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Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

Applied physics letters, 1998-02, Vol.72 (8), p.942-944

1998

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Properties of the intermediately bound α, β- and γ-excitons in ZnO:Cu

Journal of physics. Condensed matter, 1998-03, Vol.10 (9), p.2007-2019

1998

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Mechanisms of optical gain in cubic gallium nitrite

Applied physics letters, 1998-03, Vol.72 (12), p.1439-1441

1998

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A Quantitative Analysis of Two-Colour Pump and Probe Spectra from Bound Excitons in Compensated II-VI Semiconductors

Physica status solidi. B. Basic research, 2002-01, Vol.229 (2), p.617-620

2002

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Erbium luminescence in doped amorphous silicon

Applied physics letters, 1990-01, Vol.56 (5), p.446-447

1990

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Zeeman spectroscopy of the Fe3+ center in GaN

Applied physics letters, 1995-11, Vol.67 (19), p.2822-2824

1995

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The copper centre: a transient shallow acceptor in ZnS and CdS

Journal of physics. Condensed matter, 1992-01, Vol.4 (1), p.157-168

1992

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Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.307-311

1996

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Calorimetric absorption spectroscopy at mK temperatures — an extremely sensitive method to determine nonradiative processes in solids

Journal of crystal growth, 1992-02, Vol.117 (1), p.698-703

1992

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Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN

Journal of luminescence, 2000-05, Vol.87, p.1192-1195

2000

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Nonradiative transition rates of Fe2+ in III-V and II-VI semiconductors

Journal of luminescence, 1994, Vol.58 (1-6), p.252-256

1994

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Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

physica status solidi (b), 1999-11, Vol.216 (1), p.471-476

1999

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Calorimetric absorption spectroscopy of copper centers in II–VI semiconductors at mK temperatures

Journal of luminescence, 1994-04, Vol.60-61, p.588-591

1994

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Local vibrational modes of the CuO4-cluster in ZnO

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.889-892

1996

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Acceptor bound biexcitons in ZnSe and CdS

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.776-779

1996

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Optical nonlinearity and fast switching due to birefringence and mode coupling in CdS crystals

Journal of crystal growth, 1992-02, Vol.117 (1), p.788-792

1992

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Degenerate four-wave mixing at bound excitons in II–VI semiconductors

Journal of crystal growth, 1994-04, Vol.138 (1), p.809-814

1994

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Identification of the 1.19-eV luminescence in hexagonal GaN

Physical review. B, Condensed matter, 1995-12, Vol.52 (23), p.16508-16515

1995

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Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition

Journal of crystal growth, 1994-04, Vol.138 (1), p.75-80

1994

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Optical and electrical properties of heavily indium-doped CdS around the semiconductor-metal phase transition

Journal of crystal growth, 1990-04, Vol.101 (1), p.497-501

1990

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Picosecond recombination dynamics at Ni-centres in ZnS and CdS

Journal of luminescence, 1992-07, Vol.53 (1-6), p.359-362

1992

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Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy

Journal of crystal growth, 1994-04, Vol.138 (1), p.379-384

1994

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Raman Scattering from Defects in GaN

Materials science forum, 1997-01, Vol.258-263, p.1197-1202

1997

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Energy transfer processes via the interface of ZnSe/GaAs epilayers

Journal of crystal growth, 1994-04, Vol.138 (1), p.820-825

1994

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Spontaneous photon echo from the (A 0, X) complex in CdS

Journal of luminescence, 1994, Vol.58 (1), p.237-240

1994

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Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

Properties of the intermediately bound α, β- and γ-excitons in ZnO:Cu

Mechanisms of optical gain in cubic gallium nitrite

A Quantitative Analysis of Two-Colour Pump and Probe Spectra from Bound Excitons in Compensated II-VI Semiconductors

Erbium luminescence in doped amorphous silicon

Zeeman spectroscopy of the Fe3+ center in GaN

The copper centre: a transient shallow acceptor in ZnS and CdS

Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

Calorimetric absorption spectroscopy at mK temperatures — an extremely sensitive method to determine nonradiative processes in solids

Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN

Nonradiative transition rates of Fe2+ in III-V and II-VI semiconductors

Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

Calorimetric absorption spectroscopy of copper centers in II–VI semiconductors at mK temperatures

Local vibrational modes of the CuO4-cluster in ZnO

Acceptor bound biexcitons in ZnSe and CdS

Optical nonlinearity and fast switching due to birefringence and mode coupling in CdS crystals

Degenerate four-wave mixing at bound excitons in II–VI semiconductors

Identification of the 1.19-eV luminescence in hexagonal GaN

Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition

Optical and electrical properties of heavily indium-doped CdS around the semiconductor-metal phase transition

Picosecond recombination dynamics at Ni-centres in ZnS and CdS

Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy

Raman Scattering from Defects in GaN

Energy transfer processes via the interface of ZnSe/GaAs epilayers

Spontaneous photon echo from the (A 0, X) complex in CdS

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