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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Nature photonics, 2020-06, Vol.14 (6), p.375-382

2020

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Impact of tensile strain on low Sn content GeSn lasing

Scientific reports, 2019-01, Vol.9 (1), p.259-259, Article 259

2019

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Tailoring Mechanically Tunable Strain Fields in Graphene

Nano letters, 2018-03, Vol.18 (3), p.1707-1713

2018

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Compositional dependence of the band-gap of Ge1−x−ySixSny alloys

Applied physics letters, 2016-06, Vol.108 (24)

2016

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Optically Pumped GeSn Microdisk Lasers on Si

ACS photonics, 2016-07, Vol.3 (7), p.1279-1285

2016

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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Scientific reports, 2018-10, Vol.8 (1), p.15557-13, Article 15557

2018

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Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

Journal of applied physics, 2017-05, Vol.121 (20)

2017

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Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

Optica, 2017-02, Vol.4 (2), p.185

2017

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SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters

Small (Weinheim an der Bergstrasse, Germany), 2017-04, Vol.13 (16), p.np-n/a

2017

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GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

ACS photonics, 2018-11, Vol.5 (11), p.4628-4636

2018

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Epitaxial GeSn: impact of process conditions on material quality

Semiconductor science and technology, 2018-10, Vol.33 (11), p.114010

2018

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Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Advanced science, 2018-06, Vol.5 (6), p.1700955-n/a

2018

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Structural Property Study for GeSn Thin Films

Materials, 2020-08, Vol.13 (16), p.3645

2020

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Extreme IR absorption in group IV-SiGeSn core-shell nanowires

Journal of applied physics, 2018-06, Vol.123 (22)

2018

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Formation and optoelectronic property of strain-relaxed Ge1−x−y Si x Sn y /Ge1−x Sn x /Ge1−x−y Si x Sn y double heterostructures on a boron-ion-implanted Ge(001) substrate

Japanese Journal of Applied Physics, 2019-08, Vol.58, p.SIIB23

2019

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Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry

ACS applied energy materials, 2021-07, Vol.4 (7), p.7385-7392

2021

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High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

ACS applied materials & interfaces, 2015-01, Vol.7 (1), p.62-67

2015

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Optical critical points of SixGe1−x−ySny alloys with high Si content

Semiconductor science and technology, 2017-12, Vol.32 (12)

2017

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Thermally activated diffusion and lattice relaxation in (Si)GeSn materials

Physical review materials, 2020-03, Vol.4 (3), Article 033604

2020

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Vapor transport growth of MoS2 nucleated on SiO2 patterns and graphene flakes

Nano research, 2016-11, Vol.9 (11), p.3504-3514

2016

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A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.1070-1076

2018

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Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC

physica status solidi (b), 2023-01, Vol.260 (1), p.n/a

2023

Volltextzugriff (PDF)

Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 μm

IEEE journal of selected topics in quantum electronics, 2024-08, p.1-9

2024

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Dislocation-Based Si-Nanodevices

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DJ02-04DJ02-5

2010

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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Impact of tensile strain on low Sn content GeSn lasing

Tailoring Mechanically Tunable Strain Fields in Graphene

Compositional dependence of the band-gap of Ge1−x−ySixSny alloys

Optically Pumped GeSn Microdisk Lasers on Si

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters

GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

Epitaxial GeSn: impact of process conditions on material quality

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Structural Property Study for GeSn Thin Films

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

Formation and optoelectronic property of strain-relaxed Ge1−x−y Si x Sn y /Ge1−x Sn x /Ge1−x−y Si x Sn y double heterostructures on a boron-ion-implanted Ge(001) substrate

Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry

High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

Optical critical points of SixGe1−x−ySny alloys with high Si content

Thermally activated diffusion and lattice relaxation in (Si)GeSn materials

Vapor transport growth of MoS2 nucleated on SiO2 patterns and graphene flakes

A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC

Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 μm

Dislocation-Based Si-Nanodevices

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