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Growth and characterisation of semi-polar ( 1 l 2 ¯ 2 ) InGaN/GaN MQW structures

Journal of crystal growth, 2007-03, Vol.300 (1), p.155-159

2007

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Observation of a novel form of ordering in Al 0.5In 0.5As and (Ga,Al) 0.5In 0.5As

Journal of crystal growth, 1993, Vol.131 (3), p.419-425

1993

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Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

Journal of crystal growth, 1993-04, Vol.129 (3-4), p.779-782

1993

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The characterisation of the ordering of movpe grown III–V alloys using transmission electron microscopy

Surface science, 1990-04, Vol.228 (1), p.102-107

1990

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Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy

Journal of crystal growth, 1993-02, Vol.127 (1), p.165-168

1993

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Observation of a novel form of ordering in Al0.5In0.5As and (Ga,Al)0.5In0.5As

Journal of crystal growth, 1993-08, Vol.131 (3-4), p.419-425

1993

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Some temperature-dependent properties of niobium tunnel junctions

Journal of applied physics, 1976-12, Vol.47 (12), p.5432-5439

Broom, R. F.

1976

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Niobium oxide-barrier tunnel junction

IEEE transactions on electron devices, 1980-10, Vol.27 (10), p.1998-2008

1980

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Josephson junctions of small area formed on the edges of niobium films

Applied physics letters, 1980-07, Vol.37 (2), p.237-239

1980

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Doping dependence of the barrier height of palladium-silicide Schottky-diodes

Solid-state electronics, 1971-01, Vol.14 (11), p.1087-1092

Broom, R.F.

1971

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Observation of superconductivity in an indium-silicon bistable device

Applied physics letters, 1972-01, Vol.21 (11), p.551-553

Broom, Ronald F.

1972

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Self modulation at gigahertz frequencies of a diode laser coupled to an external cavity

Electronics letters, 1969-01, Vol.5 (23), p.571

Broom, R.F.

1969

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Model for a 15 ns 16K RAM with Josephson junctions

IEEE journal of solid-state circuits, 1979-08, Vol.14 (4), p.690-699

1979

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The diffusion of indium in lead films containing gold

Thin solid films, 1977-01, Vol.47 (3), p.249-259

1977

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Q factor and resonance amplitude of Josephson tunnel junctions

Physical review. B, Solid state, 1977-10, Vol.16 (7), p.3100-3107

1977

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Room temperature operation of gallium arsenide lasers

Physics letters, 1963-01, Vol.4 (6), p.330-331

Broom, R.F.

1963

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The gallium arsenide optical maser; efficiency measurements at 77°K, room temperature operation and experiments with external mirrors

IEEE transactions on electron devices, 1963-09, Vol.10 (5), p.334-334

1963

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Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1988-03, Vol.6 (2), p.692-695

1988

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A memory-cell array with normally off-type Schottky-Barrier FET's

IEEE journal of solid-state circuits, 1972-08, Vol.7 (4), p.277-282

1972

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A new type of bistable element involving thermal propagation of a normal region in a thin superconducting film

Solid-state electronics, 1960-01, Vol.1 (4), p.314-318

1960

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Operation of a gallium arsenide diode laser with an external resonator using a brewster window

Physics letters. A, 1967-01, Vol.24 (11), p.561-562

1967

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Studies on arrays of Josephson tunnel junction interferometers

Journal of vacuum science & technology, 1978-05, Vol.15 (3), p.1166-1174

1978

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Time Delays in the Superconducting Transition of Lead Films

Physical review, 1959-01, Vol.116 (2), p.344-345

1959

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Effects on sheep welfare of a 1 h rest during a two stage journey

Proceedings of the British Society of Animal Science, 1998, Vol.1998, p.107-107

1998

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Effects on sheep welfare of a 1 h rest during a two stage journey

Proceedings of the British Society of Animal Science, 1998, Vol.1998, p.107-107

1998

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Growth and characterisation of semi-polar ( 1 l 2 ¯ 2 ) InGaN/GaN MQW structures

Observation of a novel form of ordering in Al 0.5In 0.5As and (Ga,Al) 0.5In 0.5As

Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

The characterisation of the ordering of movpe grown III–V alloys using transmission electron microscopy

Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy

Observation of a novel form of ordering in Al0.5In0.5As and (Ga,Al)0.5In0.5As

Some temperature-dependent properties of niobium tunnel junctions

Niobium oxide-barrier tunnel junction

Josephson junctions of small area formed on the edges of niobium films

Doping dependence of the barrier height of palladium-silicide Schottky-diodes

Observation of superconductivity in an indium-silicon bistable device

Self modulation at gigahertz frequencies of a diode laser coupled to an external cavity

Model for a 15 ns 16K RAM with Josephson junctions

The diffusion of indium in lead films containing gold

Q factor and resonance amplitude of Josephson tunnel junctions

Room temperature operation of gallium arsenide lasers

The gallium arsenide optical maser; efficiency measurements at 77°K, room temperature operation and experiments with external mirrors

Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers

A memory-cell array with normally off-type Schottky-Barrier FET's

A new type of bistable element involving thermal propagation of a normal region in a thin superconducting film

Operation of a gallium arsenide diode laser with an external resonator using a brewster window

Studies on arrays of Josephson tunnel junction interferometers

Time Delays in the Superconducting Transition of Lead Films

Effects on sheep welfare of a 1 h rest during a two stage journey

Effects on sheep welfare of a 1 h rest during a two stage journey

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