Ga 0.3 hbox As -Channel MOSFETs With High- kappa Gate Dielectrics and alpha -Si Passivation

IEEE electron device letters, 2009-01, Vol.30 (1)

2009

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Spatially Confined Chemistry: Fabrication of Ge Quantum Dot Arrays

Journal of physical chemistry (1952), 1996-02, Vol.100 (8), p.3144-3149

1996

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200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules

2013 IEEE International Electron Devices Meeting, 2013, p.14.1.1-14.1.4

2013

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TiSi2 Formation on Submicron Polysilicon Lines: Role of Line Width and Dopant Concentration

MRS proceedings, 1993, Vol.303

1993

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Nanofabrication techniques for 100 nm-scale silicon metal oxide semiconductor field effect transistor

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1991-11, Vol.9 (6), p.2851-2855

1991

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High mobility III-V channel MOSFETs for post-Si CMOS applications

2009 IEEE International Conference on IC Design and Technology, 2009, p.161-164

2009

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Two gates are better than one [double-gate MOSFET process]

IEEE circuits and devices magazine, 2003-01, Vol.19 (1), p.48-62

2003

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Effective Schottky Barrier lowering for contact resistivity reduction using silicides as diffusion sources

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.154-155

2010

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A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.64-65

2011

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Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

2007 IEEE International Electron Devices Meeting, 2007, p.1029-1031

2007

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Sub- 50 nm half-pitch imaging with a low activation energy chemically amplified photoresist

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-11, Vol.22 (6), p.3479-3484

2004

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Fabrication and characterization of compact 100nm scale metal oxide semiconductor field effect transistors

Microelectronic engineering, 1993-04, Vol.21 (1), p.409-417

1993

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Ultrasonic and dip resist development processes for 50 nm device fabrication

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1997-11, Vol.15 (6), p.2621-2626

1997

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Aggressively scaled (0.143 /spl mu/m/sup 2/) 6T-SRAM cell for the 32 nm node and beyond

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.261-264

2004

Volltextzugriff (PDF)

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Two-Dimensional Pattern Formation Using Graphoepitaxy of PS‑b‑PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithography

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

High-Performance In0.7Ga0.3As-Channel MOSFETs With High-κ Gate Dielectrics and α-Si Passivation

Resistance anomaly near the superconducting transition temperature in short aluminum wires

In situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines

Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping

Dot-matrix marks for dynamic overlay measurements in electron beam lithography

Fabrication of compact 100 nm-scale silicon metal–oxide–semiconductor field effect transistors

Lithography and fabrication processes for sub-100 nm scale complementary metal–oxide semiconductor

High-Performance hbox In 0.7 hbox Ga 0.3 hbox As -Channel MOSFETs With High- kappa Gate Dielectrics and alpha -Si Passivation

Spatially Confined Chemistry: Fabrication of Ge Quantum Dot Arrays

200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules

TiSi2 Formation on Submicron Polysilicon Lines: Role of Line Width and Dopant Concentration

Nanofabrication techniques for 100 nm-scale silicon metal oxide semiconductor field effect transistor

High mobility III-V channel MOSFETs for post-Si CMOS applications

Two gates are better than one [double-gate MOSFET process]

Effective Schottky Barrier lowering for contact resistivity reduction using silicides as diffusion sources

A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

Sub- 50 nm half-pitch imaging with a low activation energy chemically amplified photoresist

Fabrication and characterization of compact 100nm scale metal oxide semiconductor field effect transistors

Ultrasonic and dip resist development processes for 50 nm device fabrication

Aggressively scaled (0.143 /spl mu/m/sup 2/) 6T-SRAM cell for the 32 nm node and beyond

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