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Dislocation filtering in SiGe and InGaAs buffer layers grown by selective lateral overgrowth method

Applied physics letters, 1995-03, Vol.66 (10), p.1237-1239

Bryskiewicz, T.

1995

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In quest of unrestricted growth of bulk crystals by liquid phase electroepitaxy

Journal of crystal growth, 1995, Vol.153 (1), p.19-24

Bryskiewicz, T.

1995

Volltextzugriff (PDF)

Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001-07, Vol.19 (4), p.1752-1757

2001

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Metalorganic vapor phase diffusion using DMZn Part II: Determination of the interstitial zinc charge state from secondary ion mass spectroscopy measurements using the Boltzmann–Matano technique

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004-05, Vol.22 (3), p.916-920

2004

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Growth of alloy substrates by liquid phase electroepitaxy; Theoretical considerations

Journal of crystal growth, 1993-04, Vol.129 (3-4), p.429-442

1993

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Properties of very uniform InxGa1-xAs single crystals grown by liquid-phase electroepitaxy

Journal of applied physics, 1990-09, Vol.68 (6), p.3018-3020

1990

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Dopant segregation in electroepitaxy: variation of effective distribution coefficient

Journal of applied physics, 1985-01, Vol.57 (8), p.2783-2787

BRYSKIEWICZ, T

1985

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Cellular structure in LEC ternary Ga1 − xInxAs crystals

Journal of crystal growth, 1997-04, Vol.174 (1-4), p.250-255

1997

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Peltier-induced growth kinetics of liquid phase epitaxial GaAs

Journal of crystal growth, 1978-01, Vol.43 (5), p.567-571

Bryskiewicz, T.

1978

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Liquid phase electroepitaxy of semiconductor compounds

Progress in crystal growth and characterization, 1986, Vol.12 (1), p.29-43

Bryskiewicz, T.

1986

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In quest of unrestricted growth of bulk crystal by liquid phase electroepitaxy

Journal of crystal growth, 1995, Vol.153 (1-2), p.19-24

BRYSKIEWICZ, T

1995

Volltextzugriff (PDF)

Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxy

Journal of applied physics, 1987, Vol.61 (1), p.359-364

1987

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Bulk GaAs crystal growth by liquid phase electroepitaxy

Journal of crystal growth, 1987-03, Vol.82 (3), p.279-288

1987

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Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP

Journal of applied physics, 1989-05, Vol.65 (9), p.3459-3469

1989

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Metalorganic vapor phase diffusion using dimethylzinc. Part I: Analysis of the reproducibility of the resulting diffusion profile as measured by secondary ion mass spectrometry

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004-05, Vol.22 (3), p.912-915

2004

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Structural Defects in Thick Ingaas Layers Grown by Lpee on Partially Masked GaAs Substrates

MRS proceedings, 1996, Vol.448, Article 231

BRYSKIEWICZ, T.

1996

Volltextzugriff (PDF)

Growth and characterization of high quality LPEE GaAs bulk crystals

Journal of crystal growth, 1987-11, Vol.85 (1), p.136-141

1987

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Electroepitaxy of multicomponent systems: ternary and quarternary compounds

Journal of applied physics, 1980-02, Vol.51 (2), p.988-996

1980

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Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates

Journal of crystal growth, 1991-09, Vol.113 (3), p.379-384

1991

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New semi-insulating InP: titanium midgap donors

Applied physics letters, 1986-04, Vol.48 (17), p.1162-1164

1986

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Internal strain and dislocations in Ga1−xAs crystals grown by liquid phase epitaxy/electroepitaxy

Journal of electronic materials, 1995-03, Vol.24 (3), p.203-209

1995

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Internal strain and dislocations in InxGa1-xAs crystals grown by liquid phase epitaxy/electroepitaxy

Journal of electronic materials, 1995-03, Vol.24 (3), p.203-209

1995

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Transmission electron microscopy characterization of In x Ga1− x As substrates grown by heteroepitaxial lateral overgrowth

Applied physics letters, 1994-05, Vol.64 (18), p.2344-2346

1994

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Investigation of the mechanism and kinetics of growth of LPE GaAs

Journal of crystal growth, 1978, Vol.43 (1), p.101-114

Bryskiewicz, T

1978

Volltextzugriff (PDF)

Cellular structure in LEC ternary Ga 1 − xIn xAs crystals

Journal of crystal growth, 1997, Vol.174 (1), p.250-255

1997

Volltextzugriff (PDF)

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Dislocation filtering in SiGe and InGaAs buffer layers grown by selective lateral overgrowth method

In quest of unrestricted growth of bulk crystals by liquid phase electroepitaxy

Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure

Metalorganic vapor phase diffusion using DMZn Part II: Determination of the interstitial zinc charge state from secondary ion mass spectroscopy measurements using the Boltzmann–Matano technique

Growth of alloy substrates by liquid phase electroepitaxy; Theoretical considerations

Properties of very uniform InxGa1-xAs single crystals grown by liquid-phase electroepitaxy

Dopant segregation in electroepitaxy: variation of effective distribution coefficient

Cellular structure in LEC ternary Ga1 − xInxAs crystals

Peltier-induced growth kinetics of liquid phase epitaxial GaAs

Liquid phase electroepitaxy of semiconductor compounds

In quest of unrestricted growth of bulk crystal by liquid phase electroepitaxy

Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxy

Bulk GaAs crystal growth by liquid phase electroepitaxy

Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP

Metalorganic vapor phase diffusion using dimethylzinc. Part I: Analysis of the reproducibility of the resulting diffusion profile as measured by secondary ion mass spectrometry

Structural Defects in Thick Ingaas Layers Grown by Lpee on Partially Masked GaAs Substrates

Growth and characterization of high quality LPEE GaAs bulk crystals

Electroepitaxy of multicomponent systems: ternary and quarternary compounds

Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates

New semi-insulating InP: titanium midgap donors

Internal strain and dislocations in Ga1−xAs crystals grown by liquid phase epitaxy/electroepitaxy

Internal strain and dislocations in InxGa1-xAs crystals grown by liquid phase epitaxy/electroepitaxy

Transmission electron microscopy characterization of In x Ga1− x As substrates grown by heteroepitaxial lateral overgrowth

Investigation of the mechanism and kinetics of growth of LPE GaAs

Cellular structure in LEC ternary Ga 1 − xIn xAs crystals

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